The dependence of heavy-ion-induced adhesion on energy loss and time
Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Stokstad, R. G. [verfasserIn] Jacobs, P. M. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1986 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials research - Berlin : Springer, 1986, 1(1986), 2 vom: März, Seite 231-233 |
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| Übergeordnetes Werk: |
volume:1 ; year:1986 ; number:2 ; month:03 ; pages:231-233 |
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10.1557/JMR.1986.0231 |
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| 520 | |a Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. | ||
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10.1557/JMR.1986.0231 doi (DE-627)SPR041302214 (SPR)JMR.1986.0231-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Stokstad, R. G. verfasserin aut The dependence of heavy-ion-induced adhesion on energy loss and time 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. Jacobs, P. M. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 1(1986), 2 vom: März, Seite 231-233 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:1 year:1986 number:2 month:03 pages:231-233 https://dx.doi.org/10.1557/JMR.1986.0231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 1 1986 2 03 231-233 |
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10.1557/JMR.1986.0231 doi (DE-627)SPR041302214 (SPR)JMR.1986.0231-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Stokstad, R. G. verfasserin aut The dependence of heavy-ion-induced adhesion on energy loss and time 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. Jacobs, P. M. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 1(1986), 2 vom: März, Seite 231-233 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:1 year:1986 number:2 month:03 pages:231-233 https://dx.doi.org/10.1557/JMR.1986.0231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 1 1986 2 03 231-233 |
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10.1557/JMR.1986.0231 doi (DE-627)SPR041302214 (SPR)JMR.1986.0231-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Stokstad, R. G. verfasserin aut The dependence of heavy-ion-induced adhesion on energy loss and time 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. Jacobs, P. M. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 1(1986), 2 vom: März, Seite 231-233 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:1 year:1986 number:2 month:03 pages:231-233 https://dx.doi.org/10.1557/JMR.1986.0231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 1 1986 2 03 231-233 |
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10.1557/JMR.1986.0231 doi (DE-627)SPR041302214 (SPR)JMR.1986.0231-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Stokstad, R. G. verfasserin aut The dependence of heavy-ion-induced adhesion on energy loss and time 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. Jacobs, P. M. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 1(1986), 2 vom: März, Seite 231-233 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:1 year:1986 number:2 month:03 pages:231-233 https://dx.doi.org/10.1557/JMR.1986.0231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 1 1986 2 03 231-233 |
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10.1557/JMR.1986.0231 doi (DE-627)SPR041302214 (SPR)JMR.1986.0231-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Stokstad, R. G. verfasserin aut The dependence of heavy-ion-induced adhesion on energy loss and time 1986 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. Jacobs, P. M. verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 1(1986), 2 vom: März, Seite 231-233 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:1 year:1986 number:2 month:03 pages:231-233 https://dx.doi.org/10.1557/JMR.1986.0231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 1 1986 2 03 231-233 |
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Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. |
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Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. |
| abstract_unstemmed |
Abstract The ability of heavy-ion beams to enhance the adhesion of thin metallic films to substrates has been studied as a function of projectile species. Measurements of the adhesion enhancement of a thin gold film to substrates of tantalum and silicon (with native oxides) have been made for beams of 12C, 16O, 28Si, 35Cl, and 58Ni at 2.85 MeV/nucleon. The threshold dose required to pass the Scotch tape peel test was found for the Au-Ta system to be D th ($ cm^{−2} $) = $ 10^{17} $ (dE / dx)−3±0.2 where dE/dx is the electronic stopping power (MeV $ mg^{−1} $ $ cm^{−2} $) of the ion in Au. For the Au-Si system, Dth = 6×$ 10^{18} $ (dE/dx)−4.1±0.3. The steep dependence of D th on dE/dx found here is in contrast with an earlier measurement for the Au-Ta system by Tombrello et al. The adhesion enhancement was observed to decrease with time after the bombardment in a manner suggesting that diffusion of atoms through the gold film is important. The possible importance of small concentrations of extraneous atoms at the interface is discussed. |
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| title_short |
The dependence of heavy-ion-induced adhesion on energy loss and time |
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