Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS)
Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting l...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sayyad, Pasha W. [verfasserIn] Khan, Shahebaz S. [verfasserIn] Ingle, Nikesh N. [verfasserIn] Bodkhe, Gajanan A. [verfasserIn] Al-Gahouari, Theeazen [verfasserIn] Mahadik, Manasi M. [verfasserIn] Shirsat, Sumedh M. [verfasserIn] Shirsat, Mahendra D. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 126(2020), 11 vom: 13. Okt. |
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| Übergeordnetes Werk: |
volume:126 ; year:2020 ; number:11 ; day:13 ; month:10 |
| Links: |
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| DOI / URN: |
10.1007/s00339-020-04053-9 |
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| Katalog-ID: |
SPR041325567 |
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| 245 | 1 | 0 | |a Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
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| 520 | |a Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. | ||
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| 650 | 4 | |a Graphene oxide (GO) |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Gas sensing |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a SO |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a gas |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Sensing mechanism |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Khan, Shahebaz S. |e verfasserin |4 aut | |
| 700 | 1 | |a Ingle, Nikesh N. |e verfasserin |4 aut | |
| 700 | 1 | |a Bodkhe, Gajanan A. |e verfasserin |4 aut | |
| 700 | 1 | |a Al-Gahouari, Theeazen |e verfasserin |4 aut | |
| 700 | 1 | |a Mahadik, Manasi M. |e verfasserin |4 aut | |
| 700 | 1 | |a Shirsat, Sumedh M. |e verfasserin |4 aut | |
| 700 | 1 | |a Shirsat, Mahendra D. |e verfasserin |4 aut | |
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10.1007/s00339-020-04053-9 doi (DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 Khan, Shahebaz S. verfasserin aut Ingle, Nikesh N. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 126(2020), 11 vom: 13. Okt. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:126 year:2020 number:11 day:13 month:10 https://dx.doi.org/10.1007/s00339-020-04053-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 126 2020 11 13 10 |
| spelling |
10.1007/s00339-020-04053-9 doi (DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 Khan, Shahebaz S. verfasserin aut Ingle, Nikesh N. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 126(2020), 11 vom: 13. Okt. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:126 year:2020 number:11 day:13 month:10 https://dx.doi.org/10.1007/s00339-020-04053-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 126 2020 11 13 10 |
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10.1007/s00339-020-04053-9 doi (DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 Khan, Shahebaz S. verfasserin aut Ingle, Nikesh N. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 126(2020), 11 vom: 13. Okt. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:126 year:2020 number:11 day:13 month:10 https://dx.doi.org/10.1007/s00339-020-04053-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 126 2020 11 13 10 |
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10.1007/s00339-020-04053-9 doi (DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 Khan, Shahebaz S. verfasserin aut Ingle, Nikesh N. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 126(2020), 11 vom: 13. Okt. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:126 year:2020 number:11 day:13 month:10 https://dx.doi.org/10.1007/s00339-020-04053-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 126 2020 11 13 10 |
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10.1007/s00339-020-04053-9 doi (DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Sayyad, Pasha W. verfasserin aut Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 Khan, Shahebaz S. verfasserin aut Ingle, Nikesh N. verfasserin aut Bodkhe, Gajanan A. verfasserin aut Al-Gahouari, Theeazen verfasserin aut Mahadik, Manasi M. verfasserin aut Shirsat, Sumedh M. verfasserin aut Shirsat, Mahendra D. verfasserin aut Enthalten in Applied physics Berlin : Springer, 1973 126(2020), 11 vom: 13. Okt. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:126 year:2020 number:11 day:13 month:10 https://dx.doi.org/10.1007/s00339-020-04053-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE 51.00 ASE 53.09 ASE AR 126 2020 11 13 10 |
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English |
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Enthalten in Applied physics 126(2020), 11 vom: 13. Okt. volume:126 year:2020 number:11 day:13 month:10 |
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Enthalten in Applied physics 126(2020), 11 vom: 13. Okt. volume:126 year:2020 number:11 day:13 month:10 |
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PEDOT:PSS Graphene oxide (GO) Gas sensing SO gas Sensing mechanism |
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Sayyad, Pasha W. @@aut@@ Khan, Shahebaz S. @@aut@@ Ingle, Nikesh N. @@aut@@ Bodkhe, Gajanan A. @@aut@@ Al-Gahouari, Theeazen @@aut@@ Mahadik, Manasi M. @@aut@@ Shirsat, Sumedh M. @@aut@@ Shirsat, Mahendra D. @@aut@@ |
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The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. 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Sayyad, Pasha W. |
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Sayyad, Pasha W. ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PEDOT:PSS misc Graphene oxide (GO) misc Gas sensing misc SO misc gas misc Sensing mechanism Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
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530 ASE 33.60 bkl 51.00 bkl 53.09 bkl Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) PEDOT:PSS (dpeaa)DE-He213 Graphene oxide (GO) (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 SO (dpeaa)DE-He213 gas (dpeaa)DE-He213 Sensing mechanism (dpeaa)DE-He213 |
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ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PEDOT:PSS misc Graphene oxide (GO) misc Gas sensing misc SO misc gas misc Sensing mechanism |
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ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PEDOT:PSS misc Graphene oxide (GO) misc Gas sensing misc SO misc gas misc Sensing mechanism |
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ddc 530 bkl 33.60 bkl 51.00 bkl 53.09 misc PEDOT:PSS misc Graphene oxide (GO) misc Gas sensing misc SO misc gas misc Sensing mechanism |
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Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
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(DE-627)SPR041325567 (DE-599)SPRs00339-020-04053-9-e (SPR)s00339-020-04053-9-e |
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Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
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Sayyad, Pasha W. |
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Applied physics |
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Applied physics |
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eng |
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500 - Science |
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2020 |
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Sayyad, Pasha W. Khan, Shahebaz S. Ingle, Nikesh N. Bodkhe, Gajanan A. Al-Gahouari, Theeazen Mahadik, Manasi M. Shirsat, Sumedh M. Shirsat, Mahendra D. |
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Sayyad, Pasha W. |
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10.1007/s00339-020-04053-9 |
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530 |
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verfasserin |
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chemiresistive $ so_{2} $ sensor: graphene oxide (go) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (pedot:pss) |
| title_auth |
Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
| abstract |
Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. |
| abstractGer |
Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. |
| abstract_unstemmed |
Abstract This report deals with the synthesis of poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate)/graphene oxide (PEDOT:PSS/GO) composites by solution processing method and exploration of the same for chemiresistive-type $ SO_{2} $ gas sensing. The PEDOT:PSS polymer is used as a conducting layer due to high stability in air and GO due to the high surface-to-volume ratio. The PEDOT:PSS/GO was characterized by using an X-ray diffractometer, atomic force microscopy (AFM), and Raman spectroscopy. The sensor channel was fabricated by drop-casting PEDOT:PSS/GO on the sub-mm gap of copper a electrode on plastic substrate, which forms two-electrode devices as a sensor. The PEDOT:PSS/GO sensor platform manifests highly selective, sensitive, rapid, and reversible responses for the detection of 0.5–40 ppm $ SO_{2} $ gas. Moreover, it exhibits fast response and recovery time (81 s and 92 s), with excellent selectivity and stability at room temperature. |
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11 |
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Chemiresistive $ SO_{2} $ sensor: graphene oxide (GO) anchored poly(3,4-ethylenedioxythiophene):poly(4styrenesulfonate) (PEDOT:PSS) |
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https://dx.doi.org/10.1007/s00339-020-04053-9 |
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Khan, Shahebaz S. Ingle, Nikesh N. Bodkhe, Gajanan A. Al-Gahouari, Theeazen Mahadik, Manasi M. Shirsat, Sumedh M. Shirsat, Mahendra D. |
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Khan, Shahebaz S. Ingle, Nikesh N. Bodkhe, Gajanan A. Al-Gahouari, Theeazen Mahadik, Manasi M. Shirsat, Sumedh M. Shirsat, Mahendra D. |
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| score |
7.3992968 |