MOVPE Growth of MCT for LWIR Detectors
Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Irvine, S.J.C. [verfasserIn] Bajaj, J. [verfasserIn] Bubulac, L.O. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 299(1994), 1 vom: 01. Dez., Seite 99-108 |
|---|---|
| Übergeordnetes Werk: |
volume:299 ; year:1994 ; number:1 ; day:01 ; month:12 ; pages:99-108 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-299-99 |
|---|
| Katalog-ID: |
SPR041343433 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041343433 | ||
| 003 | DE-627 | ||
| 005 | 20220112052021.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1994 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-299-99 |2 doi | |
| 035 | |a (DE-627)SPR041343433 | ||
| 035 | |a (SPR)PROC-299-99-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Irvine, S.J.C. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a MOVPE Growth of MCT for LWIR Detectors |
| 264 | 1 | |c 1994 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. | ||
| 700 | 1 | |a Bajaj, J. |e verfasserin |4 aut | |
| 700 | 1 | |a Bubulac, L.O. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 299(1994), 1 vom: 01. Dez., Seite 99-108 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:299 |g year:1994 |g number:1 |g day:01 |g month:12 |g pages:99-108 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-299-99 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 299 |j 1994 |e 1 |b 01 |c 12 |h 99-108 | ||
| author_variant |
s i si j b jb l b lb |
|---|---|
| matchkey_str |
article:19464274:1994----::opgotomtolid |
| hierarchy_sort_str |
1994 |
| publishDate |
1994 |
| allfields |
10.1557/PROC-299-99 doi (DE-627)SPR041343433 (SPR)PROC-299-99-e DE-627 ger DE-627 rakwb eng 670 ASE Irvine, S.J.C. verfasserin aut MOVPE Growth of MCT for LWIR Detectors 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. Bajaj, J. verfasserin aut Bubulac, L.O. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 299(1994), 1 vom: 01. Dez., Seite 99-108 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:299 year:1994 number:1 day:01 month:12 pages:99-108 https://dx.doi.org/10.1557/PROC-299-99 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 299 1994 1 01 12 99-108 |
| spelling |
10.1557/PROC-299-99 doi (DE-627)SPR041343433 (SPR)PROC-299-99-e DE-627 ger DE-627 rakwb eng 670 ASE Irvine, S.J.C. verfasserin aut MOVPE Growth of MCT for LWIR Detectors 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. Bajaj, J. verfasserin aut Bubulac, L.O. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 299(1994), 1 vom: 01. Dez., Seite 99-108 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:299 year:1994 number:1 day:01 month:12 pages:99-108 https://dx.doi.org/10.1557/PROC-299-99 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 299 1994 1 01 12 99-108 |
| allfields_unstemmed |
10.1557/PROC-299-99 doi (DE-627)SPR041343433 (SPR)PROC-299-99-e DE-627 ger DE-627 rakwb eng 670 ASE Irvine, S.J.C. verfasserin aut MOVPE Growth of MCT for LWIR Detectors 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. Bajaj, J. verfasserin aut Bubulac, L.O. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 299(1994), 1 vom: 01. Dez., Seite 99-108 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:299 year:1994 number:1 day:01 month:12 pages:99-108 https://dx.doi.org/10.1557/PROC-299-99 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 299 1994 1 01 12 99-108 |
| allfieldsGer |
10.1557/PROC-299-99 doi (DE-627)SPR041343433 (SPR)PROC-299-99-e DE-627 ger DE-627 rakwb eng 670 ASE Irvine, S.J.C. verfasserin aut MOVPE Growth of MCT for LWIR Detectors 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. Bajaj, J. verfasserin aut Bubulac, L.O. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 299(1994), 1 vom: 01. Dez., Seite 99-108 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:299 year:1994 number:1 day:01 month:12 pages:99-108 https://dx.doi.org/10.1557/PROC-299-99 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 299 1994 1 01 12 99-108 |
| allfieldsSound |
10.1557/PROC-299-99 doi (DE-627)SPR041343433 (SPR)PROC-299-99-e DE-627 ger DE-627 rakwb eng 670 ASE Irvine, S.J.C. verfasserin aut MOVPE Growth of MCT for LWIR Detectors 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. Bajaj, J. verfasserin aut Bubulac, L.O. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 299(1994), 1 vom: 01. Dez., Seite 99-108 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:299 year:1994 number:1 day:01 month:12 pages:99-108 https://dx.doi.org/10.1557/PROC-299-99 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 299 1994 1 01 12 99-108 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 299(1994), 1 vom: 01. Dez., Seite 99-108 volume:299 year:1994 number:1 day:01 month:12 pages:99-108 |
| sourceStr |
Enthalten in MRS online proceedings library 299(1994), 1 vom: 01. Dez., Seite 99-108 volume:299 year:1994 number:1 day:01 month:12 pages:99-108 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Irvine, S.J.C. @@aut@@ Bajaj, J. @@aut@@ Bubulac, L.O. @@aut@@ |
| publishDateDaySort_date |
1994-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041343433 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041343433</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052021.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-299-99</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041343433</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-299-99-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Irvine, S.J.C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOVPE Growth of MCT for LWIR Detectors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bajaj, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L.O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">299(1994), 1 vom: 01. Dez., Seite 99-108</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:299</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:99-108</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-299-99</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">299</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">99-108</subfield></datafield></record></collection>
|
| author |
Irvine, S.J.C. |
| spellingShingle |
Irvine, S.J.C. ddc 670 MOVPE Growth of MCT for LWIR Detectors |
| authorStr |
Irvine, S.J.C. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE MOVPE Growth of MCT for LWIR Detectors |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
MOVPE Growth of MCT for LWIR Detectors |
| ctrlnum |
(DE-627)SPR041343433 (SPR)PROC-299-99-e |
| title_full |
MOVPE Growth of MCT for LWIR Detectors |
| author_sort |
Irvine, S.J.C. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1994 |
| contenttype_str_mv |
txt |
| container_start_page |
99 |
| author_browse |
Irvine, S.J.C. Bajaj, J. Bubulac, L.O. |
| container_volume |
299 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Irvine, S.J.C. |
| doi_str_mv |
10.1557/PROC-299-99 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
movpe growth of mct for lwir detectors |
| title_auth |
MOVPE Growth of MCT for LWIR Detectors |
| abstract |
Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. |
| abstractGer |
Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. |
| abstract_unstemmed |
Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
MOVPE Growth of MCT for LWIR Detectors |
| url |
https://dx.doi.org/10.1557/PROC-299-99 |
| remote_bool |
true |
| author2 |
Bajaj, J. Bubulac, L.O. |
| author2Str |
Bajaj, J. Bubulac, L.O. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-299-99 |
| up_date |
2024-07-03T21:36:27.586Z |
| _version_ |
1803595376328966144 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041343433</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052021.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-299-99</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041343433</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-299-99-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Irvine, S.J.C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOVPE Growth of MCT for LWIR Detectors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Recent progress in the growth of $ Hg_{1−x} %$ Cd_{x} $Te (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × $ 10^{15} $ $ cm^{−3} $. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring. Laser reflectometry has been used to monitor growth rates and morphology throughout the growth of multiple layer structures. This wafer monitoring has been complemented by system monitoring, using Epison concentration monitors and pyrometry to measure temperature.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bajaj, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L.O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">299(1994), 1 vom: 01. Dez., Seite 99-108</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:299</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:99-108</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-299-99</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">299</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">99-108</subfield></datafield></record></collection>
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7.399928 |