Diamond Membranes for X-ray Lithography Masks
Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Phillips, William [verfasserIn] Moreno, Miguel A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 306(1993), 1 vom: 01. Dez., Seite 111-120 |
|---|---|
| Übergeordnetes Werk: |
volume:306 ; year:1993 ; number:1 ; day:01 ; month:12 ; pages:111-120 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-306-111 |
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SPR041419073 |
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| 520 | |a Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. | ||
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10.1557/PROC-306-111 doi (DE-627)SPR041419073 (SPR)PROC-306-111-e DE-627 ger DE-627 rakwb eng 670 ASE Phillips, William verfasserin aut Diamond Membranes for X-ray Lithography Masks 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. Moreno, Miguel A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 306(1993), 1 vom: 01. Dez., Seite 111-120 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:306 year:1993 number:1 day:01 month:12 pages:111-120 https://dx.doi.org/10.1557/PROC-306-111 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 306 1993 1 01 12 111-120 |
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10.1557/PROC-306-111 doi (DE-627)SPR041419073 (SPR)PROC-306-111-e DE-627 ger DE-627 rakwb eng 670 ASE Phillips, William verfasserin aut Diamond Membranes for X-ray Lithography Masks 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. Moreno, Miguel A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 306(1993), 1 vom: 01. Dez., Seite 111-120 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:306 year:1993 number:1 day:01 month:12 pages:111-120 https://dx.doi.org/10.1557/PROC-306-111 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 306 1993 1 01 12 111-120 |
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10.1557/PROC-306-111 doi (DE-627)SPR041419073 (SPR)PROC-306-111-e DE-627 ger DE-627 rakwb eng 670 ASE Phillips, William verfasserin aut Diamond Membranes for X-ray Lithography Masks 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. Moreno, Miguel A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 306(1993), 1 vom: 01. Dez., Seite 111-120 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:306 year:1993 number:1 day:01 month:12 pages:111-120 https://dx.doi.org/10.1557/PROC-306-111 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 306 1993 1 01 12 111-120 |
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10.1557/PROC-306-111 doi (DE-627)SPR041419073 (SPR)PROC-306-111-e DE-627 ger DE-627 rakwb eng 670 ASE Phillips, William verfasserin aut Diamond Membranes for X-ray Lithography Masks 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. Moreno, Miguel A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 306(1993), 1 vom: 01. Dez., Seite 111-120 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:306 year:1993 number:1 day:01 month:12 pages:111-120 https://dx.doi.org/10.1557/PROC-306-111 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 306 1993 1 01 12 111-120 |
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10.1557/PROC-306-111 doi (DE-627)SPR041419073 (SPR)PROC-306-111-e DE-627 ger DE-627 rakwb eng 670 ASE Phillips, William verfasserin aut Diamond Membranes for X-ray Lithography Masks 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. Moreno, Miguel A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 306(1993), 1 vom: 01. Dez., Seite 111-120 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:306 year:1993 number:1 day:01 month:12 pages:111-120 https://dx.doi.org/10.1557/PROC-306-111 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 306 1993 1 01 12 111-120 |
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Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. |
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Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. |
| abstract_unstemmed |
Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041419073</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051931.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-306-111</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041419073</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-306-111-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Phillips, William</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Diamond Membranes for X-ray Lithography Masks</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Process techniques have been developed to produce diamond membranes for application as x-ray lithography masks.* Residual stress and grain size of the films are influenced by substrate temperature, chamber pressure, and methane concentration, and optimization of these parameters narrows the range of acceptable process conditions. A reactor geometry was chosen which has the capability to produce membranes with thickness uniformity of ± 7 percent across a 50 mm diameter. A cyclic renucleation technique was developed to maintain the grain size at low levels independent of film thickness. Membranes with RMS roughness of about 25 nm, as determined by atomic force microscopy, are fabricated reproducibly. The elastic modulus of small grained membranes deviates from that of larger grained membranes. This deviation must be taken into account in membrane distortion modeling calculations.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Moreno, Miguel A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">306(1993), 1 vom: 01. Dez., Seite 111-120</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:306</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:111-120</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-306-111</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">306</subfield><subfield code="j">1993</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">111-120</subfield></datafield></record></collection>
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