Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As
Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increa...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Pearton, S. J. [verfasserIn] Hobson, W. S. [verfasserIn] Von Neida, A. E. [verfasserIn] Haegel, N. M. [verfasserIn] Jonesf, K. S. [verfasserIn] Morrisft, N. [verfasserIn] Sealytt, B. J. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1989 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 157(1989), 1 vom: Dez., Seite 665-670 |
|---|---|
| Übergeordnetes Werk: |
volume:157 ; year:1989 ; number:1 ; month:12 ; pages:665-670 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-157-665 |
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SPR041496817 |
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| 520 | |a Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. | ||
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| 700 | 1 | |a Haegel, N. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Jonesf, K. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Morrisft, N. |e verfasserin |4 aut | |
| 700 | 1 | |a Sealytt, B. J. |e verfasserin |4 aut | |
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10.1557/PROC-157-665 doi (DE-627)SPR041496817 (SPR)PROC-157-665-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. Hobson, W. S. verfasserin aut Von Neida, A. E. verfasserin aut Haegel, N. M. verfasserin aut Jonesf, K. S. verfasserin aut Morrisft, N. verfasserin aut Sealytt, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 157(1989), 1 vom: Dez., Seite 665-670 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:157 year:1989 number:1 month:12 pages:665-670 https://dx.doi.org/10.1557/PROC-157-665 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 157 1989 1 12 665-670 |
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10.1557/PROC-157-665 doi (DE-627)SPR041496817 (SPR)PROC-157-665-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. Hobson, W. S. verfasserin aut Von Neida, A. E. verfasserin aut Haegel, N. M. verfasserin aut Jonesf, K. S. verfasserin aut Morrisft, N. verfasserin aut Sealytt, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 157(1989), 1 vom: Dez., Seite 665-670 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:157 year:1989 number:1 month:12 pages:665-670 https://dx.doi.org/10.1557/PROC-157-665 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 157 1989 1 12 665-670 |
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10.1557/PROC-157-665 doi (DE-627)SPR041496817 (SPR)PROC-157-665-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. Hobson, W. S. verfasserin aut Von Neida, A. E. verfasserin aut Haegel, N. M. verfasserin aut Jonesf, K. S. verfasserin aut Morrisft, N. verfasserin aut Sealytt, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 157(1989), 1 vom: Dez., Seite 665-670 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:157 year:1989 number:1 month:12 pages:665-670 https://dx.doi.org/10.1557/PROC-157-665 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 157 1989 1 12 665-670 |
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10.1557/PROC-157-665 doi (DE-627)SPR041496817 (SPR)PROC-157-665-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. Hobson, W. S. verfasserin aut Von Neida, A. E. verfasserin aut Haegel, N. M. verfasserin aut Jonesf, K. S. verfasserin aut Morrisft, N. verfasserin aut Sealytt, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 157(1989), 1 vom: Dez., Seite 665-670 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:157 year:1989 number:1 month:12 pages:665-670 https://dx.doi.org/10.1557/PROC-157-665 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 157 1989 1 12 665-670 |
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10.1557/PROC-157-665 doi (DE-627)SPR041496817 (SPR)PROC-157-665-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. Hobson, W. S. verfasserin aut Von Neida, A. E. verfasserin aut Haegel, N. M. verfasserin aut Jonesf, K. S. verfasserin aut Morrisft, N. verfasserin aut Sealytt, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 157(1989), 1 vom: Dez., Seite 665-670 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:157 year:1989 number:1 month:12 pages:665-670 https://dx.doi.org/10.1557/PROC-157-665 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 157 1989 1 12 665-670 |
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ion implant activation and redistribution in $ al_{x} %$ ga_{1–x} $as |
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Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As |
| abstract |
Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. |
| abstractGer |
Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. |
| abstract_unstemmed |
Abstract The electrical activation characteristics of implanted Be, Mg, Si and S in $ Al_{x} %$ Ga_{1–x} $As (x = 0-1) were investigated as a function of ion dose for rapid annealing in the range 600-950°C. The apparent activation energy for electrical activity of these species increases with increasing AlAs mole fraction - for Be, the activation energy is 0.35eV for GaAs and 0.49eV for $ Al_{0} $.54$ Ga_{0.46} $ As. There is no evidence for pairing of Be and O in AlGaAs, in contrast to the situation for GaAs. Self-compensation is the predominant limiting mechanism for Si activation in AlGaAs as determined by the relative photoluminescence intensities of the $ Si_{Ga} $-to-$ Si_{As} $ related transitions. No significant redistribution of implanted Si is observed for any AlAs mole fraction for rapid annealing (5 sec) up to 900°C, whereas S shows motion into the AlGaAs and no tendency to outdiffuse. By contrast, both Be and Mg display loss of the dopant to the surface, and little redistribution toward the bulk. Minimal damage is observed by transmission electron microscopy in as-implanted AlGaAs for Be or Si doses below the amorphization threshold. Upon annealing at the conditions for optimum activation, a high density of small dislocation loops is observed near the end of the ion range. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Ion Implant Activation and Redistribution in $ Al_{x} %$ Ga_{1–x} $As |
| url |
https://dx.doi.org/10.1557/PROC-157-665 |
| remote_bool |
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| author2 |
Hobson, W. S. Von Neida, A. E. Haegel, N. M. Jonesf, K. S. Morrisft, N. Sealytt, B. J. |
| author2Str |
Hobson, W. S. Von Neida, A. E. Haegel, N. M. Jonesf, K. S. Morrisft, N. Sealytt, B. J. |
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57782046X |
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c |
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false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-157-665 |
| up_date |
2024-07-03T22:21:56.602Z |
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| score |
7.4000187 |