Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films
Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Jinshan [verfasserIn] Sinclair, Robert [verfasserIn] Rosenblum, Stephen S. [verfasserIn] Hayashi, Hidetaka [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 357(1994), 1 vom: 01. Dez., Seite 165-170 |
|---|---|
| Übergeordnetes Werk: |
volume:357 ; year:1994 ; number:1 ; day:01 ; month:12 ; pages:165-170 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-357-165 |
|---|
| Katalog-ID: |
SPR041507398 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041507398 | ||
| 003 | DE-627 | ||
| 005 | 20220112052116.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1994 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-357-165 |2 doi | |
| 035 | |a (DE-627)SPR041507398 | ||
| 035 | |a (SPR)PROC-357-165-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Li, Jinshan |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| 264 | 1 | |c 1994 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. | ||
| 700 | 1 | |a Sinclair, Robert |e verfasserin |4 aut | |
| 700 | 1 | |a Rosenblum, Stephen S. |e verfasserin |4 aut | |
| 700 | 1 | |a Hayashi, Hidetaka |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 357(1994), 1 vom: 01. Dez., Seite 165-170 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:357 |g year:1994 |g number:1 |g day:01 |g month:12 |g pages:165-170 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-357-165 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 357 |j 1994 |e 1 |b 01 |c 12 |h 165-170 | ||
| author_variant |
j l jl r s rs s s r ss ssr h h hh |
|---|---|
| matchkey_str |
article:19464274:1994----::nefcratoehneeiailrwhfaimert |
| hierarchy_sort_str |
1994 |
| publishDate |
1994 |
| allfields |
10.1557/PROC-357-165 doi (DE-627)SPR041507398 (SPR)PROC-357-165-e DE-627 ger DE-627 rakwb eng 670 ASE Li, Jinshan verfasserin aut Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. Sinclair, Robert verfasserin aut Rosenblum, Stephen S. verfasserin aut Hayashi, Hidetaka verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 357(1994), 1 vom: 01. Dez., Seite 165-170 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:357 year:1994 number:1 day:01 month:12 pages:165-170 https://dx.doi.org/10.1557/PROC-357-165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 357 1994 1 01 12 165-170 |
| spelling |
10.1557/PROC-357-165 doi (DE-627)SPR041507398 (SPR)PROC-357-165-e DE-627 ger DE-627 rakwb eng 670 ASE Li, Jinshan verfasserin aut Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. Sinclair, Robert verfasserin aut Rosenblum, Stephen S. verfasserin aut Hayashi, Hidetaka verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 357(1994), 1 vom: 01. Dez., Seite 165-170 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:357 year:1994 number:1 day:01 month:12 pages:165-170 https://dx.doi.org/10.1557/PROC-357-165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 357 1994 1 01 12 165-170 |
| allfields_unstemmed |
10.1557/PROC-357-165 doi (DE-627)SPR041507398 (SPR)PROC-357-165-e DE-627 ger DE-627 rakwb eng 670 ASE Li, Jinshan verfasserin aut Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. Sinclair, Robert verfasserin aut Rosenblum, Stephen S. verfasserin aut Hayashi, Hidetaka verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 357(1994), 1 vom: 01. Dez., Seite 165-170 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:357 year:1994 number:1 day:01 month:12 pages:165-170 https://dx.doi.org/10.1557/PROC-357-165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 357 1994 1 01 12 165-170 |
| allfieldsGer |
10.1557/PROC-357-165 doi (DE-627)SPR041507398 (SPR)PROC-357-165-e DE-627 ger DE-627 rakwb eng 670 ASE Li, Jinshan verfasserin aut Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. Sinclair, Robert verfasserin aut Rosenblum, Stephen S. verfasserin aut Hayashi, Hidetaka verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 357(1994), 1 vom: 01. Dez., Seite 165-170 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:357 year:1994 number:1 day:01 month:12 pages:165-170 https://dx.doi.org/10.1557/PROC-357-165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 357 1994 1 01 12 165-170 |
| allfieldsSound |
10.1557/PROC-357-165 doi (DE-627)SPR041507398 (SPR)PROC-357-165-e DE-627 ger DE-627 rakwb eng 670 ASE Li, Jinshan verfasserin aut Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. Sinclair, Robert verfasserin aut Rosenblum, Stephen S. verfasserin aut Hayashi, Hidetaka verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 357(1994), 1 vom: 01. Dez., Seite 165-170 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:357 year:1994 number:1 day:01 month:12 pages:165-170 https://dx.doi.org/10.1557/PROC-357-165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 357 1994 1 01 12 165-170 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 357(1994), 1 vom: 01. Dez., Seite 165-170 volume:357 year:1994 number:1 day:01 month:12 pages:165-170 |
| sourceStr |
Enthalten in MRS online proceedings library 357(1994), 1 vom: 01. Dez., Seite 165-170 volume:357 year:1994 number:1 day:01 month:12 pages:165-170 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Li, Jinshan @@aut@@ Sinclair, Robert @@aut@@ Rosenblum, Stephen S. @@aut@@ Hayashi, Hidetaka @@aut@@ |
| publishDateDaySort_date |
1994-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041507398 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041507398</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052116.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-357-165</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041507398</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-357-165-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Li, Jinshan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sinclair, Robert</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosenblum, Stephen S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hayashi, Hidetaka</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">357(1994), 1 vom: 01. Dez., Seite 165-170</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:357</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:165-170</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-357-165</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">357</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">165-170</subfield></datafield></record></collection>
|
| author |
Li, Jinshan |
| spellingShingle |
Li, Jinshan ddc 670 Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| authorStr |
Li, Jinshan |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| ctrlnum |
(DE-627)SPR041507398 (SPR)PROC-357-165-e |
| title_full |
Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| author_sort |
Li, Jinshan |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1994 |
| contenttype_str_mv |
txt |
| container_start_page |
165 |
| author_browse |
Li, Jinshan Sinclair, Robert Rosenblum, Stephen S. Hayashi, Hidetaka |
| container_volume |
357 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Li, Jinshan |
| doi_str_mv |
10.1557/PROC-357-165 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
interface reaction enhanced epitaxial growth of barium ferrite magnetic thin films |
| title_auth |
Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| abstract |
Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. |
| abstractGer |
Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. |
| abstract_unstemmed |
Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films |
| url |
https://dx.doi.org/10.1557/PROC-357-165 |
| remote_bool |
true |
| author2 |
Sinclair, Robert Rosenblum, Stephen S. Hayashi, Hidetaka |
| author2Str |
Sinclair, Robert Rosenblum, Stephen S. Hayashi, Hidetaka |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-357-165 |
| up_date |
2024-07-03T22:24:14.797Z |
| _version_ |
1803598382810267648 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041507398</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052116.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-357-165</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041507398</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-357-165-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Li, Jinshan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Interface Reaction Enhanced Epitaxial Growth of Barium Ferrite Magnetic Thin Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Using facing target sputtering, crystalline magnetoplumbite-type barium ferrite ($ BaFe_{12} %$ O_{19} $ or BaM) thin films have been prepared in-situ at a substrate temperature of 640°C without postdeposition annealing. BaM thin films grow randomly if they are directly deposited onto Si or thermally oxidized Si substrates. However, deposited onto a sputtered ZnO layer (∼230Å) on Si substrates, BaM thin films show excellent c-axis out-of-plane texture with a 0.2° c-axis dispersion angle, as indicated by X-ray diffraction (XRD) study. Cross section transmission electron microscopy (TEM) reveals that the textured films epitaxially grow on a transition layer, which is formed between BaM and ZnO. No direct epitaxial relation between BaM and ZnO was observed. This transition layer is identified by TEM and XRD as $ ZnFe_{2} %$ O_{4} $, which, from a structure point of view, reduces the lattice mismatch between BaM and ZnO, and also enhances the c-axis out-of-plane epitaxial growth.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sinclair, Robert</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosenblum, Stephen S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hayashi, Hidetaka</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">357(1994), 1 vom: 01. Dez., Seite 165-170</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:357</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:165-170</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-357-165</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">357</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">165-170</subfield></datafield></record></collection>
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