Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask
Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Dhar, N.K [verfasserIn] Boyd, P. [verfasserIn] Martinka, M. [verfasserIn] Benson, J.D. [verfasserIn] Dinan, J.H. [verfasserIn] Iliadis, A.A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 263(1992), 1 vom: 01. Feb., Seite 359-364 |
|---|---|
| Übergeordnetes Werk: |
volume:263 ; year:1992 ; number:1 ; day:01 ; month:02 ; pages:359-364 |
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| DOI / URN: |
10.1557/PROC-263-359 |
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| 520 | |a Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. | ||
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10.1557/PROC-263-359 doi (DE-627)SPR041525612 (SPR)PROC-263-359-e DE-627 ger DE-627 rakwb eng 670 ASE Dhar, N.K verfasserin aut Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. Boyd, P. verfasserin aut Martinka, M. verfasserin aut Benson, J.D. verfasserin aut Dinan, J.H. verfasserin aut Iliadis, A.A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 263(1992), 1 vom: 01. Feb., Seite 359-364 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:263 year:1992 number:1 day:01 month:02 pages:359-364 https://dx.doi.org/10.1557/PROC-263-359 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 263 1992 1 01 02 359-364 |
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10.1557/PROC-263-359 doi (DE-627)SPR041525612 (SPR)PROC-263-359-e DE-627 ger DE-627 rakwb eng 670 ASE Dhar, N.K verfasserin aut Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. Boyd, P. verfasserin aut Martinka, M. verfasserin aut Benson, J.D. verfasserin aut Dinan, J.H. verfasserin aut Iliadis, A.A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 263(1992), 1 vom: 01. Feb., Seite 359-364 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:263 year:1992 number:1 day:01 month:02 pages:359-364 https://dx.doi.org/10.1557/PROC-263-359 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 263 1992 1 01 02 359-364 |
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10.1557/PROC-263-359 doi (DE-627)SPR041525612 (SPR)PROC-263-359-e DE-627 ger DE-627 rakwb eng 670 ASE Dhar, N.K verfasserin aut Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. Boyd, P. verfasserin aut Martinka, M. verfasserin aut Benson, J.D. verfasserin aut Dinan, J.H. verfasserin aut Iliadis, A.A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 263(1992), 1 vom: 01. Feb., Seite 359-364 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:263 year:1992 number:1 day:01 month:02 pages:359-364 https://dx.doi.org/10.1557/PROC-263-359 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 263 1992 1 01 02 359-364 |
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10.1557/PROC-263-359 doi (DE-627)SPR041525612 (SPR)PROC-263-359-e DE-627 ger DE-627 rakwb eng 670 ASE Dhar, N.K verfasserin aut Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. Boyd, P. verfasserin aut Martinka, M. verfasserin aut Benson, J.D. verfasserin aut Dinan, J.H. verfasserin aut Iliadis, A.A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 263(1992), 1 vom: 01. Feb., Seite 359-364 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:263 year:1992 number:1 day:01 month:02 pages:359-364 https://dx.doi.org/10.1557/PROC-263-359 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 263 1992 1 01 02 359-364 |
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10.1557/PROC-263-359 doi (DE-627)SPR041525612 (SPR)PROC-263-359-e DE-627 ger DE-627 rakwb eng 670 ASE Dhar, N.K verfasserin aut Selected-Area Epitaxy of CdTe on GaAs with A Cantilever Shadow Mask 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. Boyd, P. verfasserin aut Martinka, M. verfasserin aut Benson, J.D. verfasserin aut Dinan, J.H. verfasserin aut Iliadis, A.A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 263(1992), 1 vom: 01. Feb., Seite 359-364 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:263 year:1992 number:1 day:01 month:02 pages:359-364 https://dx.doi.org/10.1557/PROC-263-359 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 263 1992 1 01 02 359-364 |
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Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. |
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Abstract A cantilever shadow masking technique has been used for the first time to grow CdTe in recesses of GaAs wafers. The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. An application to planar monolithic infrared focal plane arrays is discussed. |
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The use of this technique eliminated the deleterious effects of side wall growth. Scanning electron microscopy, electron channeling, Auger spectroscopy and photoluminescence were used to characterize these structures. 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Feb., Seite 359-364</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:263</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:359-364</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-263-359</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">263</subfield><subfield code="j">1992</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">02</subfield><subfield code="h">359-364</subfield></datafield></record></collection>
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