Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]
Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rose, Dirk [verfasserIn] Pietsch, Ullrich [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1995 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 379(1995), 1 vom: Dez., Seite 251-256 |
|---|---|
| Übergeordnetes Werk: |
volume:379 ; year:1995 ; number:1 ; month:12 ; pages:251-256 |
| Links: |
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| DOI / URN: |
10.1557/PROC-379-251 |
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SPR041563662 |
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| 520 | |a Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. | ||
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10.1557/PROC-379-251 doi (DE-627)SPR041563662 (SPR)PROC-379-251-e DE-627 ger DE-627 rakwb eng 670 ASE Rose, Dirk verfasserin aut Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. Pietsch, Ullrich verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 379(1995), 1 vom: Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:379 year:1995 number:1 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-379-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 379 1995 1 12 251-256 |
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10.1557/PROC-379-251 doi (DE-627)SPR041563662 (SPR)PROC-379-251-e DE-627 ger DE-627 rakwb eng 670 ASE Rose, Dirk verfasserin aut Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. Pietsch, Ullrich verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 379(1995), 1 vom: Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:379 year:1995 number:1 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-379-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 379 1995 1 12 251-256 |
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10.1557/PROC-379-251 doi (DE-627)SPR041563662 (SPR)PROC-379-251-e DE-627 ger DE-627 rakwb eng 670 ASE Rose, Dirk verfasserin aut Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. Pietsch, Ullrich verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 379(1995), 1 vom: Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:379 year:1995 number:1 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-379-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 379 1995 1 12 251-256 |
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10.1557/PROC-379-251 doi (DE-627)SPR041563662 (SPR)PROC-379-251-e DE-627 ger DE-627 rakwb eng 670 ASE Rose, Dirk verfasserin aut Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. Pietsch, Ullrich verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 379(1995), 1 vom: Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:379 year:1995 number:1 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-379-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 379 1995 1 12 251-256 |
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10.1557/PROC-379-251 doi (DE-627)SPR041563662 (SPR)PROC-379-251-e DE-627 ger DE-627 rakwb eng 670 ASE Rose, Dirk verfasserin aut Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. Pietsch, Ullrich verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 379(1995), 1 vom: Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:379 year:1995 number:1 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-379-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 379 1995 1 12 251-256 |
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Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] |
| abstract |
Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. |
| abstractGer |
Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. |
| abstract_unstemmed |
Abstract The depth profile of the defect structure in strained and partially relaxed $ Ga_{0.8} %$ In_{0.2} $As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements. |
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Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001] |
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Pietsch, Ullrich |
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Pietsch, Ullrich |
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57782046X |
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c |
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false |
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false |
| doi_str |
10.1557/PROC-379-251 |
| up_date |
2024-07-03T22:39:33.361Z |
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1803599346016452608 |
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Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm. The strength of the method is demonstrated on a sample series with similar thickness of the $ Ga_{0.8} %$ In_{0.2} $As sublayers, $ t_{a} $, but with varying thickness of the GaAs barrier, $ t_{b} $.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing $ t_{a} $ the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. 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7.4009867 |