Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers
Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Suzuki, M. [verfasserIn] Uenoyama, T. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1996 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 421(1996), 1 vom: Dez., Seite 171-182 |
|---|---|
| Übergeordnetes Werk: |
volume:421 ; year:1996 ; number:1 ; month:12 ; pages:171-182 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-421-171 |
|---|
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SPR041569377 |
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| 520 | |a Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. | ||
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10.1557/PROC-421-171 doi (DE-627)SPR041569377 (SPR)PROC-421-171-e DE-627 ger DE-627 rakwb eng 670 ASE Suzuki, M. verfasserin aut Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. Uenoyama, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 421(1996), 1 vom: Dez., Seite 171-182 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:421 year:1996 number:1 month:12 pages:171-182 https://dx.doi.org/10.1557/PROC-421-171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 421 1996 1 12 171-182 |
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10.1557/PROC-421-171 doi (DE-627)SPR041569377 (SPR)PROC-421-171-e DE-627 ger DE-627 rakwb eng 670 ASE Suzuki, M. verfasserin aut Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. Uenoyama, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 421(1996), 1 vom: Dez., Seite 171-182 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:421 year:1996 number:1 month:12 pages:171-182 https://dx.doi.org/10.1557/PROC-421-171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 421 1996 1 12 171-182 |
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10.1557/PROC-421-171 doi (DE-627)SPR041569377 (SPR)PROC-421-171-e DE-627 ger DE-627 rakwb eng 670 ASE Suzuki, M. verfasserin aut Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. Uenoyama, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 421(1996), 1 vom: Dez., Seite 171-182 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:421 year:1996 number:1 month:12 pages:171-182 https://dx.doi.org/10.1557/PROC-421-171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 421 1996 1 12 171-182 |
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10.1557/PROC-421-171 doi (DE-627)SPR041569377 (SPR)PROC-421-171-e DE-627 ger DE-627 rakwb eng 670 ASE Suzuki, M. verfasserin aut Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. Uenoyama, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 421(1996), 1 vom: Dez., Seite 171-182 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:421 year:1996 number:1 month:12 pages:171-182 https://dx.doi.org/10.1557/PROC-421-171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 421 1996 1 12 171-182 |
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10.1557/PROC-421-171 doi (DE-627)SPR041569377 (SPR)PROC-421-171-e DE-627 ger DE-627 rakwb eng 670 ASE Suzuki, M. verfasserin aut Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. Uenoyama, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 421(1996), 1 vom: Dez., Seite 171-182 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:421 year:1996 number:1 month:12 pages:171-182 https://dx.doi.org/10.1557/PROC-421-171 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 421 1996 1 12 171-182 |
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Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers |
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Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. |
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Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. |
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Abstract Subband structures and optical gains of the strained wurtzite GaN/AlGaN quantum well lasers are theoretically investigated on the basis of k·p theory. First-principles calculations axe used for deriving the unknown physical parameters, such as deformation potentials. Neither compressive nor tensile biaxial strains are so effective on the reduction of the threshold carrier density. It is also found that the uniaxial strain in the c-plane is one of the preferable approaches for the efficient improvement of the laser performance. |
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