Nonstoichiometry and Doping of Zinc Oxide
Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sleight, Arthur W. [verfasserIn] Wang, Ruiping [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1996 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 453(1996), 1 vom: Dez., Seite 323-330 |
|---|---|
| Übergeordnetes Werk: |
volume:453 ; year:1996 ; number:1 ; month:12 ; pages:323-330 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-453-323 |
|---|
| Katalog-ID: |
SPR041578201 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041578201 | ||
| 003 | DE-627 | ||
| 005 | 20220112052428.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1996 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-453-323 |2 doi | |
| 035 | |a (DE-627)SPR041578201 | ||
| 035 | |a (SPR)PROC-453-323-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Sleight, Arthur W. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Nonstoichiometry and Doping of Zinc Oxide |
| 264 | 1 | |c 1996 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. | ||
| 700 | 1 | |a Wang, Ruiping |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 453(1996), 1 vom: Dez., Seite 323-330 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:453 |g year:1996 |g number:1 |g month:12 |g pages:323-330 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-453-323 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 453 |j 1996 |e 1 |c 12 |h 323-330 | ||
| author_variant |
a w s aw aws r w rw |
|---|---|
| matchkey_str |
article:19464274:1996----::osocimtyndpno |
| hierarchy_sort_str |
1996 |
| publishDate |
1996 |
| allfields |
10.1557/PROC-453-323 doi (DE-627)SPR041578201 (SPR)PROC-453-323-e DE-627 ger DE-627 rakwb eng 670 ASE Sleight, Arthur W. verfasserin aut Nonstoichiometry and Doping of Zinc Oxide 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. Wang, Ruiping verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 453(1996), 1 vom: Dez., Seite 323-330 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:453 year:1996 number:1 month:12 pages:323-330 https://dx.doi.org/10.1557/PROC-453-323 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 453 1996 1 12 323-330 |
| spelling |
10.1557/PROC-453-323 doi (DE-627)SPR041578201 (SPR)PROC-453-323-e DE-627 ger DE-627 rakwb eng 670 ASE Sleight, Arthur W. verfasserin aut Nonstoichiometry and Doping of Zinc Oxide 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. Wang, Ruiping verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 453(1996), 1 vom: Dez., Seite 323-330 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:453 year:1996 number:1 month:12 pages:323-330 https://dx.doi.org/10.1557/PROC-453-323 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 453 1996 1 12 323-330 |
| allfields_unstemmed |
10.1557/PROC-453-323 doi (DE-627)SPR041578201 (SPR)PROC-453-323-e DE-627 ger DE-627 rakwb eng 670 ASE Sleight, Arthur W. verfasserin aut Nonstoichiometry and Doping of Zinc Oxide 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. Wang, Ruiping verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 453(1996), 1 vom: Dez., Seite 323-330 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:453 year:1996 number:1 month:12 pages:323-330 https://dx.doi.org/10.1557/PROC-453-323 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 453 1996 1 12 323-330 |
| allfieldsGer |
10.1557/PROC-453-323 doi (DE-627)SPR041578201 (SPR)PROC-453-323-e DE-627 ger DE-627 rakwb eng 670 ASE Sleight, Arthur W. verfasserin aut Nonstoichiometry and Doping of Zinc Oxide 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. Wang, Ruiping verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 453(1996), 1 vom: Dez., Seite 323-330 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:453 year:1996 number:1 month:12 pages:323-330 https://dx.doi.org/10.1557/PROC-453-323 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 453 1996 1 12 323-330 |
| allfieldsSound |
10.1557/PROC-453-323 doi (DE-627)SPR041578201 (SPR)PROC-453-323-e DE-627 ger DE-627 rakwb eng 670 ASE Sleight, Arthur W. verfasserin aut Nonstoichiometry and Doping of Zinc Oxide 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. Wang, Ruiping verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 453(1996), 1 vom: Dez., Seite 323-330 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:453 year:1996 number:1 month:12 pages:323-330 https://dx.doi.org/10.1557/PROC-453-323 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 453 1996 1 12 323-330 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 453(1996), 1 vom: Dez., Seite 323-330 volume:453 year:1996 number:1 month:12 pages:323-330 |
| sourceStr |
Enthalten in MRS online proceedings library 453(1996), 1 vom: Dez., Seite 323-330 volume:453 year:1996 number:1 month:12 pages:323-330 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Sleight, Arthur W. @@aut@@ Wang, Ruiping @@aut@@ |
| publishDateDaySort_date |
1996-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041578201 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041578201</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052428.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1996 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-453-323</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041578201</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-453-323-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sleight, Arthur W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonstoichiometry and Doping of Zinc Oxide</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Ruiping</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">453(1996), 1 vom: Dez., Seite 323-330</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:453</subfield><subfield code="g">year:1996</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:323-330</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-453-323</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">453</subfield><subfield code="j">1996</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">323-330</subfield></datafield></record></collection>
|
| author |
Sleight, Arthur W. |
| spellingShingle |
Sleight, Arthur W. ddc 670 Nonstoichiometry and Doping of Zinc Oxide |
| authorStr |
Sleight, Arthur W. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Nonstoichiometry and Doping of Zinc Oxide |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Nonstoichiometry and Doping of Zinc Oxide |
| ctrlnum |
(DE-627)SPR041578201 (SPR)PROC-453-323-e |
| title_full |
Nonstoichiometry and Doping of Zinc Oxide |
| author_sort |
Sleight, Arthur W. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1996 |
| contenttype_str_mv |
txt |
| container_start_page |
323 |
| author_browse |
Sleight, Arthur W. Wang, Ruiping |
| container_volume |
453 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Sleight, Arthur W. |
| doi_str_mv |
10.1557/PROC-453-323 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
nonstoichiometry and doping of zinc oxide |
| title_auth |
Nonstoichiometry and Doping of Zinc Oxide |
| abstract |
Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. |
| abstractGer |
Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. |
| abstract_unstemmed |
Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Nonstoichiometry and Doping of Zinc Oxide |
| url |
https://dx.doi.org/10.1557/PROC-453-323 |
| remote_bool |
true |
| author2 |
Wang, Ruiping |
| author2Str |
Wang, Ruiping |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-453-323 |
| up_date |
2024-07-03T22:42:43.932Z |
| _version_ |
1803599545854066688 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041578201</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052428.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1996 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-453-323</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041578201</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-453-323-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sleight, Arthur W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonstoichiometry and Doping of Zinc Oxide</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Contrary to the commonly accepted model, we conclude that the zinc interstitials in $ Zn_{1+x} $O are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Ruiping</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">453(1996), 1 vom: Dez., Seite 323-330</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:453</subfield><subfield code="g">year:1996</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:323-330</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-453-323</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">453</subfield><subfield code="j">1996</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">323-330</subfield></datafield></record></collection>
|
| score |
7.399227 |