Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD
Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed fil...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Banerjee, A. [verfasserIn] Lucovsky, G. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1996 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 420(1996), 1 vom: Dez., Seite 405-410 |
|---|---|
| Übergeordnetes Werk: |
volume:420 ; year:1996 ; number:1 ; month:12 ; pages:405-410 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-420-405 |
|---|
| Katalog-ID: |
SPR041613341 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041613341 | ||
| 003 | DE-627 | ||
| 005 | 20220112052331.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1996 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-420-405 |2 doi | |
| 035 | |a (DE-627)SPR041613341 | ||
| 035 | |a (SPR)PROC-420-405-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Banerjee, A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| 264 | 1 | |c 1996 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. | ||
| 700 | 1 | |a Lucovsky, G. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 420(1996), 1 vom: Dez., Seite 405-410 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:420 |g year:1996 |g number:1 |g month:12 |g pages:405-410 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-420-405 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 420 |j 1996 |e 1 |c 12 |h 405-410 | ||
| author_variant |
a b ab g l gl |
|---|---|
| matchkey_str |
article:19464274:1996----::hssprtobrpdhraanaigniuoieadi |
| hierarchy_sort_str |
1996 |
| publishDate |
1996 |
| allfields |
10.1557/PROC-420-405 doi (DE-627)SPR041613341 (SPR)PROC-420-405-e DE-627 ger DE-627 rakwb eng 670 ASE Banerjee, A. verfasserin aut Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. Lucovsky, G. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 405-410 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:405-410 https://dx.doi.org/10.1557/PROC-420-405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 405-410 |
| spelling |
10.1557/PROC-420-405 doi (DE-627)SPR041613341 (SPR)PROC-420-405-e DE-627 ger DE-627 rakwb eng 670 ASE Banerjee, A. verfasserin aut Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. Lucovsky, G. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 405-410 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:405-410 https://dx.doi.org/10.1557/PROC-420-405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 405-410 |
| allfields_unstemmed |
10.1557/PROC-420-405 doi (DE-627)SPR041613341 (SPR)PROC-420-405-e DE-627 ger DE-627 rakwb eng 670 ASE Banerjee, A. verfasserin aut Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. Lucovsky, G. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 405-410 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:405-410 https://dx.doi.org/10.1557/PROC-420-405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 405-410 |
| allfieldsGer |
10.1557/PROC-420-405 doi (DE-627)SPR041613341 (SPR)PROC-420-405-e DE-627 ger DE-627 rakwb eng 670 ASE Banerjee, A. verfasserin aut Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. Lucovsky, G. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 405-410 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:405-410 https://dx.doi.org/10.1557/PROC-420-405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 405-410 |
| allfieldsSound |
10.1557/PROC-420-405 doi (DE-627)SPR041613341 (SPR)PROC-420-405-e DE-627 ger DE-627 rakwb eng 670 ASE Banerjee, A. verfasserin aut Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD 1996 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. Lucovsky, G. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 420(1996), 1 vom: Dez., Seite 405-410 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:420 year:1996 number:1 month:12 pages:405-410 https://dx.doi.org/10.1557/PROC-420-405 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 420 1996 1 12 405-410 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 420(1996), 1 vom: Dez., Seite 405-410 volume:420 year:1996 number:1 month:12 pages:405-410 |
| sourceStr |
Enthalten in MRS online proceedings library 420(1996), 1 vom: Dez., Seite 405-410 volume:420 year:1996 number:1 month:12 pages:405-410 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Banerjee, A. @@aut@@ Lucovsky, G. @@aut@@ |
| publishDateDaySort_date |
1996-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041613341 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041613341</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052331.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1996 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-420-405</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041613341</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-420-405-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Banerjee, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lucovsky, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">420(1996), 1 vom: Dez., Seite 405-410</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:420</subfield><subfield code="g">year:1996</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:405-410</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-420-405</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">420</subfield><subfield code="j">1996</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">405-410</subfield></datafield></record></collection>
|
| author |
Banerjee, A. |
| spellingShingle |
Banerjee, A. ddc 670 Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| authorStr |
Banerjee, A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| ctrlnum |
(DE-627)SPR041613341 (SPR)PROC-420-405-e |
| title_full |
Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| author_sort |
Banerjee, A. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1996 |
| contenttype_str_mv |
txt |
| container_start_page |
405 |
| author_browse |
Banerjee, A. Lucovsky, G. |
| container_volume |
420 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Banerjee, A. |
| doi_str_mv |
10.1557/PROC-420-405 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
phase separation by rapid thermal annealing in si-sub-oxides andnitrides formed by plasma cvd |
| title_auth |
Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| abstract |
Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. |
| abstractGer |
Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. |
| abstract_unstemmed |
Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD |
| url |
https://dx.doi.org/10.1557/PROC-420-405 |
| remote_bool |
true |
| author2 |
Lucovsky, G. |
| author2Str |
Lucovsky, G. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-420-405 |
| up_date |
2024-07-03T22:52:37.313Z |
| _version_ |
1803600168028733440 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041613341</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052331.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1996 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-420-405</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041613341</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-420-405-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Banerjee, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides Andnitrides Formed by Plasma CVD</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Hydrogenated silicon suboxide and subnitride films were deposited by a remote plasma enhanced chemical-vapor deposition (RPECVD) process. Rapid thermal annealing (RTA) of these alloys eliminated all of the bonded hydrogen and formed a two phase system. The microstructure of the annealed films showed silicon crystallites (c-Si) surrounded by amorphous layers. The amorphous layers were identified as $ SiO_{2} $ and $ Si_{3} %$ N_{4} $ in the annealed suboxides and subnitrides, respectively. The as-deposited films showed band edge photoluminescence (PL); however, no PL was observed from the annealed films. This indicates that there was no significant suboxide or subnitride bonding in the amorphous layers at the metallurgically-sharp c-Si-$ SiO_{2} $ and c-Si-$ Si_{3} %$ N_{4} $ interfaces, respectively.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lucovsky, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">420(1996), 1 vom: Dez., Seite 405-410</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:420</subfield><subfield code="g">year:1996</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:405-410</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-420-405</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">420</subfield><subfield code="j">1996</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">405-410</subfield></datafield></record></collection>
|
| score |
7.4013023 |