Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids
Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigrat...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Oates, A. S. [verfasserIn] Lloyd, J. R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 338(1994), 1 vom: 01. Dez., Seite 269-274 |
|---|---|
| Übergeordnetes Werk: |
volume:338 ; year:1994 ; number:1 ; day:01 ; month:12 ; pages:269-274 |
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| DOI / URN: |
10.1557/PROC-338-269 |
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| 520 | |a Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. | ||
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10.1557/PROC-338-269 doi (DE-627)SPR041633083 (SPR)PROC-338-269-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. Lloyd, J. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 338(1994), 1 vom: 01. Dez., Seite 269-274 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:338 year:1994 number:1 day:01 month:12 pages:269-274 https://dx.doi.org/10.1557/PROC-338-269 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 338 1994 1 01 12 269-274 |
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10.1557/PROC-338-269 doi (DE-627)SPR041633083 (SPR)PROC-338-269-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. Lloyd, J. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 338(1994), 1 vom: 01. Dez., Seite 269-274 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:338 year:1994 number:1 day:01 month:12 pages:269-274 https://dx.doi.org/10.1557/PROC-338-269 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 338 1994 1 01 12 269-274 |
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10.1557/PROC-338-269 doi (DE-627)SPR041633083 (SPR)PROC-338-269-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. Lloyd, J. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 338(1994), 1 vom: 01. Dez., Seite 269-274 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:338 year:1994 number:1 day:01 month:12 pages:269-274 https://dx.doi.org/10.1557/PROC-338-269 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 338 1994 1 01 12 269-274 |
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10.1557/PROC-338-269 doi (DE-627)SPR041633083 (SPR)PROC-338-269-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. Lloyd, J. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 338(1994), 1 vom: 01. Dez., Seite 269-274 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:338 year:1994 number:1 day:01 month:12 pages:269-274 https://dx.doi.org/10.1557/PROC-338-269 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 338 1994 1 01 12 269-274 |
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10.1557/PROC-338-269 doi (DE-627)SPR041633083 (SPR)PROC-338-269-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. Lloyd, J. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 338(1994), 1 vom: 01. Dez., Seite 269-274 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:338 year:1994 number:1 day:01 month:12 pages:269-274 https://dx.doi.org/10.1557/PROC-338-269 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 338 1994 1 01 12 269-274 |
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Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. |
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Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. |
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Abstract Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients. |
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