Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide
Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Brown, S. W. [verfasserIn] Rand, S. C. [verfasserIn] Hong, C.-H. [verfasserIn] Pavlidis, D. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 339(1994), 1 vom: 01. Dez., Seite 503-508 |
|---|---|
| Übergeordnetes Werk: |
volume:339 ; year:1994 ; number:1 ; day:01 ; month:12 ; pages:503-508 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-339-503 |
|---|
| Katalog-ID: |
SPR041634411 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041634411 | ||
| 003 | DE-627 | ||
| 005 | 20220112052033.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1994 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-339-503 |2 doi | |
| 035 | |a (DE-627)SPR041634411 | ||
| 035 | |a (SPR)PROC-339-503-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Brown, S. W. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| 264 | 1 | |c 1994 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. | ||
| 700 | 1 | |a Rand, S. C. |e verfasserin |4 aut | |
| 700 | 1 | |a Hong, C.-H. |e verfasserin |4 aut | |
| 700 | 1 | |a Pavlidis, D. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 339(1994), 1 vom: 01. Dez., Seite 503-508 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:339 |g year:1994 |g number:1 |g day:01 |g month:12 |g pages:503-508 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-339-503 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 339 |j 1994 |e 1 |b 01 |c 12 |h 503-508 | ||
| author_variant |
s w b sw swb s c r sc scr c h h chh d p dp |
|---|---|
| matchkey_str |
article:19464274:1994----::aasatrnadryifatosuisfaluntieimg |
| hierarchy_sort_str |
1994 |
| publishDate |
1994 |
| allfields |
10.1557/PROC-339-503 doi (DE-627)SPR041634411 (SPR)PROC-339-503-e DE-627 ger DE-627 rakwb eng 670 ASE Brown, S. W. verfasserin aut Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. Rand, S. C. verfasserin aut Hong, C.-H. verfasserin aut Pavlidis, D. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 339(1994), 1 vom: 01. Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:339 year:1994 number:1 day:01 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-339-503 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 339 1994 1 01 12 503-508 |
| spelling |
10.1557/PROC-339-503 doi (DE-627)SPR041634411 (SPR)PROC-339-503-e DE-627 ger DE-627 rakwb eng 670 ASE Brown, S. W. verfasserin aut Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. Rand, S. C. verfasserin aut Hong, C.-H. verfasserin aut Pavlidis, D. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 339(1994), 1 vom: 01. Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:339 year:1994 number:1 day:01 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-339-503 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 339 1994 1 01 12 503-508 |
| allfields_unstemmed |
10.1557/PROC-339-503 doi (DE-627)SPR041634411 (SPR)PROC-339-503-e DE-627 ger DE-627 rakwb eng 670 ASE Brown, S. W. verfasserin aut Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. Rand, S. C. verfasserin aut Hong, C.-H. verfasserin aut Pavlidis, D. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 339(1994), 1 vom: 01. Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:339 year:1994 number:1 day:01 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-339-503 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 339 1994 1 01 12 503-508 |
| allfieldsGer |
10.1557/PROC-339-503 doi (DE-627)SPR041634411 (SPR)PROC-339-503-e DE-627 ger DE-627 rakwb eng 670 ASE Brown, S. W. verfasserin aut Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. Rand, S. C. verfasserin aut Hong, C.-H. verfasserin aut Pavlidis, D. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 339(1994), 1 vom: 01. Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:339 year:1994 number:1 day:01 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-339-503 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 339 1994 1 01 12 503-508 |
| allfieldsSound |
10.1557/PROC-339-503 doi (DE-627)SPR041634411 (SPR)PROC-339-503-e DE-627 ger DE-627 rakwb eng 670 ASE Brown, S. W. verfasserin aut Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide 1994 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. Rand, S. C. verfasserin aut Hong, C.-H. verfasserin aut Pavlidis, D. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 339(1994), 1 vom: 01. Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:339 year:1994 number:1 day:01 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-339-503 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 339 1994 1 01 12 503-508 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 339(1994), 1 vom: 01. Dez., Seite 503-508 volume:339 year:1994 number:1 day:01 month:12 pages:503-508 |
| sourceStr |
Enthalten in MRS online proceedings library 339(1994), 1 vom: 01. Dez., Seite 503-508 volume:339 year:1994 number:1 day:01 month:12 pages:503-508 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Brown, S. W. @@aut@@ Rand, S. C. @@aut@@ Hong, C.-H. @@aut@@ Pavlidis, D. @@aut@@ |
| publishDateDaySort_date |
1994-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041634411 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041634411</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052033.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-339-503</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041634411</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-339-503-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Brown, S. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rand, S. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hong, C.-H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pavlidis, D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">339(1994), 1 vom: 01. Dez., Seite 503-508</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:339</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:503-508</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-339-503</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">339</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">503-508</subfield></datafield></record></collection>
|
| author |
Brown, S. W. |
| spellingShingle |
Brown, S. W. ddc 670 Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| authorStr |
Brown, S. W. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| ctrlnum |
(DE-627)SPR041634411 (SPR)PROC-339-503-e |
| title_full |
Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| author_sort |
Brown, S. W. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1994 |
| contenttype_str_mv |
txt |
| container_start_page |
503 |
| author_browse |
Brown, S. W. Rand, S. C. Hong, C.-H. Pavlidis, D. |
| container_volume |
339 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Brown, S. W. |
| doi_str_mv |
10.1557/PROC-339-503 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
raman scattering and x-ray diffraction studies of gallium nitride films grown on (100) gallium arsenide |
| title_auth |
Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| abstract |
Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. |
| abstractGer |
Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. |
| abstract_unstemmed |
Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide |
| url |
https://dx.doi.org/10.1557/PROC-339-503 |
| remote_bool |
true |
| author2 |
Rand, S. C. Hong, C.-H. Pavlidis, D. |
| author2Str |
Rand, S. C. Hong, C.-H. Pavlidis, D. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-339-503 |
| up_date |
2024-07-03T22:58:30.546Z |
| _version_ |
1803600538419331072 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041634411</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052033.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-339-503</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041634411</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-339-503-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Brown, S. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Raman spectroscopy and x-ray diffraction are used to characterize Gallium Nitride (GaN) films grown on (100) Gallium Arsenide (GaAs) substrates. Reflection X-ray diffraction data from (200) planes of GaAs and cubic GaN are presented. The linewidth of the cubic GaN diffraction peak is shown to be a strong function of the growth temperature. Raman spectra are presented for a series of samples grown at different temperatures. Raman scattering is characterized by strong peaks at 560 $ cm^{-1} $ and at 736 $ cm^{-1} $, corresponding to TO and LO phonon modes of cubic GaN, respectively. An additional, unexplained feature at 768 $ cm^{-1} $ is clearly observed in Raman spectra of c-GaN samples grown at lower temperatures. The polarization dependence of the intensity of the GaN LO phonon mode is presented and compared with the GaAs LO phonon mode to establish the relative orientation of the c-GaN epitaxy on GaAs.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rand, S. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hong, C.-H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pavlidis, D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">339(1994), 1 vom: 01. Dez., Seite 503-508</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:339</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:503-508</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-339-503</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">339</subfield><subfield code="j">1994</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">503-508</subfield></datafield></record></collection>
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7.401639 |