Interaction of Deuterium with Cavities in Crystalline Si and MgO
Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Fedorov, A. V. [verfasserIn] Veen, A. Van [verfasserIn] Schut, H. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1998 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 540(1998), 1 vom: Dez., Seite 231-236 |
|---|---|
| Übergeordnetes Werk: |
volume:540 ; year:1998 ; number:1 ; month:12 ; pages:231-236 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-540-231 |
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SPR041640128 |
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| 520 | |a Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. | ||
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10.1557/PROC-540-231 doi (DE-627)SPR041640128 (SPR)PROC-540-231-e DE-627 ger DE-627 rakwb eng 670 ASE Fedorov, A. V. verfasserin aut Interaction of Deuterium with Cavities in Crystalline Si and MgO 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. Veen, A. Van verfasserin aut Schut, H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 540(1998), 1 vom: Dez., Seite 231-236 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:540 year:1998 number:1 month:12 pages:231-236 https://dx.doi.org/10.1557/PROC-540-231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 540 1998 1 12 231-236 |
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10.1557/PROC-540-231 doi (DE-627)SPR041640128 (SPR)PROC-540-231-e DE-627 ger DE-627 rakwb eng 670 ASE Fedorov, A. V. verfasserin aut Interaction of Deuterium with Cavities in Crystalline Si and MgO 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. Veen, A. Van verfasserin aut Schut, H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 540(1998), 1 vom: Dez., Seite 231-236 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:540 year:1998 number:1 month:12 pages:231-236 https://dx.doi.org/10.1557/PROC-540-231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 540 1998 1 12 231-236 |
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10.1557/PROC-540-231 doi (DE-627)SPR041640128 (SPR)PROC-540-231-e DE-627 ger DE-627 rakwb eng 670 ASE Fedorov, A. V. verfasserin aut Interaction of Deuterium with Cavities in Crystalline Si and MgO 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. Veen, A. Van verfasserin aut Schut, H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 540(1998), 1 vom: Dez., Seite 231-236 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:540 year:1998 number:1 month:12 pages:231-236 https://dx.doi.org/10.1557/PROC-540-231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 540 1998 1 12 231-236 |
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10.1557/PROC-540-231 doi (DE-627)SPR041640128 (SPR)PROC-540-231-e DE-627 ger DE-627 rakwb eng 670 ASE Fedorov, A. V. verfasserin aut Interaction of Deuterium with Cavities in Crystalline Si and MgO 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. Veen, A. Van verfasserin aut Schut, H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 540(1998), 1 vom: Dez., Seite 231-236 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:540 year:1998 number:1 month:12 pages:231-236 https://dx.doi.org/10.1557/PROC-540-231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 540 1998 1 12 231-236 |
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10.1557/PROC-540-231 doi (DE-627)SPR041640128 (SPR)PROC-540-231-e DE-627 ger DE-627 rakwb eng 670 ASE Fedorov, A. V. verfasserin aut Interaction of Deuterium with Cavities in Crystalline Si and MgO 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. Veen, A. Van verfasserin aut Schut, H. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 540(1998), 1 vom: Dez., Seite 231-236 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:540 year:1998 number:1 month:12 pages:231-236 https://dx.doi.org/10.1557/PROC-540-231 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 540 1998 1 12 231-236 |
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Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. |
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Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. |
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Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041640128</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052628.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-540-231</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041640128</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-540-231-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Fedorov, A. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Interaction of Deuterium with Cavities in Crystalline Si and MgO</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract To create cavities a Si (100) single crystal and a MgO (100) single crystal were subjected to 30 keV 3 He implantation and a subsequent annealing at 1100 K. In both materials the formation of cavities takes place during the annealing stage when the implanted gas is released. The presence of cavities was detected by positron beam analysis. After the creation of cavities was established the samples were re-filled with deuterium by means of 15 keV $ D^{+} $ implantation with a dose of $ 10^{15} $ $ cm^{−2} $. During the subsequent annealing at 1000 K D escaped from the cavities. In the case of MgO further growth of cavities was observed.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Veen, A. Van</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schut, H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">540(1998), 1 vom: Dez., Seite 231-236</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:540</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:231-236</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-540-231</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">540</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">231-236</subfield></datafield></record></collection>
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