Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses
Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic i...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Cook, Robert F. [verfasserIn] Liniger, Eric G. [verfasserIn] Klaus, David P. [verfasserIn] Simonyi, Eva E. [verfasserIn] Cohen, Stephan A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 511(1998), 1 vom: Jan., Seite 33-38 |
|---|---|
| Übergeordnetes Werk: |
volume:511 ; year:1998 ; number:1 ; month:01 ; pages:33-38 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-511-33 |
|---|
| Katalog-ID: |
SPR041665929 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041665929 | ||
| 003 | DE-627 | ||
| 005 | 20220112052551.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201102s1998 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-511-33 |2 doi | |
| 035 | |a (DE-627)SPR041665929 | ||
| 035 | |a (SPR)PROC-511-33-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Cook, Robert F. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| 264 | 1 | |c 1998 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. | ||
| 700 | 1 | |a Liniger, Eric G. |e verfasserin |4 aut | |
| 700 | 1 | |a Klaus, David P. |e verfasserin |4 aut | |
| 700 | 1 | |a Simonyi, Eva E. |e verfasserin |4 aut | |
| 700 | 1 | |a Cohen, Stephan A. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 511(1998), 1 vom: Jan., Seite 33-38 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:511 |g year:1998 |g number:1 |g month:01 |g pages:33-38 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-511-33 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 511 |j 1998 |e 1 |c 01 |h 33-38 | ||
| author_variant |
r f c rf rfc e g l eg egl d p k dp dpk e e s ee ees s a c sa sac |
|---|---|
| matchkey_str |
article:19464274:1998----::rpriseeomndrncrnolwilcrco |
| hierarchy_sort_str |
1998 |
| publishDate |
1998 |
| allfields |
10.1557/PROC-511-33 doi (DE-627)SPR041665929 (SPR)PROC-511-33-e DE-627 ger DE-627 rakwb eng 670 ASE Cook, Robert F. verfasserin aut Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. Liniger, Eric G. verfasserin aut Klaus, David P. verfasserin aut Simonyi, Eva E. verfasserin aut Cohen, Stephan A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 511(1998), 1 vom: Jan., Seite 33-38 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:511 year:1998 number:1 month:01 pages:33-38 https://dx.doi.org/10.1557/PROC-511-33 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 511 1998 1 01 33-38 |
| spelling |
10.1557/PROC-511-33 doi (DE-627)SPR041665929 (SPR)PROC-511-33-e DE-627 ger DE-627 rakwb eng 670 ASE Cook, Robert F. verfasserin aut Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. Liniger, Eric G. verfasserin aut Klaus, David P. verfasserin aut Simonyi, Eva E. verfasserin aut Cohen, Stephan A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 511(1998), 1 vom: Jan., Seite 33-38 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:511 year:1998 number:1 month:01 pages:33-38 https://dx.doi.org/10.1557/PROC-511-33 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 511 1998 1 01 33-38 |
| allfields_unstemmed |
10.1557/PROC-511-33 doi (DE-627)SPR041665929 (SPR)PROC-511-33-e DE-627 ger DE-627 rakwb eng 670 ASE Cook, Robert F. verfasserin aut Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. Liniger, Eric G. verfasserin aut Klaus, David P. verfasserin aut Simonyi, Eva E. verfasserin aut Cohen, Stephan A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 511(1998), 1 vom: Jan., Seite 33-38 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:511 year:1998 number:1 month:01 pages:33-38 https://dx.doi.org/10.1557/PROC-511-33 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 511 1998 1 01 33-38 |
| allfieldsGer |
10.1557/PROC-511-33 doi (DE-627)SPR041665929 (SPR)PROC-511-33-e DE-627 ger DE-627 rakwb eng 670 ASE Cook, Robert F. verfasserin aut Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. Liniger, Eric G. verfasserin aut Klaus, David P. verfasserin aut Simonyi, Eva E. verfasserin aut Cohen, Stephan A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 511(1998), 1 vom: Jan., Seite 33-38 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:511 year:1998 number:1 month:01 pages:33-38 https://dx.doi.org/10.1557/PROC-511-33 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 511 1998 1 01 33-38 |
| allfieldsSound |
10.1557/PROC-511-33 doi (DE-627)SPR041665929 (SPR)PROC-511-33-e DE-627 ger DE-627 rakwb eng 670 ASE Cook, Robert F. verfasserin aut Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. Liniger, Eric G. verfasserin aut Klaus, David P. verfasserin aut Simonyi, Eva E. verfasserin aut Cohen, Stephan A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 511(1998), 1 vom: Jan., Seite 33-38 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:511 year:1998 number:1 month:01 pages:33-38 https://dx.doi.org/10.1557/PROC-511-33 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 511 1998 1 01 33-38 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 511(1998), 1 vom: Jan., Seite 33-38 volume:511 year:1998 number:1 month:01 pages:33-38 |
| sourceStr |
Enthalten in MRS online proceedings library 511(1998), 1 vom: Jan., Seite 33-38 volume:511 year:1998 number:1 month:01 pages:33-38 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Cook, Robert F. @@aut@@ Liniger, Eric G. @@aut@@ Klaus, David P. @@aut@@ Simonyi, Eva E. @@aut@@ Cohen, Stephan A. @@aut@@ |
| publishDateDaySort_date |
1998-01-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041665929 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041665929</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052551.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-511-33</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041665929</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-511-33-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cook, Robert F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liniger, Eric G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klaus, David P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simonyi, Eva E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cohen, Stephan A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">511(1998), 1 vom: Jan., Seite 33-38</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:511</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:33-38</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-511-33</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">511</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">33-38</subfield></datafield></record></collection>
|
| author |
Cook, Robert F. |
| spellingShingle |
Cook, Robert F. ddc 670 Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| authorStr |
Cook, Robert F. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| ctrlnum |
(DE-627)SPR041665929 (SPR)PROC-511-33-e |
| title_full |
Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| author_sort |
Cook, Robert F. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1998 |
| contenttype_str_mv |
txt |
| container_start_page |
33 |
| author_browse |
Cook, Robert F. Liniger, Eric G. Klaus, David P. Simonyi, Eva E. Cohen, Stephan A. |
| container_volume |
511 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Cook, Robert F. |
| doi_str_mv |
10.1557/PROC-511-33 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
properties development during curing of low dielectric-constant spin-on glasses |
| title_auth |
Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| abstract |
Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. |
| abstractGer |
Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. |
| abstract_unstemmed |
Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses |
| url |
https://dx.doi.org/10.1557/PROC-511-33 |
| remote_bool |
true |
| author2 |
Liniger, Eric G. Klaus, David P. Simonyi, Eva E. Cohen, Stephan A. |
| author2Str |
Liniger, Eric G. Klaus, David P. Simonyi, Eva E. Cohen, Stephan A. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-511-33 |
| up_date |
2024-07-03T23:06:38.286Z |
| _version_ |
1803601049854935040 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041665929</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052551.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201102s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-511-33</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041665929</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-511-33-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cook, Robert F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Properties Development During Curing of Low Dielectric-Constant Spin-On Glasses</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Variations in the electrical and mechanical properties of silsesquioxane spin-on glass thin films are examined as a function of curing time and temperature. Particular attention is paid to the trade-off between producing low dielectric constant films, suitable for advanced microelectronic interconnection structures, and mechanically stable films,able to withstand semiconductor wafer fabrication processes. Two critical aspects of the mechanical stability of spin-on glasses are shown to be: the positive thermal expansion mismatch with silicon-leading to tensile film stresses; and reactivity with water-leading to susceptibility to stress-corrosion cracking.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liniger, Eric G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klaus, David P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simonyi, Eva E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cohen, Stephan A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">511(1998), 1 vom: Jan., Seite 33-38</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:511</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:33-38</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-511-33</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">511</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">33-38</subfield></datafield></record></collection>
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