The Resolution of Photoelectrochemically Etched Features

Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using lase...
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Autor*in:	Cheng, J. [verfasserIn] Kohl, P. A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1983

Übergeordnetes Werk:	Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 29(1983), 1 vom: 01. Sept., Seite 127-132
Übergeordnetes Werk:	volume:29 ; year:1983 ; number:1 ; day:01 ; month:09 ; pages:127-132

Links:	Volltext

DOI / URN:	10.1557/PROC-29-127

Katalog-ID:	SPR041687590

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spelling	10.1557/PROC-29-127 doi (DE-627)SPR041687590 (SPR)PROC-29-127-e DE-627 ger DE-627 rakwb eng 670 ASE Cheng, J. verfasserin aut The Resolution of Photoelectrochemically Etched Features 1983 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed. Kohl, P. A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 29(1983), 1 vom: 01. Sept., Seite 127-132 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:29 year:1983 number:1 day:01 month:09 pages:127-132 https://dx.doi.org/10.1557/PROC-29-127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 29 1983 1 01 09 127-132
allfields_unstemmed	10.1557/PROC-29-127 doi (DE-627)SPR041687590 (SPR)PROC-29-127-e DE-627 ger DE-627 rakwb eng 670 ASE Cheng, J. verfasserin aut The Resolution of Photoelectrochemically Etched Features 1983 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed. Kohl, P. A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 29(1983), 1 vom: 01. Sept., Seite 127-132 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:29 year:1983 number:1 day:01 month:09 pages:127-132 https://dx.doi.org/10.1557/PROC-29-127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 29 1983 1 01 09 127-132
allfieldsGer	10.1557/PROC-29-127 doi (DE-627)SPR041687590 (SPR)PROC-29-127-e DE-627 ger DE-627 rakwb eng 670 ASE Cheng, J. verfasserin aut The Resolution of Photoelectrochemically Etched Features 1983 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed. Kohl, P. A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 29(1983), 1 vom: 01. Sept., Seite 127-132 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:29 year:1983 number:1 day:01 month:09 pages:127-132 https://dx.doi.org/10.1557/PROC-29-127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 29 1983 1 01 09 127-132
allfieldsSound	10.1557/PROC-29-127 doi (DE-627)SPR041687590 (SPR)PROC-29-127-e DE-627 ger DE-627 rakwb eng 670 ASE Cheng, J. verfasserin aut The Resolution of Photoelectrochemically Etched Features 1983 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed. Kohl, P. A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 29(1983), 1 vom: 01. Sept., Seite 127-132 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:29 year:1983 number:1 day:01 month:09 pages:127-132 https://dx.doi.org/10.1557/PROC-29-127 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 29 1983 1 01 09 127-132
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title_sort	resolution of photoelectrochemically etched features
title_auth	The Resolution of Photoelectrochemically Etched Features
abstract	Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.
abstractGer	Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.
abstract_unstemmed	Abstract The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200-µm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.
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