Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature
Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of t...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Luo, L. [verfasserIn] Smith, G. A. [verfasserIn] Gibson, W. M. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1989 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 160(1989), 1 vom: Dez., Seite 263-268 |
|---|---|
| Übergeordnetes Werk: |
volume:160 ; year:1989 ; number:1 ; month:12 ; pages:263-268 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-160-263 |
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SPR041742869 |
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| 520 | |a Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. | ||
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| 700 | 1 | |a Gibson, W. M. |e verfasserin |4 aut | |
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10.1557/PROC-160-263 doi (DE-627)SPR041742869 (SPR)PROC-160-263-e DE-627 ger DE-627 rakwb eng 670 ASE Luo, L. verfasserin aut Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. Smith, G. A. verfasserin aut Gibson, W. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 160(1989), 1 vom: Dez., Seite 263-268 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:160 year:1989 number:1 month:12 pages:263-268 https://dx.doi.org/10.1557/PROC-160-263 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 160 1989 1 12 263-268 |
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10.1557/PROC-160-263 doi (DE-627)SPR041742869 (SPR)PROC-160-263-e DE-627 ger DE-627 rakwb eng 670 ASE Luo, L. verfasserin aut Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. Smith, G. A. verfasserin aut Gibson, W. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 160(1989), 1 vom: Dez., Seite 263-268 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:160 year:1989 number:1 month:12 pages:263-268 https://dx.doi.org/10.1557/PROC-160-263 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 160 1989 1 12 263-268 |
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10.1557/PROC-160-263 doi (DE-627)SPR041742869 (SPR)PROC-160-263-e DE-627 ger DE-627 rakwb eng 670 ASE Luo, L. verfasserin aut Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. Smith, G. A. verfasserin aut Gibson, W. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 160(1989), 1 vom: Dez., Seite 263-268 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:160 year:1989 number:1 month:12 pages:263-268 https://dx.doi.org/10.1557/PROC-160-263 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 160 1989 1 12 263-268 |
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10.1557/PROC-160-263 doi (DE-627)SPR041742869 (SPR)PROC-160-263-e DE-627 ger DE-627 rakwb eng 670 ASE Luo, L. verfasserin aut Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. Smith, G. A. verfasserin aut Gibson, W. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 160(1989), 1 vom: Dez., Seite 263-268 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:160 year:1989 number:1 month:12 pages:263-268 https://dx.doi.org/10.1557/PROC-160-263 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 160 1989 1 12 263-268 |
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10.1557/PROC-160-263 doi (DE-627)SPR041742869 (SPR)PROC-160-263-e DE-627 ger DE-627 rakwb eng 670 ASE Luo, L. verfasserin aut Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature 1989 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. Smith, G. A. verfasserin aut Gibson, W. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 160(1989), 1 vom: Dez., Seite 263-268 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:160 year:1989 number:1 month:12 pages:263-268 https://dx.doi.org/10.1557/PROC-160-263 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 160 1989 1 12 263-268 |
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Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature |
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Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. |
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Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. |
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Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041742869</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051606.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201103s1989 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-160-263</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041742869</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-160-263-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Luo, L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1989</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ∼ 3 ML) leads to the growth of $ NiSi_{2} $ which is thought to be a diffusion barrier that terminates further formation of $ NiSi_{2} $ at room temperature.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smith, G. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gibson, W. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">160(1989), 1 vom: Dez., Seite 263-268</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:160</subfield><subfield code="g">year:1989</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:263-268</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-160-263</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">160</subfield><subfield code="j">1989</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">263-268</subfield></datafield></record></collection>
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