Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd
Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as lo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, H. S. [verfasserIn] Han, W. Y. [verfasserIn] Lu, Y. [verfasserIn] Cole, M. W. [verfasserIn] Lareau, R. T. [verfasserIn] Casas, L. [verfasserIn] Thompson, R. J. [verfasserIn] De Anni, A. [verfasserIn] Jones, K. A. [verfasserIn] Yang, L. W. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1991 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 240(1991), 1 vom: 01. Aug., Seite 467-472 |
|---|---|
| Übergeordnetes Werk: |
volume:240 ; year:1991 ; number:1 ; day:01 ; month:08 ; pages:467-472 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-240-467 |
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SPR041746910 |
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| 520 | |a Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. | ||
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10.1557/PROC-240-467 doi (DE-627)SPR041746910 (SPR)PROC-240-467-e DE-627 ger DE-627 rakwb eng 670 ASE Lee, H. S. verfasserin aut Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. Han, W. Y. verfasserin aut Lu, Y. verfasserin aut Cole, M. W. verfasserin aut Lareau, R. T. verfasserin aut Casas, L. verfasserin aut Thompson, R. J. verfasserin aut De Anni, A. verfasserin aut Jones, K. A. verfasserin aut Yang, L. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 240(1991), 1 vom: 01. Aug., Seite 467-472 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:240 year:1991 number:1 day:01 month:08 pages:467-472 https://dx.doi.org/10.1557/PROC-240-467 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 240 1991 1 01 08 467-472 |
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10.1557/PROC-240-467 doi (DE-627)SPR041746910 (SPR)PROC-240-467-e DE-627 ger DE-627 rakwb eng 670 ASE Lee, H. S. verfasserin aut Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. Han, W. Y. verfasserin aut Lu, Y. verfasserin aut Cole, M. W. verfasserin aut Lareau, R. T. verfasserin aut Casas, L. verfasserin aut Thompson, R. J. verfasserin aut De Anni, A. verfasserin aut Jones, K. A. verfasserin aut Yang, L. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 240(1991), 1 vom: 01. Aug., Seite 467-472 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:240 year:1991 number:1 day:01 month:08 pages:467-472 https://dx.doi.org/10.1557/PROC-240-467 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 240 1991 1 01 08 467-472 |
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10.1557/PROC-240-467 doi (DE-627)SPR041746910 (SPR)PROC-240-467-e DE-627 ger DE-627 rakwb eng 670 ASE Lee, H. S. verfasserin aut Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. Han, W. Y. verfasserin aut Lu, Y. verfasserin aut Cole, M. W. verfasserin aut Lareau, R. T. verfasserin aut Casas, L. verfasserin aut Thompson, R. J. verfasserin aut De Anni, A. verfasserin aut Jones, K. A. verfasserin aut Yang, L. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 240(1991), 1 vom: 01. Aug., Seite 467-472 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:240 year:1991 number:1 day:01 month:08 pages:467-472 https://dx.doi.org/10.1557/PROC-240-467 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 240 1991 1 01 08 467-472 |
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10.1557/PROC-240-467 doi (DE-627)SPR041746910 (SPR)PROC-240-467-e DE-627 ger DE-627 rakwb eng 670 ASE Lee, H. S. verfasserin aut Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. Han, W. Y. verfasserin aut Lu, Y. verfasserin aut Cole, M. W. verfasserin aut Lareau, R. T. verfasserin aut Casas, L. verfasserin aut Thompson, R. J. verfasserin aut De Anni, A. verfasserin aut Jones, K. A. verfasserin aut Yang, L. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 240(1991), 1 vom: 01. Aug., Seite 467-472 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:240 year:1991 number:1 day:01 month:08 pages:467-472 https://dx.doi.org/10.1557/PROC-240-467 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 240 1991 1 01 08 467-472 |
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10.1557/PROC-240-467 doi (DE-627)SPR041746910 (SPR)PROC-240-467-e DE-627 ger DE-627 rakwb eng 670 ASE Lee, H. S. verfasserin aut Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. Han, W. Y. verfasserin aut Lu, Y. verfasserin aut Cole, M. W. verfasserin aut Lareau, R. T. verfasserin aut Casas, L. verfasserin aut Thompson, R. J. verfasserin aut De Anni, A. verfasserin aut Jones, K. A. verfasserin aut Yang, L. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 240(1991), 1 vom: 01. Aug., Seite 467-472 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:240 year:1991 number:1 day:01 month:08 pages:467-472 https://dx.doi.org/10.1557/PROC-240-467 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 240 1991 1 01 08 467-472 |
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Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. |
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Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. |
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Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041746910</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051753.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201103s1991 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-240-467</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041746910</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-240-467-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, H. S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ohmic Contacts to Heavily Carbon-Doped $ p^{+} $-GaAs Using Ti/Si/Pd</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1991</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Silicide formation was observed in the Pd/Si layers over the temperature range 400–700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × $ 10^{-6} %$ Ωcm^{2} $ were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Han, W. Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lu, Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cole, M. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lareau, R. 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W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">240(1991), 1 vom: 01. Aug., Seite 467-472</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:240</subfield><subfield code="g">year:1991</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:467-472</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-240-467</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">240</subfield><subfield code="j">1991</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">467-472</subfield></datafield></record></collection>
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