Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids
Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ramesham, R. [verfasserIn] Ellis, C. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1991 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 242(1991), 1 vom: 01. Aug., Seite 69-77 |
|---|---|
| Übergeordnetes Werk: |
volume:242 ; year:1991 ; number:1 ; day:01 ; month:08 ; pages:69-77 |
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| DOI / URN: |
10.1557/PROC-242-69 |
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| 520 | |a Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. | ||
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10.1557/PROC-242-69 doi (DE-627)SPR041748506 (SPR)PROC-242-69-e DE-627 ger DE-627 rakwb eng 670 ASE Ramesham, R. verfasserin aut Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 242(1991), 1 vom: 01. Aug., Seite 69-77 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:242 year:1991 number:1 day:01 month:08 pages:69-77 https://dx.doi.org/10.1557/PROC-242-69 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 242 1991 1 01 08 69-77 |
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10.1557/PROC-242-69 doi (DE-627)SPR041748506 (SPR)PROC-242-69-e DE-627 ger DE-627 rakwb eng 670 ASE Ramesham, R. verfasserin aut Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 242(1991), 1 vom: 01. Aug., Seite 69-77 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:242 year:1991 number:1 day:01 month:08 pages:69-77 https://dx.doi.org/10.1557/PROC-242-69 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 242 1991 1 01 08 69-77 |
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10.1557/PROC-242-69 doi (DE-627)SPR041748506 (SPR)PROC-242-69-e DE-627 ger DE-627 rakwb eng 670 ASE Ramesham, R. verfasserin aut Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 242(1991), 1 vom: 01. Aug., Seite 69-77 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:242 year:1991 number:1 day:01 month:08 pages:69-77 https://dx.doi.org/10.1557/PROC-242-69 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 242 1991 1 01 08 69-77 |
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10.1557/PROC-242-69 doi (DE-627)SPR041748506 (SPR)PROC-242-69-e DE-627 ger DE-627 rakwb eng 670 ASE Ramesham, R. verfasserin aut Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 242(1991), 1 vom: 01. Aug., Seite 69-77 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:242 year:1991 number:1 day:01 month:08 pages:69-77 https://dx.doi.org/10.1557/PROC-242-69 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 242 1991 1 01 08 69-77 |
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10.1557/PROC-242-69 doi (DE-627)SPR041748506 (SPR)PROC-242-69-e DE-627 ger DE-627 rakwb eng 670 ASE Ramesham, R. verfasserin aut Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. Ellis, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 242(1991), 1 vom: 01. Aug., Seite 69-77 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:242 year:1991 number:1 day:01 month:08 pages:69-77 https://dx.doi.org/10.1557/PROC-242-69 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 242 1991 1 01 08 69-77 |
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Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. |
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Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. |
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Abstract Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surrounded by thermally grown silicon dioxide to a high pressure microwave plasma-assisted chemical vapor deposition (HPMACVD) process where the reactant feed gases are methane and hydrogen. Nucleation rate of diamond is very high on the sharp edge of a silicon mesa structure or an apex of a silicon pyramid as anticipated. Selective growth of diamond particles on the apex of silicon pyramids fabricated using various approaches were analyzed by scanning electron microscopy. |
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