In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing
Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Im, J. [verfasserIn] Auciello, O. [verfasserIn] Krauss, A. R. [verfasserIn] Gruen, D. M. [verfasserIn] Chang, R. P. H. [verfasserIn] Kim, S. H. [verfasserIn] Kingon, A. I. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 541(1998), 1 vom: Dez., Seite 287-292 |
|---|---|
| Übergeordnetes Werk: |
volume:541 ; year:1998 ; number:1 ; month:12 ; pages:287-292 |
| Links: |
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| DOI / URN: |
10.1557/PROC-541-287 |
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SPR041752716 |
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| 245 | 1 | 0 | |a In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing |
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| 520 | |a Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. | ||
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| 700 | 1 | |a Chang, R. P. H. |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, S. H. |e verfasserin |4 aut | |
| 700 | 1 | |a Kingon, A. I. |e verfasserin |4 aut | |
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10.1557/PROC-541-287 doi (DE-627)SPR041752716 (SPR)PROC-541-287-e DE-627 ger DE-627 rakwb eng 670 ASE Im, J. verfasserin aut In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. Auciello, O. verfasserin aut Krauss, A. R. verfasserin aut Gruen, D. M. verfasserin aut Chang, R. P. H. verfasserin aut Kim, S. H. verfasserin aut Kingon, A. I. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 541(1998), 1 vom: Dez., Seite 287-292 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:541 year:1998 number:1 month:12 pages:287-292 https://dx.doi.org/10.1557/PROC-541-287 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 541 1998 1 12 287-292 |
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10.1557/PROC-541-287 doi (DE-627)SPR041752716 (SPR)PROC-541-287-e DE-627 ger DE-627 rakwb eng 670 ASE Im, J. verfasserin aut In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. Auciello, O. verfasserin aut Krauss, A. R. verfasserin aut Gruen, D. M. verfasserin aut Chang, R. P. H. verfasserin aut Kim, S. H. verfasserin aut Kingon, A. I. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 541(1998), 1 vom: Dez., Seite 287-292 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:541 year:1998 number:1 month:12 pages:287-292 https://dx.doi.org/10.1557/PROC-541-287 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 541 1998 1 12 287-292 |
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10.1557/PROC-541-287 doi (DE-627)SPR041752716 (SPR)PROC-541-287-e DE-627 ger DE-627 rakwb eng 670 ASE Im, J. verfasserin aut In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. Auciello, O. verfasserin aut Krauss, A. R. verfasserin aut Gruen, D. M. verfasserin aut Chang, R. P. H. verfasserin aut Kim, S. H. verfasserin aut Kingon, A. I. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 541(1998), 1 vom: Dez., Seite 287-292 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:541 year:1998 number:1 month:12 pages:287-292 https://dx.doi.org/10.1557/PROC-541-287 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 541 1998 1 12 287-292 |
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10.1557/PROC-541-287 doi (DE-627)SPR041752716 (SPR)PROC-541-287-e DE-627 ger DE-627 rakwb eng 670 ASE Im, J. verfasserin aut In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. Auciello, O. verfasserin aut Krauss, A. R. verfasserin aut Gruen, D. M. verfasserin aut Chang, R. P. H. verfasserin aut Kim, S. H. verfasserin aut Kingon, A. I. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 541(1998), 1 vom: Dez., Seite 287-292 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:541 year:1998 number:1 month:12 pages:287-292 https://dx.doi.org/10.1557/PROC-541-287 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 541 1998 1 12 287-292 |
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10.1557/PROC-541-287 doi (DE-627)SPR041752716 (SPR)PROC-541-287-e DE-627 ger DE-627 rakwb eng 670 ASE Im, J. verfasserin aut In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. Auciello, O. verfasserin aut Krauss, A. R. verfasserin aut Gruen, D. M. verfasserin aut Chang, R. P. H. verfasserin aut Kim, S. H. verfasserin aut Kingon, A. I. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 541(1998), 1 vom: Dez., Seite 287-292 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:541 year:1998 number:1 month:12 pages:287-292 https://dx.doi.org/10.1557/PROC-541-287 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 541 1998 1 12 287-292 |
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Elektronische Aufsätze |
| author-letter |
Im, J. |
| doi_str_mv |
10.1557/PROC-541-287 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
in situ mass spectroscopy of recoiled ion studies of degradation processes in $ srbi_{2} %$ ta_{2} %$ o_{9} $ thin films during hydrogen gas annealing |
| title_auth |
In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing |
| abstract |
Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. |
| abstractGer |
Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. |
| abstract_unstemmed |
Abstract It is known that the forming gas ($ N_{2} $-$ H_{2} $ mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ (SBT) ferroelectric capacitors due mainly to the interaction of $ H_{2} $ with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer. |
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| title_short |
In Situ Mass Spectroscopy of Recoiled Ion Studies of Degradation Processes in $ SrBi_{2} %$ Ta_{2} %$ O_{9} $ Thin Films During Hydrogen Gas Annealing |
| url |
https://dx.doi.org/10.1557/PROC-541-287 |
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| author2 |
Auciello, O. Krauss, A. R. Gruen, D. M. Chang, R. P. H. Kim, S. H. Kingon, A. I. |
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Auciello, O. Krauss, A. R. Gruen, D. M. Chang, R. P. H. Kim, S. H. Kingon, A. I. |
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57782046X |
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10.1557/PROC-541-287 |
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2024-07-03T23:30:01.588Z |
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7.402669 |