Effects of Additive Gas on $ SiO_{2} $ Etching
Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Miyakawa, Yasuhiro [verfasserIn] Hashimoto, Jun [verfasserIn] Ikegami, Naokatsu [verfasserIn] Kanamori, Jun [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 279(1992), 1 vom: 15. Aug., Seite 813-818 |
|---|---|
| Übergeordnetes Werk: |
volume:279 ; year:1992 ; number:1 ; day:15 ; month:08 ; pages:813-818 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-279-813 |
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SPR041799194 |
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| 520 | |a Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. | ||
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10.1557/PROC-279-813 doi (DE-627)SPR041799194 (SPR)PROC-279-813-e DE-627 ger DE-627 rakwb eng 670 ASE Miyakawa, Yasuhiro verfasserin aut Effects of Additive Gas on $ SiO_{2} $ Etching 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. Hashimoto, Jun verfasserin aut Ikegami, Naokatsu verfasserin aut Kanamori, Jun verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 279(1992), 1 vom: 15. Aug., Seite 813-818 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:279 year:1992 number:1 day:15 month:08 pages:813-818 https://dx.doi.org/10.1557/PROC-279-813 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 279 1992 1 15 08 813-818 |
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10.1557/PROC-279-813 doi (DE-627)SPR041799194 (SPR)PROC-279-813-e DE-627 ger DE-627 rakwb eng 670 ASE Miyakawa, Yasuhiro verfasserin aut Effects of Additive Gas on $ SiO_{2} $ Etching 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. Hashimoto, Jun verfasserin aut Ikegami, Naokatsu verfasserin aut Kanamori, Jun verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 279(1992), 1 vom: 15. Aug., Seite 813-818 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:279 year:1992 number:1 day:15 month:08 pages:813-818 https://dx.doi.org/10.1557/PROC-279-813 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 279 1992 1 15 08 813-818 |
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10.1557/PROC-279-813 doi (DE-627)SPR041799194 (SPR)PROC-279-813-e DE-627 ger DE-627 rakwb eng 670 ASE Miyakawa, Yasuhiro verfasserin aut Effects of Additive Gas on $ SiO_{2} $ Etching 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. Hashimoto, Jun verfasserin aut Ikegami, Naokatsu verfasserin aut Kanamori, Jun verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 279(1992), 1 vom: 15. Aug., Seite 813-818 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:279 year:1992 number:1 day:15 month:08 pages:813-818 https://dx.doi.org/10.1557/PROC-279-813 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 279 1992 1 15 08 813-818 |
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10.1557/PROC-279-813 doi (DE-627)SPR041799194 (SPR)PROC-279-813-e DE-627 ger DE-627 rakwb eng 670 ASE Miyakawa, Yasuhiro verfasserin aut Effects of Additive Gas on $ SiO_{2} $ Etching 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. Hashimoto, Jun verfasserin aut Ikegami, Naokatsu verfasserin aut Kanamori, Jun verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 279(1992), 1 vom: 15. Aug., Seite 813-818 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:279 year:1992 number:1 day:15 month:08 pages:813-818 https://dx.doi.org/10.1557/PROC-279-813 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 279 1992 1 15 08 813-818 |
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10.1557/PROC-279-813 doi (DE-627)SPR041799194 (SPR)PROC-279-813-e DE-627 ger DE-627 rakwb eng 670 ASE Miyakawa, Yasuhiro verfasserin aut Effects of Additive Gas on $ SiO_{2} $ Etching 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. Hashimoto, Jun verfasserin aut Ikegami, Naokatsu verfasserin aut Kanamori, Jun verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 279(1992), 1 vom: 15. Aug., Seite 813-818 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:279 year:1992 number:1 day:15 month:08 pages:813-818 https://dx.doi.org/10.1557/PROC-279-813 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 279 1992 1 15 08 813-818 |
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Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. |
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Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. |
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Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041799194</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051848.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201106s1992 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-279-813</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041799194</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-279-813-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Miyakawa, Yasuhiro</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of Additive Gas on $ SiO_{2} $ Etching</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Precise control of critical dimension(CD) loss (defined as the length of the top of contact hole minus the bottom of resist in this paper) and etched profile of contact holes is a key technology in the fabrication of Ultra Large Scaled Integrated Circuit(ULSI). In case of fine contact hole etching, small CD loss and vertical profile is essential. We have found out that $ N_{2} $ addition to Ar/$ CHF_{3} $/$ CF_{4} $ sharpens etched profile with CD loss kept small. And $ N_{2} $ addition also increases etch rate without a heavy deterioration of selectivity of $ SiO_{2} $ versus heavily doped n-type poly cry stall ine Si($ n^{+} $ poly Si). Mechanisms of changes in etching characteristics have been investigated and discussed with the emphasis on adlayer formed on etched surface.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hashimoto, Jun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ikegami, Naokatsu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kanamori, Jun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">279(1992), 1 vom: 15. 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