Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. Fo...
Ausführliche Beschreibung
Autor*in: |
Grynkewich, G. [verfasserIn] Åkerman, J. [verfasserIn] Brown, P. [verfasserIn] Butcher, B. [verfasserIn] Dave, R. W. [verfasserIn] DeHerrera, M. [verfasserIn] Durlam, M. [verfasserIn] Engel, B. N. [verfasserIn] Janesky, J. [verfasserIn] Pietambaram, S. [verfasserIn] Rizzo, N. D. [verfasserIn] Slaughter, J. M. [verfasserIn] Smith, K. [verfasserIn] Sun, J. J. [verfasserIn] Tehrani, S. [verfasserIn] |
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Sprache: |
Englisch |
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2004 |
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Enthalten in: MRS bulletin - Berlin : Springer, 1982, 29(2004), 11 vom: Nov., Seite 818-821 |
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Übergeordnetes Werk: |
volume:29 ; year:2004 ; number:11 ; month:11 ; pages:818-821 |
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DOI / URN: |
10.1557/mrs2004.234 |
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Katalog-ID: |
SPR041937198 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | SPR041937198 | ||
003 | DE-627 | ||
005 | 20220112051118.0 | ||
007 | cr uuu---uuuuu | ||
008 | 201113s2004 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1557/mrs2004.234 |2 doi | |
035 | |a (DE-627)SPR041937198 | ||
035 | |a (SPR)mrs2004.234-e | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 670 |q ASE |
084 | |a 51.00 |2 bkl | ||
100 | 1 | |a Grynkewich, G. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
264 | 1 | |c 2004 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a Computermedien |b c |2 rdamedia | ||
338 | |a Online-Ressource |b cr |2 rdacarrier | ||
520 | |a Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. | ||
650 | 4 | |a magnetic memory |7 (dpeaa)DE-He213 | |
650 | 4 | |a magnetic switching |7 (dpeaa)DE-He213 | |
650 | 4 | |a MRAM |7 (dpeaa)DE-He213 | |
650 | 4 | |a MTJ |7 (dpeaa)DE-He213 | |
650 | 4 | |a magnetic tunnel junctions |7 (dpeaa)DE-He213 | |
650 | 4 | |a nonvolatile memory |7 (dpeaa)DE-He213 | |
700 | 1 | |a Åkerman, J. |e verfasserin |4 aut | |
700 | 1 | |a Brown, P. |e verfasserin |4 aut | |
700 | 1 | |a Butcher, B. |e verfasserin |4 aut | |
700 | 1 | |a Dave, R. W. |e verfasserin |4 aut | |
700 | 1 | |a DeHerrera, M. |e verfasserin |4 aut | |
700 | 1 | |a Durlam, M. |e verfasserin |4 aut | |
700 | 1 | |a Engel, B. N. |e verfasserin |4 aut | |
700 | 1 | |a Janesky, J. |e verfasserin |4 aut | |
700 | 1 | |a Pietambaram, S. |e verfasserin |4 aut | |
700 | 1 | |a Rizzo, N. D. |e verfasserin |4 aut | |
700 | 1 | |a Slaughter, J. M. |e verfasserin |4 aut | |
700 | 1 | |a Smith, K. |e verfasserin |4 aut | |
700 | 1 | |a Sun, J. J. |e verfasserin |4 aut | |
700 | 1 | |a Tehrani, S. |e verfasserin |4 aut | |
773 | 0 | 8 | |i Enthalten in |t MRS bulletin |d Berlin : Springer, 1982 |g 29(2004), 11 vom: Nov., Seite 818-821 |w (DE-627)379081628 |w (DE-600)2136359-6 |x 1938-1425 |7 nnns |
773 | 1 | 8 | |g volume:29 |g year:2004 |g number:11 |g month:11 |g pages:818-821 |
856 | 4 | 0 | |u https://dx.doi.org/10.1557/mrs2004.234 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_SPRINGER | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_120 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_374 | ||
912 | |a GBV_ILN_702 | ||
912 | |a GBV_ILN_2190 | ||
912 | |a GBV_ILN_4126 | ||
936 | b | k | |a 51.00 |q ASE |
951 | |a AR | ||
952 | |d 29 |j 2004 |e 11 |c 11 |h 818-821 |
author_variant |
g g gg j å jå p b pb b b bb r w d rw rwd m d md m d md b n e bn bne j j jj s p sp n d r nd ndr j m s jm jms k s ks j j s jj jjs s t st |
---|---|
matchkey_str |
article:19381425:2004----::ovltlmgeoeitvrnoacsmmrbsdna |
hierarchy_sort_str |
2004 |
bklnumber |
51.00 |
publishDate |
2004 |
allfields |
10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
spelling |
10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
allfields_unstemmed |
10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
allfieldsGer |
10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
allfieldsSound |
10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
language |
English |
source |
Enthalten in MRS bulletin 29(2004), 11 vom: Nov., Seite 818-821 volume:29 year:2004 number:11 month:11 pages:818-821 |
sourceStr |
Enthalten in MRS bulletin 29(2004), 11 vom: Nov., Seite 818-821 volume:29 year:2004 number:11 month:11 pages:818-821 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
magnetic memory magnetic switching MRAM MTJ magnetic tunnel junctions nonvolatile memory |
dewey-raw |
670 |
isfreeaccess_bool |
false |
container_title |
MRS bulletin |
authorswithroles_txt_mv |
Grynkewich, G. @@aut@@ Åkerman, J. @@aut@@ Brown, P. @@aut@@ Butcher, B. @@aut@@ Dave, R. W. @@aut@@ DeHerrera, M. @@aut@@ Durlam, M. @@aut@@ Engel, B. N. @@aut@@ Janesky, J. @@aut@@ Pietambaram, S. @@aut@@ Rizzo, N. D. @@aut@@ Slaughter, J. M. @@aut@@ Smith, K. @@aut@@ Sun, J. J. @@aut@@ Tehrani, S. @@aut@@ |
publishDateDaySort_date |
2004-11-01T00:00:00Z |
hierarchy_top_id |
379081628 |
dewey-sort |
3670 |
id |
SPR041937198 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041937198</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051118.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201113s2004 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/mrs2004.234</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041937198</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)mrs2004.234-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grynkewich, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic memory</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic switching</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MRAM</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MTJ</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic tunnel junctions</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonvolatile memory</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Åkerman, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Butcher, B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dave, R. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">DeHerrera, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Durlam, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Engel, B. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Janesky, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pietambaram, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rizzo, N. D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slaughter, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smith, K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, J. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tehrani, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS bulletin</subfield><subfield code="d">Berlin : Springer, 1982</subfield><subfield code="g">29(2004), 11 vom: Nov., Seite 818-821</subfield><subfield code="w">(DE-627)379081628</subfield><subfield code="w">(DE-600)2136359-6</subfield><subfield code="x">1938-1425</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:818-821</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/mrs2004.234</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_374</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2004</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">818-821</subfield></datafield></record></collection>
|
author |
Grynkewich, G. |
spellingShingle |
Grynkewich, G. ddc 670 bkl 51.00 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
authorStr |
Grynkewich, G. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)379081628 |
format |
electronic Article |
dewey-ones |
670 - Manufacturing |
delete_txt_mv |
keep |
author_role |
aut aut aut aut aut aut aut aut aut aut aut aut aut aut aut |
collection |
springer |
remote_str |
true |
illustrated |
Not Illustrated |
issn |
1938-1425 |
topic_title |
670 ASE 51.00 bkl Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 |
topic |
ddc 670 bkl 51.00 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
topic_unstemmed |
ddc 670 bkl 51.00 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
topic_browse |
ddc 670 bkl 51.00 misc magnetic memory misc magnetic switching misc MRAM misc MTJ misc magnetic tunnel junctions misc nonvolatile memory |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
cr |
hierarchy_parent_title |
MRS bulletin |
hierarchy_parent_id |
379081628 |
dewey-tens |
670 - Manufacturing |
hierarchy_top_title |
MRS bulletin |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)379081628 (DE-600)2136359-6 |
title |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
ctrlnum |
(DE-627)SPR041937198 (SPR)mrs2004.234-e |
title_full |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
author_sort |
Grynkewich, G. |
journal |
MRS bulletin |
journalStr |
MRS bulletin |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
600 - Technology |
recordtype |
marc |
publishDateSort |
2004 |
contenttype_str_mv |
txt |
container_start_page |
818 |
author_browse |
Grynkewich, G. Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
container_volume |
29 |
class |
670 ASE 51.00 bkl |
format_se |
Elektronische Aufsätze |
author-letter |
Grynkewich, G. |
doi_str_mv |
10.1557/mrs2004.234 |
dewey-full |
670 |
author2-role |
verfasserin |
title_sort |
nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions |
title_auth |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
abstract |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
abstractGer |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
abstract_unstemmed |
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 |
container_issue |
11 |
title_short |
Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
url |
https://dx.doi.org/10.1557/mrs2004.234 |
remote_bool |
true |
author2 |
Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
author2Str |
Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
ppnlink |
379081628 |
mediatype_str_mv |
c |
isOA_txt |
false |
hochschulschrift_bool |
false |
doi_str |
10.1557/mrs2004.234 |
up_date |
2024-07-04T00:12:16.193Z |
_version_ |
1803605179046559744 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041937198</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051118.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201113s2004 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/mrs2004.234</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041937198</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)mrs2004.234-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grynkewich, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2004</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic memory</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic switching</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MRAM</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MTJ</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic tunnel junctions</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonvolatile memory</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Åkerman, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Butcher, B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dave, R. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">DeHerrera, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Durlam, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Engel, B. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Janesky, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pietambaram, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rizzo, N. D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slaughter, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Smith, K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sun, J. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tehrani, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS bulletin</subfield><subfield code="d">Berlin : Springer, 1982</subfield><subfield code="g">29(2004), 11 vom: Nov., Seite 818-821</subfield><subfield code="w">(DE-627)379081628</subfield><subfield code="w">(DE-600)2136359-6</subfield><subfield code="x">1938-1425</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2004</subfield><subfield code="g">number:11</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:818-821</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/mrs2004.234</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_374</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2004</subfield><subfield code="e">11</subfield><subfield code="c">11</subfield><subfield code="h">818-821</subfield></datafield></record></collection>
|
score |
7.3982754 |