Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions
Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. Fo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Grynkewich, G. [verfasserIn] Åkerman, J. [verfasserIn] Brown, P. [verfasserIn] Butcher, B. [verfasserIn] Dave, R. W. [verfasserIn] DeHerrera, M. [verfasserIn] Durlam, M. [verfasserIn] Engel, B. N. [verfasserIn] Janesky, J. [verfasserIn] Pietambaram, S. [verfasserIn] Rizzo, N. D. [verfasserIn] Slaughter, J. M. [verfasserIn] Smith, K. [verfasserIn] Sun, J. J. [verfasserIn] Tehrani, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2004 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: MRS bulletin - Berlin : Springer, 1982, 29(2004), 11 vom: Nov., Seite 818-821 |
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| Übergeordnetes Werk: |
volume:29 ; year:2004 ; number:11 ; month:11 ; pages:818-821 |
| Links: |
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| DOI / URN: |
10.1557/mrs2004.234 |
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| Katalog-ID: |
SPR041937198 |
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| 520 | |a Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. | ||
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10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
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10.1557/mrs2004.234 doi (DE-627)SPR041937198 (SPR)mrs2004.234-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Grynkewich, G. verfasserin aut Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. magnetic memory (dpeaa)DE-He213 magnetic switching (dpeaa)DE-He213 MRAM (dpeaa)DE-He213 MTJ (dpeaa)DE-He213 magnetic tunnel junctions (dpeaa)DE-He213 nonvolatile memory (dpeaa)DE-He213 Åkerman, J. verfasserin aut Brown, P. verfasserin aut Butcher, B. verfasserin aut Dave, R. W. verfasserin aut DeHerrera, M. verfasserin aut Durlam, M. verfasserin aut Engel, B. N. verfasserin aut Janesky, J. verfasserin aut Pietambaram, S. verfasserin aut Rizzo, N. D. verfasserin aut Slaughter, J. M. verfasserin aut Smith, K. verfasserin aut Sun, J. J. verfasserin aut Tehrani, S. verfasserin aut Enthalten in MRS bulletin Berlin : Springer, 1982 29(2004), 11 vom: Nov., Seite 818-821 (DE-627)379081628 (DE-600)2136359-6 1938-1425 nnns volume:29 year:2004 number:11 month:11 pages:818-821 https://dx.doi.org/10.1557/mrs2004.234 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_24 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2190 GBV_ILN_4126 51.00 ASE AR 29 2004 11 11 818-821 |
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Grynkewich, G. Åkerman, J. Brown, P. Butcher, B. Dave, R. W. DeHerrera, M. Durlam, M. Engel, B. N. Janesky, J. Pietambaram, S. Rizzo, N. D. Slaughter, J. M. Smith, K. Sun, J. J. Tehrani, S. |
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nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions |
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Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
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Abstract Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not found in other memory technologies. For example, MRAM is nonvolatile, has unlimited read and write endurance, and is capable of high-speed read and write operations. In this article, we will describe the fundamentals of an MTJ-based MRAM as well as recent important technology developments in the areas of magnetic materials and memory cell architecture. In addition, we will compare the present and future capabilities of MRAM to those of existing memory technologies such as static RAM and flash memory. |
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