Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources
Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is empl...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gaughan, K. [verfasserIn] Hershgold, S. [verfasserIn] Viner, J.M. [verfasserIn] Taylor, P.C. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1991 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 219(1991), 1 vom: 15. Jan., Seite 697-702 |
|---|---|
| Übergeordnetes Werk: |
volume:219 ; year:1991 ; number:1 ; day:15 ; month:01 ; pages:697-702 |
| Links: |
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| DOI / URN: |
10.1557/PROC-219-697 |
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| 520 | |a Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. | ||
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10.1557/PROC-219-697 doi (DE-627)SPR041958616 (SPR)PROC-219-697-e DE-627 ger DE-627 rakwb eng 670 ASE Gaughan, K. verfasserin aut Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. Hershgold, S. verfasserin aut Viner, J.M. verfasserin aut Taylor, P.C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 219(1991), 1 vom: 15. Jan., Seite 697-702 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:219 year:1991 number:1 day:15 month:01 pages:697-702 https://dx.doi.org/10.1557/PROC-219-697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 219 1991 1 15 01 697-702 |
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10.1557/PROC-219-697 doi (DE-627)SPR041958616 (SPR)PROC-219-697-e DE-627 ger DE-627 rakwb eng 670 ASE Gaughan, K. verfasserin aut Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. Hershgold, S. verfasserin aut Viner, J.M. verfasserin aut Taylor, P.C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 219(1991), 1 vom: 15. Jan., Seite 697-702 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:219 year:1991 number:1 day:15 month:01 pages:697-702 https://dx.doi.org/10.1557/PROC-219-697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 219 1991 1 15 01 697-702 |
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10.1557/PROC-219-697 doi (DE-627)SPR041958616 (SPR)PROC-219-697-e DE-627 ger DE-627 rakwb eng 670 ASE Gaughan, K. verfasserin aut Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. Hershgold, S. verfasserin aut Viner, J.M. verfasserin aut Taylor, P.C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 219(1991), 1 vom: 15. Jan., Seite 697-702 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:219 year:1991 number:1 day:15 month:01 pages:697-702 https://dx.doi.org/10.1557/PROC-219-697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 219 1991 1 15 01 697-702 |
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10.1557/PROC-219-697 doi (DE-627)SPR041958616 (SPR)PROC-219-697-e DE-627 ger DE-627 rakwb eng 670 ASE Gaughan, K. verfasserin aut Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. Hershgold, S. verfasserin aut Viner, J.M. verfasserin aut Taylor, P.C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 219(1991), 1 vom: 15. Jan., Seite 697-702 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:219 year:1991 number:1 day:15 month:01 pages:697-702 https://dx.doi.org/10.1557/PROC-219-697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 219 1991 1 15 01 697-702 |
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10.1557/PROC-219-697 doi (DE-627)SPR041958616 (SPR)PROC-219-697-e DE-627 ger DE-627 rakwb eng 670 ASE Gaughan, K. verfasserin aut Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources 1991 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. Hershgold, S. verfasserin aut Viner, J.M. verfasserin aut Taylor, P.C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 219(1991), 1 vom: 15. Jan., Seite 697-702 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:219 year:1991 number:1 day:15 month:01 pages:697-702 https://dx.doi.org/10.1557/PROC-219-697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 219 1991 1 15 01 697-702 |
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Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. |
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Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. |
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Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041958616</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051723.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201114s1991 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-219-697</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041958616</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-219-697-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gaughan, K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1991</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap ($ E_{04} $ ≈ 3 eV) a-SiC:H.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hershgold, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Viner, J.M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Taylor, P.C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">219(1991), 1 vom: 15. Jan., Seite 697-702</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:219</subfield><subfield code="g">year:1991</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:697-702</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-219-697</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">219</subfield><subfield code="j">1991</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">01</subfield><subfield code="h">697-702</subfield></datafield></record></collection>
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