Hydrogenated Amorphous Silicon Alloyed with Selenium
Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentratio...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chen, Shenlin [verfasserIn] Taylor, P. C. [verfasserIn] Viner, J. M. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 507(1998), 1 vom: 15. Apr., Seite 459-464 |
|---|---|
| Übergeordnetes Werk: |
volume:507 ; year:1998 ; number:1 ; day:15 ; month:04 ; pages:459-464 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-507-459 |
|---|
| Katalog-ID: |
SPR041983327 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR041983327 | ||
| 003 | DE-627 | ||
| 005 | 20220112052546.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201115s1998 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-507-459 |2 doi | |
| 035 | |a (DE-627)SPR041983327 | ||
| 035 | |a (SPR)PROC-507-459-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Chen, Shenlin |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Hydrogenated Amorphous Silicon Alloyed with Selenium |
| 264 | 1 | |c 1998 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. | ||
| 700 | 1 | |a Taylor, P. C. |e verfasserin |4 aut | |
| 700 | 1 | |a Viner, J. M. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 507(1998), 1 vom: 15. Apr., Seite 459-464 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:507 |g year:1998 |g number:1 |g day:15 |g month:04 |g pages:459-464 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-507-459 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 507 |j 1998 |e 1 |b 15 |c 04 |h 459-464 | ||
| author_variant |
s c sc p c t pc pct j m v jm jmv |
|---|---|
| matchkey_str |
article:19464274:1998----::yrgntdmrhuslcnlo |
| hierarchy_sort_str |
1998 |
| publishDate |
1998 |
| allfields |
10.1557/PROC-507-459 doi (DE-627)SPR041983327 (SPR)PROC-507-459-e DE-627 ger DE-627 rakwb eng 670 ASE Chen, Shenlin verfasserin aut Hydrogenated Amorphous Silicon Alloyed with Selenium 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. Taylor, P. C. verfasserin aut Viner, J. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 459-464 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:459-464 https://dx.doi.org/10.1557/PROC-507-459 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 459-464 |
| spelling |
10.1557/PROC-507-459 doi (DE-627)SPR041983327 (SPR)PROC-507-459-e DE-627 ger DE-627 rakwb eng 670 ASE Chen, Shenlin verfasserin aut Hydrogenated Amorphous Silicon Alloyed with Selenium 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. Taylor, P. C. verfasserin aut Viner, J. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 459-464 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:459-464 https://dx.doi.org/10.1557/PROC-507-459 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 459-464 |
| allfields_unstemmed |
10.1557/PROC-507-459 doi (DE-627)SPR041983327 (SPR)PROC-507-459-e DE-627 ger DE-627 rakwb eng 670 ASE Chen, Shenlin verfasserin aut Hydrogenated Amorphous Silicon Alloyed with Selenium 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. Taylor, P. C. verfasserin aut Viner, J. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 459-464 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:459-464 https://dx.doi.org/10.1557/PROC-507-459 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 459-464 |
| allfieldsGer |
10.1557/PROC-507-459 doi (DE-627)SPR041983327 (SPR)PROC-507-459-e DE-627 ger DE-627 rakwb eng 670 ASE Chen, Shenlin verfasserin aut Hydrogenated Amorphous Silicon Alloyed with Selenium 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. Taylor, P. C. verfasserin aut Viner, J. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 459-464 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:459-464 https://dx.doi.org/10.1557/PROC-507-459 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 459-464 |
| allfieldsSound |
10.1557/PROC-507-459 doi (DE-627)SPR041983327 (SPR)PROC-507-459-e DE-627 ger DE-627 rakwb eng 670 ASE Chen, Shenlin verfasserin aut Hydrogenated Amorphous Silicon Alloyed with Selenium 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. Taylor, P. C. verfasserin aut Viner, J. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 459-464 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:459-464 https://dx.doi.org/10.1557/PROC-507-459 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 459-464 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 507(1998), 1 vom: 15. Apr., Seite 459-464 volume:507 year:1998 number:1 day:15 month:04 pages:459-464 |
| sourceStr |
Enthalten in MRS online proceedings library 507(1998), 1 vom: 15. Apr., Seite 459-464 volume:507 year:1998 number:1 day:15 month:04 pages:459-464 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Chen, Shenlin @@aut@@ Taylor, P. C. @@aut@@ Viner, J. M. @@aut@@ |
| publishDateDaySort_date |
1998-04-15T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR041983327 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041983327</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052546.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201115s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-507-459</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041983327</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-507-459-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chen, Shenlin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hydrogenated Amorphous Silicon Alloyed with Selenium</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Taylor, P. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Viner, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">507(1998), 1 vom: 15. Apr., Seite 459-464</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:507</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:459-464</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-507-459</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">507</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">04</subfield><subfield code="h">459-464</subfield></datafield></record></collection>
|
| author |
Chen, Shenlin |
| spellingShingle |
Chen, Shenlin ddc 670 Hydrogenated Amorphous Silicon Alloyed with Selenium |
| authorStr |
Chen, Shenlin |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Hydrogenated Amorphous Silicon Alloyed with Selenium |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Hydrogenated Amorphous Silicon Alloyed with Selenium |
| ctrlnum |
(DE-627)SPR041983327 (SPR)PROC-507-459-e |
| title_full |
Hydrogenated Amorphous Silicon Alloyed with Selenium |
| author_sort |
Chen, Shenlin |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1998 |
| contenttype_str_mv |
txt |
| container_start_page |
459 |
| author_browse |
Chen, Shenlin Taylor, P. C. Viner, J. M. |
| container_volume |
507 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Chen, Shenlin |
| doi_str_mv |
10.1557/PROC-507-459 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
hydrogenated amorphous silicon alloyed with selenium |
| title_auth |
Hydrogenated Amorphous Silicon Alloyed with Selenium |
| abstract |
Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. |
| abstractGer |
Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. |
| abstract_unstemmed |
Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Hydrogenated Amorphous Silicon Alloyed with Selenium |
| url |
https://dx.doi.org/10.1557/PROC-507-459 |
| remote_bool |
true |
| author2 |
Taylor, P. C. Viner, J. M. |
| author2Str |
Taylor, P. C. Viner, J. M. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-507-459 |
| up_date |
2024-07-04T00:21:50.263Z |
| _version_ |
1803605781002584064 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041983327</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052546.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201115s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-507-459</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041983327</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-507-459-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chen, Shenlin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hydrogenated Amorphous Silicon Alloyed with Selenium</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Hydrogenated amorphous silicon alloyed with selenium has been made by plasma enhanced chemical vapor deposition (PECVD). The activation energy for electrical conduction is essentially unchanged for selenium concentrations < 1 at.%. The photo conductivity changes for selenium concentrations > 0.5 at. %. Photothermal deflection spectroscopy (PDS) and electron spin resonance (ESR), respectively, show that the width of the valence band tail states and the density of neutral silicon dangling bonds also change for selenium concentrations > 0.5 at. %.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Taylor, P. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Viner, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">507(1998), 1 vom: 15. Apr., Seite 459-464</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:507</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:459-464</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-507-459</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">507</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">04</subfield><subfield code="h">459-464</subfield></datafield></record></collection>
|
| score |
7.3998127 |