Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique
Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and h...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ferreira, I. [verfasserIn] Águas, H. [verfasserIn] Mendes, L. [verfasserIn] Fernandes, F. [verfasserIn] Fortunato, E. [verfasserIn] Martins, R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1998 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 507(1998), 1 vom: 15. Apr., Seite 607-612 |
|---|---|
| Übergeordnetes Werk: |
volume:507 ; year:1998 ; number:1 ; day:15 ; month:04 ; pages:607-612 |
| Links: |
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| DOI / URN: |
10.1557/PROC-507-607 |
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SPR041983580 |
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| 520 | |a Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. | ||
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10.1557/PROC-507-607 doi (DE-627)SPR041983580 (SPR)PROC-507-607-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. Águas, H. verfasserin aut Mendes, L. verfasserin aut Fernandes, F. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 607-612 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:607-612 https://dx.doi.org/10.1557/PROC-507-607 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 607-612 |
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10.1557/PROC-507-607 doi (DE-627)SPR041983580 (SPR)PROC-507-607-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. Águas, H. verfasserin aut Mendes, L. verfasserin aut Fernandes, F. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 607-612 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:607-612 https://dx.doi.org/10.1557/PROC-507-607 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 607-612 |
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10.1557/PROC-507-607 doi (DE-627)SPR041983580 (SPR)PROC-507-607-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. Águas, H. verfasserin aut Mendes, L. verfasserin aut Fernandes, F. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 607-612 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:607-612 https://dx.doi.org/10.1557/PROC-507-607 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 607-612 |
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10.1557/PROC-507-607 doi (DE-627)SPR041983580 (SPR)PROC-507-607-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. Águas, H. verfasserin aut Mendes, L. verfasserin aut Fernandes, F. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 607-612 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:607-612 https://dx.doi.org/10.1557/PROC-507-607 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 607-612 |
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10.1557/PROC-507-607 doi (DE-627)SPR041983580 (SPR)PROC-507-607-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique 1998 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. Águas, H. verfasserin aut Mendes, L. verfasserin aut Fernandes, F. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 507(1998), 1 vom: 15. Apr., Seite 607-612 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:507 year:1998 number:1 day:15 month:04 pages:607-612 https://dx.doi.org/10.1557/PROC-507-607 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 507 1998 1 15 04 607-612 |
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Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. |
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Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. |
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Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041983580</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052545.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201115s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-507-607</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041983580</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-507-607-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ferreira, I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract This work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≈ 4 $ mWcm^{-2} $) and with filament temperatures around 1850 °K have dark conductivities below $ 10^{-10} %$ Scm^{-1} $, optical gaps of about 1.5 eV and photo-sensitivities above $ 10^{5} $, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about $ 10^{-2} %$ Scm^{-1} $.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Águas, H.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mendes, L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fernandes, F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fortunato, E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Martins, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">507(1998), 1 vom: 15. Apr., Seite 607-612</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:507</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:607-612</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-507-607</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">507</subfield><subfield code="j">1998</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">04</subfield><subfield code="h">607-612</subfield></datafield></record></collection>
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