Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System
Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crysta...
Ausführliche Beschreibung
Autor*in: |
Viswanathan, Sriram [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
1993 |
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Anmerkung: |
© The Materials Research Society 1993 |
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Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 308(1993), 1 vom: 21. Okt., Seite 659-663 |
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Übergeordnetes Werk: |
volume:308 ; year:1993 ; number:1 ; day:21 ; month:10 ; pages:659-663 |
Links: |
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DOI / URN: |
10.1557/PROC-308-659 |
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SPR041995805 |
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520 | |a Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. | ||
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10.1557/PROC-308-659 doi (DE-627)SPR041995805 (SPR)PROC-308-659-e DE-627 ger DE-627 rakwb eng Viswanathan, Sriram verfasserin aut Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 1993 Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. Kohlstedt, David L. aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 308(1993), 1 vom: 21. Okt., Seite 659-663 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:308 year:1993 number:1 day:21 month:10 pages:659-663 https://dx.doi.org/10.1557/PROC-308-659 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 308 1993 1 21 10 659-663 |
spelling |
10.1557/PROC-308-659 doi (DE-627)SPR041995805 (SPR)PROC-308-659-e DE-627 ger DE-627 rakwb eng Viswanathan, Sriram verfasserin aut Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 1993 Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. Kohlstedt, David L. aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 308(1993), 1 vom: 21. Okt., Seite 659-663 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:308 year:1993 number:1 day:21 month:10 pages:659-663 https://dx.doi.org/10.1557/PROC-308-659 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 308 1993 1 21 10 659-663 |
allfields_unstemmed |
10.1557/PROC-308-659 doi (DE-627)SPR041995805 (SPR)PROC-308-659-e DE-627 ger DE-627 rakwb eng Viswanathan, Sriram verfasserin aut Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 1993 Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. Kohlstedt, David L. aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 308(1993), 1 vom: 21. Okt., Seite 659-663 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:308 year:1993 number:1 day:21 month:10 pages:659-663 https://dx.doi.org/10.1557/PROC-308-659 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 308 1993 1 21 10 659-663 |
allfieldsGer |
10.1557/PROC-308-659 doi (DE-627)SPR041995805 (SPR)PROC-308-659-e DE-627 ger DE-627 rakwb eng Viswanathan, Sriram verfasserin aut Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 1993 Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. Kohlstedt, David L. aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 308(1993), 1 vom: 21. Okt., Seite 659-663 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:308 year:1993 number:1 day:21 month:10 pages:659-663 https://dx.doi.org/10.1557/PROC-308-659 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 308 1993 1 21 10 659-663 |
allfieldsSound |
10.1557/PROC-308-659 doi (DE-627)SPR041995805 (SPR)PROC-308-659-e DE-627 ger DE-627 rakwb eng Viswanathan, Sriram verfasserin aut Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Materials Research Society 1993 Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. Kohlstedt, David L. aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 308(1993), 1 vom: 21. Okt., Seite 659-663 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:308 year:1993 number:1 day:21 month:10 pages:659-663 https://dx.doi.org/10.1557/PROC-308-659 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 308 1993 1 21 10 659-663 |
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effect of heat treatment on adhesion in the cr/$ al_{2} %$ o_{3} $ system |
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Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System |
abstract |
Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. © The Materials Research Society 1993 |
abstractGer |
Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. © The Materials Research Society 1993 |
abstract_unstemmed |
Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C. © The Materials Research Society 1993 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR041995805</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230509115321.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201116s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-308-659</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR041995805</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-308-659-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Viswanathan, Sriram</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of Heat Treatment on Adhesion in the Cr/$ Al_{2} %$ O_{3} $ System</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Materials Research Society 1993</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Continuous microscratch experiments have been carried out to investigate the effect of various heat treatments on adhesion in the Cr/$ Al_{2} %$ O_{3} $ system. After samples were prepared by vapor depositing 0.32 μm thick Cr films on %$\left( {1\bar 102} \right)%$ surfaces of single crystal sapphire substrates, they were annealed at different temperatures at controlled oxygen partial pressures. In the subsequent continuous microscratch tests, a conical diamond indenter with a 1 μm tip radius was driven simultaneously into and across the sample until a load drop occurred. Optical and scanning electron microscopy observations demonstrate that a portion of the Cr film delaminated from the $ A1_{2} %$ O_{3} $ substrate at that point. The interfacial strain energy release rate was calculated from the load at failure combined with the size and geometry of the delaminated region. The work of adhesion was found to decrease dramatically on annealing in an $ H_{2} $-Ar mixture at 250°C.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kohlstedt, David L.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">308(1993), 1 vom: 21. Okt., Seite 659-663</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:308</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1</subfield><subfield code="g">day:21</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:659-663</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-308-659</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">308</subfield><subfield code="j">1993</subfield><subfield code="e">1</subfield><subfield code="b">21</subfield><subfield code="c">10</subfield><subfield code="h">659-663</subfield></datafield></record></collection>
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