Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping

Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different o...
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Autor*in:	Jianxiu, Su [verfasserIn] Rui, Xu [verfasserIn] Yipu, Wang [verfasserIn] Jiejing, Li [verfasserIn] Haixu, Liu [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2020

Schlagwörter:	6H–SiC single-crystal Lapping paste Oxidant Abrasive Material removal rate

Übergeordnetes Werk:	Enthalten in: Journal of the Institution of Engineers (India) - [New Delhi] : Springer India, 2012, 101(2020), 2 vom: 06. Juni, Seite 141-148
Übergeordnetes Werk:	volume:101 ; year:2020 ; number:2 ; day:06 ; month:06 ; pages:141-148

Links:	Volltext

DOI / URN:	10.1007/s40034-020-00167-0

Katalog-ID:	SPR042081912

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520			\|a Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives.
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700	1		\|a Haixu, Liu \|e verfasserin \|4 aut
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matchkey_str	article:22502491:2020----::tdolpigato6scigersasbtaenrbcei
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allfields	10.1007/s40034-020-00167-0 doi (DE-627)SPR042081912 (SPR)s40034-020-00167-0-e DE-627 ger DE-627 rakwb eng 620 690 ASE Jianxiu, Su verfasserin aut Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives. 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213 Rui, Xu verfasserin aut Yipu, Wang verfasserin aut Jiejing, Li verfasserin aut Haixu, Liu verfasserin aut Enthalten in Journal of the Institution of Engineers (India) [New Delhi] : Springer India, 2012 101(2020), 2 vom: 06. Juni, Seite 141-148 (DE-627)722237146 (DE-600)2677610-8 2250-2491 nnns volume:101 year:2020 number:2 day:06 month:06 pages:141-148 https://dx.doi.org/10.1007/s40034-020-00167-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 101 2020 2 06 06 141-148
spelling	10.1007/s40034-020-00167-0 doi (DE-627)SPR042081912 (SPR)s40034-020-00167-0-e DE-627 ger DE-627 rakwb eng 620 690 ASE Jianxiu, Su verfasserin aut Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives. 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213 Rui, Xu verfasserin aut Yipu, Wang verfasserin aut Jiejing, Li verfasserin aut Haixu, Liu verfasserin aut Enthalten in Journal of the Institution of Engineers (India) [New Delhi] : Springer India, 2012 101(2020), 2 vom: 06. Juni, Seite 141-148 (DE-627)722237146 (DE-600)2677610-8 2250-2491 nnns volume:101 year:2020 number:2 day:06 month:06 pages:141-148 https://dx.doi.org/10.1007/s40034-020-00167-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 101 2020 2 06 06 141-148
allfields_unstemmed	10.1007/s40034-020-00167-0 doi (DE-627)SPR042081912 (SPR)s40034-020-00167-0-e DE-627 ger DE-627 rakwb eng 620 690 ASE Jianxiu, Su verfasserin aut Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives. 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213 Rui, Xu verfasserin aut Yipu, Wang verfasserin aut Jiejing, Li verfasserin aut Haixu, Liu verfasserin aut Enthalten in Journal of the Institution of Engineers (India) [New Delhi] : Springer India, 2012 101(2020), 2 vom: 06. Juni, Seite 141-148 (DE-627)722237146 (DE-600)2677610-8 2250-2491 nnns volume:101 year:2020 number:2 day:06 month:06 pages:141-148 https://dx.doi.org/10.1007/s40034-020-00167-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 101 2020 2 06 06 141-148
allfieldsGer	10.1007/s40034-020-00167-0 doi (DE-627)SPR042081912 (SPR)s40034-020-00167-0-e DE-627 ger DE-627 rakwb eng 620 690 ASE Jianxiu, Su verfasserin aut Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives. 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213 Rui, Xu verfasserin aut Yipu, Wang verfasserin aut Jiejing, Li verfasserin aut Haixu, Liu verfasserin aut Enthalten in Journal of the Institution of Engineers (India) [New Delhi] : Springer India, 2012 101(2020), 2 vom: 06. Juni, Seite 141-148 (DE-627)722237146 (DE-600)2677610-8 2250-2491 nnns volume:101 year:2020 number:2 day:06 month:06 pages:141-148 https://dx.doi.org/10.1007/s40034-020-00167-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 101 2020 2 06 06 141-148
allfieldsSound	10.1007/s40034-020-00167-0 doi (DE-627)SPR042081912 (SPR)s40034-020-00167-0-e DE-627 ger DE-627 rakwb eng 620 690 ASE Jianxiu, Su verfasserin aut Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives. 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213 Rui, Xu verfasserin aut Yipu, Wang verfasserin aut Jiejing, Li verfasserin aut Haixu, Liu verfasserin aut Enthalten in Journal of the Institution of Engineers (India) [New Delhi] : Springer India, 2012 101(2020), 2 vom: 06. Juni, Seite 141-148 (DE-627)722237146 (DE-600)2677610-8 2250-2491 nnns volume:101 year:2020 number:2 day:06 month:06 pages:141-148 https://dx.doi.org/10.1007/s40034-020-00167-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 101 2020 2 06 06 141-148
language	English
source	Enthalten in Journal of the Institution of Engineers (India) 101(2020), 2 vom: 06. Juni, Seite 141-148 volume:101 year:2020 number:2 day:06 month:06 pages:141-148
sourceStr	Enthalten in Journal of the Institution of Engineers (India) 101(2020), 2 vom: 06. Juni, Seite 141-148 volume:101 year:2020 number:2 day:06 month:06 pages:141-148
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	6H–SiC single-crystal Lapping paste Oxidant Abrasive Material removal rate
dewey-raw	620
isfreeaccess_bool	false
container_title	Journal of the Institution of Engineers (India)
authorswithroles_txt_mv	Jianxiu, Su @@aut@@ Rui, Xu @@aut@@ Yipu, Wang @@aut@@ Jiejing, Li @@aut@@ Haixu, Liu @@aut@@
publishDateDaySort_date	2020-06-06T00:00:00Z
hierarchy_top_id	722237146
dewey-sort	3620
id	SPR042081912
language_de	englisch
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The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. 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author	Jianxiu, Su
spellingShingle	Jianxiu, Su ddc 620 misc 6H–SiC single-crystal misc Lapping paste misc Oxidant misc Abrasive misc Material removal rate Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping
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topic_title	620 690 ASE Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping 6H–SiC single-crystal (dpeaa)DE-He213 Lapping paste (dpeaa)DE-He213 Oxidant (dpeaa)DE-He213 Abrasive (dpeaa)DE-He213 Material removal rate (dpeaa)DE-He213
topic	ddc 620 misc 6H–SiC single-crystal misc Lapping paste misc Oxidant misc Abrasive misc Material removal rate
topic_unstemmed	ddc 620 misc 6H–SiC single-crystal misc Lapping paste misc Oxidant misc Abrasive misc Material removal rate
topic_browse	ddc 620 misc 6H–SiC single-crystal misc Lapping paste misc Oxidant misc Abrasive misc Material removal rate
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title	Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping
ctrlnum	(DE-627)SPR042081912 (SPR)s40034-020-00167-0-e
title_full	Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping
author_sort	Jianxiu, Su
journal	Journal of the Institution of Engineers (India)
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author_browse	Jianxiu, Su Rui, Xu Yipu, Wang Jiejing, Li Haixu, Liu
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author-letter	Jianxiu, Su
doi_str_mv	10.1007/s40034-020-00167-0
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title_sort	study on lapping paste of 6h–sic single-crystal substrate in tribochemical mechanical lapping
title_auth	Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping
abstract	Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives.
abstractGer	Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives.
abstract_unstemmed	Abstract To improve the efficiency and surface quality in tribochemical mechanical lapping of 6H–SiC single-crystal substrate, the effects of oxidant type, content and abrasive size on the material removal rate (MRR) and surface roughness were studied in this paper. The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. The tribochemical reactions on the surface of SiC will occur and oxides of $ SiO_{2} $ or Si(OH)4 or $ Na_{2} %$ SiO_{3} $ or the compound of $ SiO_{2} $, $ Na_{2} %$ SiO_{3} $ and Si(OH)4 produced on the surface of SiC will be removed by the abrasives.
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title_short	Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping
url	https://dx.doi.org/10.1007/s40034-020-00167-0
remote_bool	true
author2	Rui, Xu Yipu, Wang Jiejing, Li Haixu, Liu
author2Str	Rui, Xu Yipu, Wang Jiejing, Li Haixu, Liu
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doi_str	10.1007/s40034-020-00167-0
up_date	2024-07-04T00:44:29.080Z
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The results show that different oxidants have their maximum of material removal rate at their respective optimum content, namely 1768 nm/min for 10% wt sodium hydroxide, 1382 nm/min for 5% wt potassium permanganate and 1271 nm/min for 5% wt dichromium trioxide, respectively. However, the types and contents of oxidants have little effect on the surface roughness of SiC after lapping. Therefore, 10% wt NaOH was chosen as the oxidant of tribochemical mechanical lapping paste for lapping 6H–SiC single-crystal substrate. The abrasive size had a great influence on the material removal rate in lapping 6H–SiC single-crystal substrate. When the abrasive size is 28 µm in diameter, the material removal rate reaches the maximum value, but the surface roughness also is the maximum value after lapping. Then, the composition of optimized lapping paste was obtained. Research results show that the larger the abrasive using in lapping paste is, the larger the MRR and surface roughness are in certain range. 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Study on Lapping Paste of 6H–SiC Single-Crystal Substrate in Tribochemical Mechanical Lapping

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