Iodine-Based dry Etching Chemistries for InP and Related Compounds
Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than t...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Pearton, S. J. [verfasserIn] Chakrabarti, U. K. [verfasserIn] Katz, A. [verfasserIn] Abernathy, C. R. [verfasserIn] Hobson, W. S. [verfasserIn] Ren, F. [verfasserIn] Fullowan, T. R. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1992 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 282(1992), 1 vom: 15. Sept., Seite 123-130 |
|---|---|
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volume:282 ; year:1992 ; number:1 ; day:15 ; month:09 ; pages:123-130 |
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| DOI / URN: |
10.1557/PROC-282-123 |
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SPR042139449 |
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| 520 | |a Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. | ||
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| 700 | 1 | |a Hobson, W. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Ren, F. |e verfasserin |4 aut | |
| 700 | 1 | |a Fullowan, T. R. |e verfasserin |4 aut | |
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10.1557/PROC-282-123 doi (DE-627)SPR042139449 (SPR)PROC-282-123-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Iodine-Based dry Etching Chemistries for InP and Related Compounds 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. Chakrabarti, U. K. verfasserin aut Katz, A. verfasserin aut Abernathy, C. R. verfasserin aut Hobson, W. S. verfasserin aut Ren, F. verfasserin aut Fullowan, T. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 282(1992), 1 vom: 15. Sept., Seite 123-130 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:282 year:1992 number:1 day:15 month:09 pages:123-130 https://dx.doi.org/10.1557/PROC-282-123 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 282 1992 1 15 09 123-130 |
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10.1557/PROC-282-123 doi (DE-627)SPR042139449 (SPR)PROC-282-123-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Iodine-Based dry Etching Chemistries for InP and Related Compounds 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. Chakrabarti, U. K. verfasserin aut Katz, A. verfasserin aut Abernathy, C. R. verfasserin aut Hobson, W. S. verfasserin aut Ren, F. verfasserin aut Fullowan, T. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 282(1992), 1 vom: 15. Sept., Seite 123-130 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:282 year:1992 number:1 day:15 month:09 pages:123-130 https://dx.doi.org/10.1557/PROC-282-123 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 282 1992 1 15 09 123-130 |
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10.1557/PROC-282-123 doi (DE-627)SPR042139449 (SPR)PROC-282-123-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Iodine-Based dry Etching Chemistries for InP and Related Compounds 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. Chakrabarti, U. K. verfasserin aut Katz, A. verfasserin aut Abernathy, C. R. verfasserin aut Hobson, W. S. verfasserin aut Ren, F. verfasserin aut Fullowan, T. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 282(1992), 1 vom: 15. Sept., Seite 123-130 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:282 year:1992 number:1 day:15 month:09 pages:123-130 https://dx.doi.org/10.1557/PROC-282-123 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 282 1992 1 15 09 123-130 |
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10.1557/PROC-282-123 doi (DE-627)SPR042139449 (SPR)PROC-282-123-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Iodine-Based dry Etching Chemistries for InP and Related Compounds 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. Chakrabarti, U. K. verfasserin aut Katz, A. verfasserin aut Abernathy, C. R. verfasserin aut Hobson, W. S. verfasserin aut Ren, F. verfasserin aut Fullowan, T. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 282(1992), 1 vom: 15. Sept., Seite 123-130 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:282 year:1992 number:1 day:15 month:09 pages:123-130 https://dx.doi.org/10.1557/PROC-282-123 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 282 1992 1 15 09 123-130 |
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10.1557/PROC-282-123 doi (DE-627)SPR042139449 (SPR)PROC-282-123-e DE-627 ger DE-627 rakwb eng 670 ASE Pearton, S. J. verfasserin aut Iodine-Based dry Etching Chemistries for InP and Related Compounds 1992 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. Chakrabarti, U. K. verfasserin aut Katz, A. verfasserin aut Abernathy, C. R. verfasserin aut Hobson, W. S. verfasserin aut Ren, F. verfasserin aut Fullowan, T. R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 282(1992), 1 vom: 15. Sept., Seite 123-130 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:282 year:1992 number:1 day:15 month:09 pages:123-130 https://dx.doi.org/10.1557/PROC-282-123 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 282 1992 1 15 09 123-130 |
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iodine-based dry etching chemistries for inp and related compounds |
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Iodine-Based dry Etching Chemistries for InP and Related Compounds |
| abstract |
Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. |
| abstractGer |
Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. |
| abstract_unstemmed |
Abstract A comparison is given of the dry etching characteristics of InP and related materials in high ion density (>$ 10^{11} $ $ cm^{-2} $) microwave discharges of HI, $ CH_{3} $I, $ C_{2} %$ H_{5} $I, $ C_{3} %$ H_{7} $I and $ C_{2} %$ H_{3} $I. The $ InI_{x} $ species are more volatile than their $ InCl_{x} $ counterparts near room temperature and rapid etch rates can therefore be achieved without the need for sample heating. HI discharges provide faster etch rates than the halocarbon-based mixtures, but are more corrosive. All of these gas chemistries offer faster rates than conventional $ CH_{4} $/$ H_{2} $ mixtures. Halocarbon-iodide discharges still suffer from polymer deposition on the mask and within the reactor, as with $ CH_{4} $/$ H_{2} $. AES analysis shows an absence of contaminating residues with all of the iodine-based chemistries, and highly anisotropic features are obtained since the etching is driven by ion-enhanced desorption of the reaction products. |
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Iodine-Based dry Etching Chemistries for InP and Related Compounds |
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https://dx.doi.org/10.1557/PROC-282-123 |
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| author2 |
Chakrabarti, U. K. Katz, A. Abernathy, C. R. Hobson, W. S. Ren, F. Fullowan, T. R. |
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Chakrabarti, U. K. Katz, A. Abernathy, C. R. Hobson, W. S. Ren, F. Fullowan, T. R. |
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10.1557/PROC-282-123 |
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2024-07-04T00:59:10.003Z |
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