Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD
Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (0...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shinozaki, Kazuo [verfasserIn] Iwasaki, Akinori [verfasserIn] Wakiya, Naoki [verfasserIn] Mizutani, Nobuyasu [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2003 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 768(2003), 1 vom: 01. Nov. |
|---|---|
| Übergeordnetes Werk: |
volume:768 ; year:2003 ; number:1 ; day:01 ; month:11 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-768-G3.8 |
|---|
| Katalog-ID: |
SPR042207959 |
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| 245 | 1 | 0 | |a Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
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| 520 | |a Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. | ||
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| 700 | 1 | |a Wakiya, Naoki |e verfasserin |4 aut | |
| 700 | 1 | |a Mizutani, Nobuyasu |e verfasserin |4 aut | |
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10.1557/PROC-768-G3.8 doi (DE-627)SPR042207959 (SPR)PROC-768-G3.8-e DE-627 ger DE-627 rakwb eng 670 ASE Shinozaki, Kazuo verfasserin aut Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. Iwasaki, Akinori verfasserin aut Wakiya, Naoki verfasserin aut Mizutani, Nobuyasu verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 768(2003), 1 vom: 01. Nov. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:768 year:2003 number:1 day:01 month:11 https://dx.doi.org/10.1557/PROC-768-G3.8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 768 2003 1 01 11 |
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10.1557/PROC-768-G3.8 doi (DE-627)SPR042207959 (SPR)PROC-768-G3.8-e DE-627 ger DE-627 rakwb eng 670 ASE Shinozaki, Kazuo verfasserin aut Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. Iwasaki, Akinori verfasserin aut Wakiya, Naoki verfasserin aut Mizutani, Nobuyasu verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 768(2003), 1 vom: 01. Nov. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:768 year:2003 number:1 day:01 month:11 https://dx.doi.org/10.1557/PROC-768-G3.8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 768 2003 1 01 11 |
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10.1557/PROC-768-G3.8 doi (DE-627)SPR042207959 (SPR)PROC-768-G3.8-e DE-627 ger DE-627 rakwb eng 670 ASE Shinozaki, Kazuo verfasserin aut Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. Iwasaki, Akinori verfasserin aut Wakiya, Naoki verfasserin aut Mizutani, Nobuyasu verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 768(2003), 1 vom: 01. Nov. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:768 year:2003 number:1 day:01 month:11 https://dx.doi.org/10.1557/PROC-768-G3.8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 768 2003 1 01 11 |
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10.1557/PROC-768-G3.8 doi (DE-627)SPR042207959 (SPR)PROC-768-G3.8-e DE-627 ger DE-627 rakwb eng 670 ASE Shinozaki, Kazuo verfasserin aut Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. Iwasaki, Akinori verfasserin aut Wakiya, Naoki verfasserin aut Mizutani, Nobuyasu verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 768(2003), 1 vom: 01. Nov. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:768 year:2003 number:1 day:01 month:11 https://dx.doi.org/10.1557/PROC-768-G3.8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 768 2003 1 01 11 |
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10.1557/PROC-768-G3.8 doi (DE-627)SPR042207959 (SPR)PROC-768-G3.8-e DE-627 ger DE-627 rakwb eng 670 ASE Shinozaki, Kazuo verfasserin aut Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. Iwasaki, Akinori verfasserin aut Wakiya, Naoki verfasserin aut Mizutani, Nobuyasu verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 768(2003), 1 vom: 01. Nov. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:768 year:2003 number:1 day:01 month:11 https://dx.doi.org/10.1557/PROC-768-G3.8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 768 2003 1 01 11 |
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Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. 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670 ASE Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
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Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
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(DE-627)SPR042207959 (SPR)PROC-768-G3.8-e |
| title_full |
Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
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Shinozaki, Kazuo |
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600 - Technology |
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2003 |
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Shinozaki, Kazuo Iwasaki, Akinori Wakiya, Naoki Mizutani, Nobuyasu |
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768 |
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670 ASE |
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Elektronische Aufsätze |
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Shinozaki, Kazuo |
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10.1557/PROC-768-G3.8 |
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670 |
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verfasserin |
| title_sort |
control of crystal orientations and its electrical properties of pzt/ru and pzt/$ ruo_{2} $ thin films by mocvd |
| title_auth |
Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
| abstract |
Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. |
| abstractGer |
Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. |
| abstract_unstemmed |
Abstract Ru and $ RuO_{2} $ thin films were deposited on (100)$ LaAlO_{3} $ (LAO), (100)MgO and (111)Pt/Ir/ $ SiO_{2} $/Si substrates byMOCVD. Pb(Zr,Ti)$ O_{3} $ (PZT) was fabricated on Ru/LAOand $ RuO_{2} $/LAO. Ru thin films deposited at 400°C or higher on $ LaAlO_{3} $ and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/$ SiO_{2} $/Si. $ RuO_{2} $ thin films with (100) orientation were deposited both on $ LaAlO_{3} $ and Pt/Ir/$ SiO_{2} $/Si. (110)-oriented $ RuO_{2} $ thin film was deposited on MgO. Epitaxial $ RuO_{2} $ thin films were deposited on $ LaAlO_{3} $ and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and $ RuO_{2} $ thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the $ RuO_{2} $ films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on $ RuO_{2} $/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/$ cm^{2} $. (110) PZT on $ RuO_{2} $/LAO showed lower Pr (∼30 μC/$ cm^{2} $), but showed low leakage current ($ 10^{-9} $ A/$ cm^{2} $ at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics. |
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| title_short |
Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/$ RuO_{2} $ Thin Films by MOCVD |
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https://dx.doi.org/10.1557/PROC-768-G3.8 |
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Iwasaki, Akinori Wakiya, Naoki Mizutani, Nobuyasu |
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