Effects of thermal annealing in the properties of PECVD a-SiC layers
Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Marsal, L. F. [verfasserIn] Pallares, J. [verfasserIn] Orpella, A. [verfasserIn] Bardés, D. [verfasserIn] Puigdollers, J. [verfasserIn] Alcubilla, R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 609(1999), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:609 ; year:1999 ; number:1 ; month:12 |
| Links: |
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| DOI / URN: |
10.1557/PROC-609-A23.7 |
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SPR042263557 |
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| 520 | |a Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. | ||
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10.1557/PROC-609-A23.7 doi (DE-627)SPR042263557 (DE-599)SPRPROC-609-A23.7-e (SPR)PROC-609-A23.7-e DE-627 ger DE-627 rakwb eng 670 ASE Marsal, L. F. verfasserin aut Effects of thermal annealing in the properties of PECVD a-SiC layers 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. Pallares, J. verfasserin aut Orpella, A. verfasserin aut Bardés, D. verfasserin aut Puigdollers, J. verfasserin aut Alcubilla, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A23.7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A23.7 doi (DE-627)SPR042263557 (DE-599)SPRPROC-609-A23.7-e (SPR)PROC-609-A23.7-e DE-627 ger DE-627 rakwb eng 670 ASE Marsal, L. F. verfasserin aut Effects of thermal annealing in the properties of PECVD a-SiC layers 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. Pallares, J. verfasserin aut Orpella, A. verfasserin aut Bardés, D. verfasserin aut Puigdollers, J. verfasserin aut Alcubilla, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A23.7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A23.7 doi (DE-627)SPR042263557 (DE-599)SPRPROC-609-A23.7-e (SPR)PROC-609-A23.7-e DE-627 ger DE-627 rakwb eng 670 ASE Marsal, L. F. verfasserin aut Effects of thermal annealing in the properties of PECVD a-SiC layers 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. Pallares, J. verfasserin aut Orpella, A. verfasserin aut Bardés, D. verfasserin aut Puigdollers, J. verfasserin aut Alcubilla, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A23.7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A23.7 doi (DE-627)SPR042263557 (DE-599)SPRPROC-609-A23.7-e (SPR)PROC-609-A23.7-e DE-627 ger DE-627 rakwb eng 670 ASE Marsal, L. F. verfasserin aut Effects of thermal annealing in the properties of PECVD a-SiC layers 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. Pallares, J. verfasserin aut Orpella, A. verfasserin aut Bardés, D. verfasserin aut Puigdollers, J. verfasserin aut Alcubilla, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A23.7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A23.7 doi (DE-627)SPR042263557 (DE-599)SPRPROC-609-A23.7-e (SPR)PROC-609-A23.7-e DE-627 ger DE-627 rakwb eng 670 ASE Marsal, L. F. verfasserin aut Effects of thermal annealing in the properties of PECVD a-SiC layers 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. Pallares, J. verfasserin aut Orpella, A. verfasserin aut Bardés, D. verfasserin aut Puigdollers, J. verfasserin aut Alcubilla, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A23.7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. |
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Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. |
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Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. Results indicate promising features such as low base currents and good emitter Gummel numbers. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042263557</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052754.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201204s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-609-A23.7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042263557</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-609-A23.7-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-609-A23.7-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Marsal, L. F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of thermal annealing in the properties of PECVD a-SiC layers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Effects of thermal annealing in the properties of PECVD amorphous-$ Si_{0.8} %$ C_{0.2} $:H layers were studied. In order to reduce the density defects and increase the electrical conductivity, some samples were annealed: at 500 °C during 1 hour followed by 15 minutes at 800 °C. The results show that in the course of the thermal process, the hydrogen diffuse outside the film and the annealed $ Si_{0.8} %$ C_{0.2} $:H films tend to segregate in silicon clusters and, as a result, partially crystallize. Electrical dark conductivity shows an increase in more than six orders of magnitude, while the optical bandgap decreases from 1.9 eV to 1.4 eV. Annealed- Si0.8C0.2 films have been used as emitter in silicon bipolar transistors. 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