TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix
Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular compos...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Feoktistov, N. A. [verfasserIn] Golubev, V. G. [verfasserIn] Hutchison, J. L. [verfasserIn] Kurdyukov, D. A. [verfasserIn] Pevtsov, A. B. [verfasserIn] Schwarz, R. [verfasserIn] Sloan, J. [verfasserIn] Sorokin, L. M. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 609(1999), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:609 ; year:1999 ; number:1 ; month:12 |
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| DOI / URN: |
10.1557/PROC-609-A24.4 |
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SPR042263581 |
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| 520 | |a Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. | ||
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10.1557/PROC-609-A24.4 doi (DE-627)SPR042263581 (DE-599)SPRPROC-609-A24.4-e (SPR)PROC-609-A24.4-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. Golubev, V. G. verfasserin aut Hutchison, J. L. verfasserin aut Kurdyukov, D. A. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Sloan, J. verfasserin aut Sorokin, L. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A24.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A24.4 doi (DE-627)SPR042263581 (DE-599)SPRPROC-609-A24.4-e (SPR)PROC-609-A24.4-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. Golubev, V. G. verfasserin aut Hutchison, J. L. verfasserin aut Kurdyukov, D. A. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Sloan, J. verfasserin aut Sorokin, L. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A24.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A24.4 doi (DE-627)SPR042263581 (DE-599)SPRPROC-609-A24.4-e (SPR)PROC-609-A24.4-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. Golubev, V. G. verfasserin aut Hutchison, J. L. verfasserin aut Kurdyukov, D. A. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Sloan, J. verfasserin aut Sorokin, L. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A24.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A24.4 doi (DE-627)SPR042263581 (DE-599)SPRPROC-609-A24.4-e (SPR)PROC-609-A24.4-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. Golubev, V. G. verfasserin aut Hutchison, J. L. verfasserin aut Kurdyukov, D. A. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Sloan, J. verfasserin aut Sorokin, L. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A24.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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10.1557/PROC-609-A24.4 doi (DE-627)SPR042263581 (DE-599)SPRPROC-609-A24.4-e (SPR)PROC-609-A24.4-e DE-627 ger DE-627 rakwb eng 670 ASE Feoktistov, N. A. verfasserin aut TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. Golubev, V. G. verfasserin aut Hutchison, J. L. verfasserin aut Kurdyukov, D. A. verfasserin aut Pevtsov, A. B. verfasserin aut Schwarz, R. verfasserin aut Sloan, J. verfasserin aut Sorokin, L. M. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 609(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:609 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-609-A24.4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 609 1999 1 12 |
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Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. |
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Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. |
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Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042263581</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052754.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201204s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-609-A24.4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042263581</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-609-A24.4-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-609-A24.4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Feoktistov, N. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">TEM and HREM study of silicon and platinum nanoscale ensembles in 3D dielectric opal matrix</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Golubev, V. G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hutchison, J. L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kurdyukov, D. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pevtsov, A. B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schwarz, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sloan, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sorokin, L. 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