Mechanism of a New Post CMP Cleaning for Trench Isolation Process
Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Miyashita, N. [verfasserIn] Mase, Y. [verfasserIn] Takayasu, J. [verfasserIn] Minami, Y. [verfasserIn] Kodera, M. [verfasserIn] Abe, M. [verfasserIn] Izumi, T. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 566(1999), 1 vom: 01. Okt., Seite 253-260 |
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volume:566 ; year:1999 ; number:1 ; day:01 ; month:10 ; pages:253-260 |
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10.1557/PROC-566-253 |
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| 520 | |a Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. | ||
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10.1557/PROC-566-253 doi (DE-627)SPR042292034 (DE-599)SPRPROC-566-253-e (SPR)PROC-566-253-e DE-627 ger DE-627 rakwb eng 670 ASE Miyashita, N. verfasserin aut Mechanism of a New Post CMP Cleaning for Trench Isolation Process 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. Mase, Y. verfasserin aut Takayasu, J. verfasserin aut Minami, Y. verfasserin aut Kodera, M. verfasserin aut Abe, M. verfasserin aut Izumi, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 566(1999), 1 vom: 01. Okt., Seite 253-260 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:566 year:1999 number:1 day:01 month:10 pages:253-260 https://dx.doi.org/10.1557/PROC-566-253 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 566 1999 1 01 10 253-260 |
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10.1557/PROC-566-253 doi (DE-627)SPR042292034 (DE-599)SPRPROC-566-253-e (SPR)PROC-566-253-e DE-627 ger DE-627 rakwb eng 670 ASE Miyashita, N. verfasserin aut Mechanism of a New Post CMP Cleaning for Trench Isolation Process 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. Mase, Y. verfasserin aut Takayasu, J. verfasserin aut Minami, Y. verfasserin aut Kodera, M. verfasserin aut Abe, M. verfasserin aut Izumi, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 566(1999), 1 vom: 01. Okt., Seite 253-260 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:566 year:1999 number:1 day:01 month:10 pages:253-260 https://dx.doi.org/10.1557/PROC-566-253 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 566 1999 1 01 10 253-260 |
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10.1557/PROC-566-253 doi (DE-627)SPR042292034 (DE-599)SPRPROC-566-253-e (SPR)PROC-566-253-e DE-627 ger DE-627 rakwb eng 670 ASE Miyashita, N. verfasserin aut Mechanism of a New Post CMP Cleaning for Trench Isolation Process 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. Mase, Y. verfasserin aut Takayasu, J. verfasserin aut Minami, Y. verfasserin aut Kodera, M. verfasserin aut Abe, M. verfasserin aut Izumi, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 566(1999), 1 vom: 01. Okt., Seite 253-260 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:566 year:1999 number:1 day:01 month:10 pages:253-260 https://dx.doi.org/10.1557/PROC-566-253 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 566 1999 1 01 10 253-260 |
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10.1557/PROC-566-253 doi (DE-627)SPR042292034 (DE-599)SPRPROC-566-253-e (SPR)PROC-566-253-e DE-627 ger DE-627 rakwb eng 670 ASE Miyashita, N. verfasserin aut Mechanism of a New Post CMP Cleaning for Trench Isolation Process 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. Mase, Y. verfasserin aut Takayasu, J. verfasserin aut Minami, Y. verfasserin aut Kodera, M. verfasserin aut Abe, M. verfasserin aut Izumi, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 566(1999), 1 vom: 01. Okt., Seite 253-260 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:566 year:1999 number:1 day:01 month:10 pages:253-260 https://dx.doi.org/10.1557/PROC-566-253 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 566 1999 1 01 10 253-260 |
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10.1557/PROC-566-253 doi (DE-627)SPR042292034 (DE-599)SPRPROC-566-253-e (SPR)PROC-566-253-e DE-627 ger DE-627 rakwb eng 670 ASE Miyashita, N. verfasserin aut Mechanism of a New Post CMP Cleaning for Trench Isolation Process 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. Mase, Y. verfasserin aut Takayasu, J. verfasserin aut Minami, Y. verfasserin aut Kodera, M. verfasserin aut Abe, M. verfasserin aut Izumi, T. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 566(1999), 1 vom: 01. Okt., Seite 253-260 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:566 year:1999 number:1 day:01 month:10 pages:253-260 https://dx.doi.org/10.1557/PROC-566-253 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 566 1999 1 01 10 253-260 |
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Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. |
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Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. |
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Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042292034</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052657.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201207s1999 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-566-253</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042292034</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-566-253-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-566-253-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Miyashita, N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Mechanism of a New Post CMP Cleaning for Trench Isolation Process</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mase, Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Takayasu, J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Minami, Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kodera, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abe, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Izumi, T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">566(1999), 1 vom: 01. Okt., Seite 253-260</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:566</subfield><subfield code="g">year:1999</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:253-260</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-566-253</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">566</subfield><subfield code="j">1999</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">10</subfield><subfield code="h">253-260</subfield></datafield></record></collection>
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