Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique
Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was va...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ferreira, I. [verfasserIn] Fernandes, F. Braz [verfasserIn] Vilarinho, P. [verfasserIn] Fortunato, E. [verfasserIn] Martins, R. [verfasserIn] |
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Englisch |
| Erschienen: |
2000 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 664(2000), 1 vom: 01. Dez. |
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volume:664 ; year:2000 ; number:1 ; day:01 ; month:12 |
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10.1557/PROC-664-A7.6 |
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SPR042292816 |
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| 520 | |a Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. | ||
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10.1557/PROC-664-A7.6 doi (DE-627)SPR042292816 (DE-599)SPRPROC-664-A7.6-e (SPR)PROC-664-A7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. Fernandes, F. Braz verfasserin aut Vilarinho, P. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 664(2000), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:664 year:2000 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-664-A7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 664 2000 1 01 12 |
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10.1557/PROC-664-A7.6 doi (DE-627)SPR042292816 (DE-599)SPRPROC-664-A7.6-e (SPR)PROC-664-A7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. Fernandes, F. Braz verfasserin aut Vilarinho, P. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 664(2000), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:664 year:2000 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-664-A7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 664 2000 1 01 12 |
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10.1557/PROC-664-A7.6 doi (DE-627)SPR042292816 (DE-599)SPRPROC-664-A7.6-e (SPR)PROC-664-A7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. Fernandes, F. Braz verfasserin aut Vilarinho, P. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 664(2000), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:664 year:2000 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-664-A7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 664 2000 1 01 12 |
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10.1557/PROC-664-A7.6 doi (DE-627)SPR042292816 (DE-599)SPRPROC-664-A7.6-e (SPR)PROC-664-A7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. Fernandes, F. Braz verfasserin aut Vilarinho, P. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 664(2000), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:664 year:2000 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-664-A7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 664 2000 1 01 12 |
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10.1557/PROC-664-A7.6 doi (DE-627)SPR042292816 (DE-599)SPRPROC-664-A7.6-e (SPR)PROC-664-A7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Ferreira, I. verfasserin aut Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. Fernandes, F. Braz verfasserin aut Vilarinho, P. verfasserin aut Fortunato, E. verfasserin aut Martins, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 664(2000), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:664 year:2000 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-664-A7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 664 2000 1 01 12 |
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Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique |
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Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. |
| abstractGer |
Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. |
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Abstract In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from $ 10^{−2} $ to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to $ 2cm^{2} $/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm. |
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Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique |
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Fernandes, F. Braz Vilarinho, P. Fortunato, E. Martins, R. |
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2024-07-04T01:33:30.615Z |
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