Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering

Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being...
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Autor*in:	Choi, Won Kyoung [verfasserIn] Choi, Si Kyoung [verfasserIn] Lee, Hyuck Mo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	1999

Übergeordnetes Werk:	Enthalten in: Journal of materials research - Berlin : Springer, 1986, 14(1999), 12 vom: Dez., Seite 4677-4684
Übergeordnetes Werk:	volume:14 ; year:1999 ; number:12 ; month:12 ; pages:4677-4684

Links:	Volltext

DOI / URN:	10.1557/JMR.1999.0633

Katalog-ID:	SPR042312329

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520			\|a Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain.
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allfields	10.1557/JMR.1999.0633 doi (DE-627)SPR042312329 (DE-599)SPRJMR.1999.0633-e (SPR)JMR.1999.0633-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Choi, Won Kyoung verfasserin aut Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. Choi, Si Kyoung verfasserin aut Lee, Hyuck Mo verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 14(1999), 12 vom: Dez., Seite 4677-4684 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:14 year:1999 number:12 month:12 pages:4677-4684 https://dx.doi.org/10.1557/JMR.1999.0633 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 14 1999 12 12 4677-4684
spelling	10.1557/JMR.1999.0633 doi (DE-627)SPR042312329 (DE-599)SPRJMR.1999.0633-e (SPR)JMR.1999.0633-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Choi, Won Kyoung verfasserin aut Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. Choi, Si Kyoung verfasserin aut Lee, Hyuck Mo verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 14(1999), 12 vom: Dez., Seite 4677-4684 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:14 year:1999 number:12 month:12 pages:4677-4684 https://dx.doi.org/10.1557/JMR.1999.0633 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 14 1999 12 12 4677-4684
allfields_unstemmed	10.1557/JMR.1999.0633 doi (DE-627)SPR042312329 (DE-599)SPRJMR.1999.0633-e (SPR)JMR.1999.0633-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Choi, Won Kyoung verfasserin aut Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. Choi, Si Kyoung verfasserin aut Lee, Hyuck Mo verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 14(1999), 12 vom: Dez., Seite 4677-4684 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:14 year:1999 number:12 month:12 pages:4677-4684 https://dx.doi.org/10.1557/JMR.1999.0633 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 14 1999 12 12 4677-4684
allfieldsGer	10.1557/JMR.1999.0633 doi (DE-627)SPR042312329 (DE-599)SPRJMR.1999.0633-e (SPR)JMR.1999.0633-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Choi, Won Kyoung verfasserin aut Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. Choi, Si Kyoung verfasserin aut Lee, Hyuck Mo verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 14(1999), 12 vom: Dez., Seite 4677-4684 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:14 year:1999 number:12 month:12 pages:4677-4684 https://dx.doi.org/10.1557/JMR.1999.0633 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 14 1999 12 12 4677-4684
allfieldsSound	10.1557/JMR.1999.0633 doi (DE-627)SPR042312329 (DE-599)SPRJMR.1999.0633-e (SPR)JMR.1999.0633-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Choi, Won Kyoung verfasserin aut Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain. Choi, Si Kyoung verfasserin aut Lee, Hyuck Mo verfasserin aut Enthalten in Journal of materials research Berlin : Springer, 1986 14(1999), 12 vom: Dez., Seite 4677-4684 (DE-627)320527026 (DE-600)2015297-8 2044-5326 nnns volume:14 year:1999 number:12 month:12 pages:4677-4684 https://dx.doi.org/10.1557/JMR.1999.0633 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_31 GBV_ILN_70 GBV_ILN_120 GBV_ILN_293 GBV_ILN_374 GBV_ILN_702 GBV_ILN_2005 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_4126 51.00 ASE AR 14 1999 12 12 4677-4684
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author	Choi, Won Kyoung
spellingShingle	Choi, Won Kyoung ddc 670 bkl 51.00 Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering
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title_sort	relationship between domain structure and film thickness in epitaxial $ pbtio_{3} $ films deposited on mgo(001) by reactive sputtering
title_auth	Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering
abstract	Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain.
abstractGer	Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain.
abstract_unstemmed	Abstract The epitaxial $ PbTiO_{3} $ thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, α, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 °C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of α and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain.
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container_issue	12
title_short	Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering
url	https://dx.doi.org/10.1557/JMR.1999.0633
remote_bool	true
author2	Choi, Si Kyoung Lee, Hyuck Mo
author2Str	Choi, Si Kyoung Lee, Hyuck Mo
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doi_str	10.1557/JMR.1999.0633
up_date	2024-07-04T01:37:50.582Z
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Relationship between domain structure and film thickness in epitaxial $ PbTiO_{3} $ films deposited on MgO(001) by reactive sputtering

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