The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon
Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction durin...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Oates, A. S. [verfasserIn] Newman, R. C. [verfasserIn] Tucker, J. M. [verfasserIn] Davies, G. [verfasserIn] Lightowlers, E. C. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1985 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 59(1985), 1 vom: 01. Aug., Seite 59-65 |
|---|---|
| Übergeordnetes Werk: |
volume:59 ; year:1985 ; number:1 ; day:01 ; month:08 ; pages:59-65 |
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| DOI / URN: |
10.1557/PROC-59-59 |
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SPR042314569 |
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| 520 | |a Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. | ||
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10.1557/PROC-59-59 doi (DE-627)SPR042314569 (DE-599)SPRPROC-59-59-e (SPR)PROC-59-59-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon 1985 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. Newman, R. C. verfasserin aut Tucker, J. M. verfasserin aut Davies, G. verfasserin aut Lightowlers, E. C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 59(1985), 1 vom: 01. Aug., Seite 59-65 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:59 year:1985 number:1 day:01 month:08 pages:59-65 https://dx.doi.org/10.1557/PROC-59-59 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 59 1985 1 01 08 59-65 |
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10.1557/PROC-59-59 doi (DE-627)SPR042314569 (DE-599)SPRPROC-59-59-e (SPR)PROC-59-59-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon 1985 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. Newman, R. C. verfasserin aut Tucker, J. M. verfasserin aut Davies, G. verfasserin aut Lightowlers, E. C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 59(1985), 1 vom: 01. Aug., Seite 59-65 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:59 year:1985 number:1 day:01 month:08 pages:59-65 https://dx.doi.org/10.1557/PROC-59-59 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 59 1985 1 01 08 59-65 |
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10.1557/PROC-59-59 doi (DE-627)SPR042314569 (DE-599)SPRPROC-59-59-e (SPR)PROC-59-59-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon 1985 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. Newman, R. C. verfasserin aut Tucker, J. M. verfasserin aut Davies, G. verfasserin aut Lightowlers, E. C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 59(1985), 1 vom: 01. Aug., Seite 59-65 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:59 year:1985 number:1 day:01 month:08 pages:59-65 https://dx.doi.org/10.1557/PROC-59-59 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 59 1985 1 01 08 59-65 |
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10.1557/PROC-59-59 doi (DE-627)SPR042314569 (DE-599)SPRPROC-59-59-e (SPR)PROC-59-59-e DE-627 ger DE-627 rakwb eng 670 ASE Oates, A. S. verfasserin aut The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon 1985 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. Newman, R. C. verfasserin aut Tucker, J. M. verfasserin aut Davies, G. verfasserin aut Lightowlers, E. C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 59(1985), 1 vom: 01. Aug., Seite 59-65 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:59 year:1985 number:1 day:01 month:08 pages:59-65 https://dx.doi.org/10.1557/PROC-59-59 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 59 1985 1 01 08 59-65 |
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Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. |
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Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. |
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Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process. |
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S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1985</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Measurements of optical bands in irradiated Si are combined with numerical modelling of the radiation induced reactions. No evidence is found for appreciable interaction of self-interstitials with O atoms for irradiations carried out at temperatures between 25 and 500°C. The reduction during electron irradiation of stress-induced dichroism in the 9μm oxygen band is shown to occur by sequential capture of a vacancy and a self-interstitial at the oxygen for irradiations carried out between 25 and 280°C. At higher temperatures repetitive capture and release of vacancies at oxygen atoms appears to dominate in the oxygen migration process.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Newman, R. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tucker, J. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davies, G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lightowlers, E. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">59(1985), 1 vom: 01. Aug., Seite 59-65</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:59</subfield><subfield code="g">year:1985</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:59-65</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-59-59</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">59</subfield><subfield code="j">1985</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">08</subfield><subfield code="h">59-65</subfield></datafield></record></collection>
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