Submicrometer scale growth morphology control for the making of photonic crystal structures
Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibili...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gil-Lafon, E. [verfasserIn] Trassoudaine, A. [verfasserIn] Castelluci, D. [verfasserIn] Pimpinelli, A. [verfasserIn] Saoudi, R. [verfasserIn] Parriaux, O. [verfasserIn] Muravaud, A. [verfasserIn] Darraud, C. [verfasserIn] |
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| Sprache: |
Englisch |
| Erschienen: |
2003 |
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Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 799(2003), 1 vom: Dez., Seite 74-79 |
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volume:799 ; year:2003 ; number:1 ; month:12 ; pages:74-79 |
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10.1557/PROC-799-Z2.3 |
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SPR042336139 |
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| 520 | |a Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. | ||
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| 700 | 1 | |a Saoudi, R. |e verfasserin |4 aut | |
| 700 | 1 | |a Parriaux, O. |e verfasserin |4 aut | |
| 700 | 1 | |a Muravaud, A. |e verfasserin |4 aut | |
| 700 | 1 | |a Darraud, C. |e verfasserin |4 aut | |
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10.1557/PROC-799-Z2.3 doi (DE-627)SPR042336139 (DE-599)SPRPROC-799-Z2.3-e (SPR)PROC-799-Z2.3-e DE-627 ger DE-627 rakwb eng 670 ASE Gil-Lafon, E. verfasserin aut Submicrometer scale growth morphology control for the making of photonic crystal structures 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. Trassoudaine, A. verfasserin aut Castelluci, D. verfasserin aut Pimpinelli, A. verfasserin aut Saoudi, R. verfasserin aut Parriaux, O. verfasserin aut Muravaud, A. verfasserin aut Darraud, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 799(2003), 1 vom: Dez., Seite 74-79 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:799 year:2003 number:1 month:12 pages:74-79 https://dx.doi.org/10.1557/PROC-799-Z2.3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 799 2003 1 12 74-79 |
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10.1557/PROC-799-Z2.3 doi (DE-627)SPR042336139 (DE-599)SPRPROC-799-Z2.3-e (SPR)PROC-799-Z2.3-e DE-627 ger DE-627 rakwb eng 670 ASE Gil-Lafon, E. verfasserin aut Submicrometer scale growth morphology control for the making of photonic crystal structures 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. Trassoudaine, A. verfasserin aut Castelluci, D. verfasserin aut Pimpinelli, A. verfasserin aut Saoudi, R. verfasserin aut Parriaux, O. verfasserin aut Muravaud, A. verfasserin aut Darraud, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 799(2003), 1 vom: Dez., Seite 74-79 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:799 year:2003 number:1 month:12 pages:74-79 https://dx.doi.org/10.1557/PROC-799-Z2.3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 799 2003 1 12 74-79 |
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10.1557/PROC-799-Z2.3 doi (DE-627)SPR042336139 (DE-599)SPRPROC-799-Z2.3-e (SPR)PROC-799-Z2.3-e DE-627 ger DE-627 rakwb eng 670 ASE Gil-Lafon, E. verfasserin aut Submicrometer scale growth morphology control for the making of photonic crystal structures 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. Trassoudaine, A. verfasserin aut Castelluci, D. verfasserin aut Pimpinelli, A. verfasserin aut Saoudi, R. verfasserin aut Parriaux, O. verfasserin aut Muravaud, A. verfasserin aut Darraud, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 799(2003), 1 vom: Dez., Seite 74-79 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:799 year:2003 number:1 month:12 pages:74-79 https://dx.doi.org/10.1557/PROC-799-Z2.3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 799 2003 1 12 74-79 |
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10.1557/PROC-799-Z2.3 doi (DE-627)SPR042336139 (DE-599)SPRPROC-799-Z2.3-e (SPR)PROC-799-Z2.3-e DE-627 ger DE-627 rakwb eng 670 ASE Gil-Lafon, E. verfasserin aut Submicrometer scale growth morphology control for the making of photonic crystal structures 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. Trassoudaine, A. verfasserin aut Castelluci, D. verfasserin aut Pimpinelli, A. verfasserin aut Saoudi, R. verfasserin aut Parriaux, O. verfasserin aut Muravaud, A. verfasserin aut Darraud, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 799(2003), 1 vom: Dez., Seite 74-79 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:799 year:2003 number:1 month:12 pages:74-79 https://dx.doi.org/10.1557/PROC-799-Z2.3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 799 2003 1 12 74-79 |
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10.1557/PROC-799-Z2.3 doi (DE-627)SPR042336139 (DE-599)SPRPROC-799-Z2.3-e (SPR)PROC-799-Z2.3-e DE-627 ger DE-627 rakwb eng 670 ASE Gil-Lafon, E. verfasserin aut Submicrometer scale growth morphology control for the making of photonic crystal structures 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. Trassoudaine, A. verfasserin aut Castelluci, D. verfasserin aut Pimpinelli, A. verfasserin aut Saoudi, R. verfasserin aut Parriaux, O. verfasserin aut Muravaud, A. verfasserin aut Darraud, C. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 799(2003), 1 vom: Dez., Seite 74-79 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:799 year:2003 number:1 month:12 pages:74-79 https://dx.doi.org/10.1557/PROC-799-Z2.3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 799 2003 1 12 74-79 |
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Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. |
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Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. |
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Abstract The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed. |
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| doi_str |
10.1557/PROC-799-Z2.3 |
| up_date |
2024-07-04T01:41:52.715Z |
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HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1µm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Trassoudaine, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Castelluci, D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pimpinelli, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Saoudi, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Parriaux, O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Muravaud, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Darraud, C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">799(2003), 1 vom: Dez., Seite 74-79</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:799</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:74-79</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-799-Z2.3</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">799</subfield><subfield code="j">2003</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">74-79</subfield></datafield></record></collection>
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