Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model
Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111),...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kobayashi, Yasuyuki [verfasserIn] Satake, Koji [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2003 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 808(2003), 1 vom: Dez., Seite 503-508 |
|---|---|
| Übergeordnetes Werk: |
volume:808 ; year:2003 ; number:1 ; month:12 ; pages:503-508 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-808-A9.29 |
|---|
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SPR042337399 |
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| 520 | |a Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. | ||
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10.1557/PROC-808-A9.29 doi (DE-627)SPR042337399 (DE-599)SPRPROC-808-A9.29-e (SPR)PROC-808-A9.29-e DE-627 ger DE-627 rakwb eng 670 ASE Kobayashi, Yasuyuki verfasserin aut Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. Satake, Koji verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 808(2003), 1 vom: Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:808 year:2003 number:1 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-808-A9.29 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 808 2003 1 12 503-508 |
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10.1557/PROC-808-A9.29 doi (DE-627)SPR042337399 (DE-599)SPRPROC-808-A9.29-e (SPR)PROC-808-A9.29-e DE-627 ger DE-627 rakwb eng 670 ASE Kobayashi, Yasuyuki verfasserin aut Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. Satake, Koji verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 808(2003), 1 vom: Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:808 year:2003 number:1 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-808-A9.29 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 808 2003 1 12 503-508 |
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10.1557/PROC-808-A9.29 doi (DE-627)SPR042337399 (DE-599)SPRPROC-808-A9.29-e (SPR)PROC-808-A9.29-e DE-627 ger DE-627 rakwb eng 670 ASE Kobayashi, Yasuyuki verfasserin aut Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. Satake, Koji verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 808(2003), 1 vom: Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:808 year:2003 number:1 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-808-A9.29 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 808 2003 1 12 503-508 |
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10.1557/PROC-808-A9.29 doi (DE-627)SPR042337399 (DE-599)SPRPROC-808-A9.29-e (SPR)PROC-808-A9.29-e DE-627 ger DE-627 rakwb eng 670 ASE Kobayashi, Yasuyuki verfasserin aut Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. Satake, Koji verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 808(2003), 1 vom: Dez., Seite 503-508 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:808 year:2003 number:1 month:12 pages:503-508 https://dx.doi.org/10.1557/PROC-808-A9.29 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 808 2003 1 12 503-508 |
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Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model |
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Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. |
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Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. |
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Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042337399</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112053145.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201210s2003 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-808-A9.29</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042337399</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-808-A9.29-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-808-A9.29-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kobayashi, Yasuyuki</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2003</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the µc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the µc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Satake, Koji</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">808(2003), 1 vom: Dez., Seite 503-508</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:808</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:503-508</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-808-A9.29</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">808</subfield><subfield code="j">2003</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield><subfield code="h">503-508</subfield></datafield></record></collection>
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