Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics
Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Anupama, B. Kaul [verfasserIn] Kowalczyk, Robert [verfasserIn] Megerian, Krikor [verfasserIn] von Allmen, Paul [verfasserIn] Richard, L. Baron [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2008 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 1081(2008), 1 vom: 01. Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:1081 ; year:2008 ; number:1 ; day:01 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-1081-P15-06 |
|---|
| Katalog-ID: |
SPR042378974 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR042378974 | ||
| 003 | DE-627 | ||
| 005 | 20220112053559.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 201212s2008 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-1081-P15-06 |2 doi | |
| 035 | |a (DE-627)SPR042378974 | ||
| 035 | |a (DE-599)SPRPROC-1081-P15-06-e | ||
| 035 | |a (SPR)PROC-1081-P15-06-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Anupama, B. Kaul |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| 264 | 1 | |c 2008 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. | ||
| 700 | 1 | |a Kowalczyk, Robert |e verfasserin |4 aut | |
| 700 | 1 | |a Megerian, Krikor |e verfasserin |4 aut | |
| 700 | 1 | |a von Allmen, Paul |e verfasserin |4 aut | |
| 700 | 1 | |a Richard, L. Baron |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 1081(2008), 1 vom: 01. Dez. |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:1081 |g year:2008 |g number:1 |g day:01 |g month:12 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-1081-P15-06 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 1081 |j 2008 |e 1 |b 01 |c 12 | ||
| author_variant |
b k a bk bka r k rk k m km a p v ap apv l b r lb lbr |
|---|---|
| matchkey_str |
article:19464274:2008----::etclylgecronntbsomdsndpcdswthneeetfrxrm |
| hierarchy_sort_str |
2008 |
| publishDate |
2008 |
| allfields |
10.1557/PROC-1081-P15-06 doi (DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e DE-627 ger DE-627 rakwb eng 670 ASE Anupama, B. Kaul verfasserin aut Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. Kowalczyk, Robert verfasserin aut Megerian, Krikor verfasserin aut von Allmen, Paul verfasserin aut Richard, L. Baron verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1081(2008), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1081 year:2008 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-1081-P15-06 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1081 2008 1 01 12 |
| spelling |
10.1557/PROC-1081-P15-06 doi (DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e DE-627 ger DE-627 rakwb eng 670 ASE Anupama, B. Kaul verfasserin aut Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. Kowalczyk, Robert verfasserin aut Megerian, Krikor verfasserin aut von Allmen, Paul verfasserin aut Richard, L. Baron verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1081(2008), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1081 year:2008 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-1081-P15-06 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1081 2008 1 01 12 |
| allfields_unstemmed |
10.1557/PROC-1081-P15-06 doi (DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e DE-627 ger DE-627 rakwb eng 670 ASE Anupama, B. Kaul verfasserin aut Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. Kowalczyk, Robert verfasserin aut Megerian, Krikor verfasserin aut von Allmen, Paul verfasserin aut Richard, L. Baron verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1081(2008), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1081 year:2008 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-1081-P15-06 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1081 2008 1 01 12 |
| allfieldsGer |
10.1557/PROC-1081-P15-06 doi (DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e DE-627 ger DE-627 rakwb eng 670 ASE Anupama, B. Kaul verfasserin aut Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. Kowalczyk, Robert verfasserin aut Megerian, Krikor verfasserin aut von Allmen, Paul verfasserin aut Richard, L. Baron verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1081(2008), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1081 year:2008 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-1081-P15-06 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1081 2008 1 01 12 |
| allfieldsSound |
10.1557/PROC-1081-P15-06 doi (DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e DE-627 ger DE-627 rakwb eng 670 ASE Anupama, B. Kaul verfasserin aut Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. Kowalczyk, Robert verfasserin aut Megerian, Krikor verfasserin aut von Allmen, Paul verfasserin aut Richard, L. Baron verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 1081(2008), 1 vom: 01. Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:1081 year:2008 number:1 day:01 month:12 https://dx.doi.org/10.1557/PROC-1081-P15-06 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 1081 2008 1 01 12 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 1081(2008), 1 vom: 01. Dez. volume:1081 year:2008 number:1 day:01 month:12 |
| sourceStr |
Enthalten in MRS online proceedings library 1081(2008), 1 vom: 01. Dez. volume:1081 year:2008 number:1 day:01 month:12 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Anupama, B. Kaul @@aut@@ Kowalczyk, Robert @@aut@@ Megerian, Krikor @@aut@@ von Allmen, Paul @@aut@@ Richard, L. Baron @@aut@@ |
| publishDateDaySort_date |
2008-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR042378974 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042378974</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112053559.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201212s2008 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-1081-P15-06</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042378974</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-1081-P15-06-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-1081-P15-06-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Anupama, B. Kaul</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kowalczyk, Robert</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Megerian, Krikor</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">von Allmen, Paul</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Richard, L. Baron</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">1081(2008), 1 vom: 01. Dez.</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1081</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-1081-P15-06</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1081</subfield><subfield code="j">2008</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield></datafield></record></collection>
|
| author |
Anupama, B. Kaul |
| spellingShingle |
Anupama, B. Kaul ddc 670 Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| authorStr |
Anupama, B. Kaul |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| ctrlnum |
(DE-627)SPR042378974 (DE-599)SPRPROC-1081-P15-06-e (SPR)PROC-1081-P15-06-e |
| title_full |
Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| author_sort |
Anupama, B. Kaul |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2008 |
| contenttype_str_mv |
txt |
| author_browse |
Anupama, B. Kaul Kowalczyk, Robert Megerian, Krikor von Allmen, Paul Richard, L. Baron |
| container_volume |
1081 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Anupama, B. Kaul |
| doi_str_mv |
10.1557/PROC-1081-P15-06 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
vertically aligned carbon nanotubes formed using dc pecvd as switching elements for extreme environment space electronics |
| title_auth |
Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| abstract |
Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. |
| abstractGer |
Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. |
| abstract_unstemmed |
Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics |
| url |
https://dx.doi.org/10.1557/PROC-1081-P15-06 |
| remote_bool |
true |
| author2 |
Kowalczyk, Robert Megerian, Krikor von Allmen, Paul Richard, L. Baron |
| author2Str |
Kowalczyk, Robert Megerian, Krikor von Allmen, Paul Richard, L. Baron |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-1081-P15-06 |
| up_date |
2024-07-04T01:49:48.092Z |
| _version_ |
1803611315207405568 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042378974</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112053559.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201212s2008 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-1081-P15-06</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042378974</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-1081-P15-06-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-1081-P15-06-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Anupama, B. Kaul</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kowalczyk, Robert</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Megerian, Krikor</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">von Allmen, Paul</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Richard, L. Baron</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">1081(2008), 1 vom: 01. Dez.</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1081</subfield><subfield code="g">year:2008</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-1081-P15-06</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1081</subfield><subfield code="j">2008</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield></datafield></record></collection>
|
| score |
7.39777 |