Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth
Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chopra, N. [verfasserIn] Kichambare, P. D. [verfasserIn] Andrews, R. [verfasserIn] Hinds, B. J. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2002 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 739(2002), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:739 ; year:2002 ; number:1 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-739-H7.6 |
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SPR042383390 |
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| 520 | |a Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. | ||
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| 700 | 1 | |a Hinds, B. J. |e verfasserin |4 aut | |
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10.1557/PROC-739-H7.6 doi (DE-627)SPR042383390 (DE-599)SPRPROC-739-H7.6-e (SPR)PROC-739-H7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Chopra, N. verfasserin aut Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth 2002 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. Kichambare, P. D. verfasserin aut Andrews, R. verfasserin aut Hinds, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 739(2002), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:739 year:2002 number:1 month:12 https://dx.doi.org/10.1557/PROC-739-H7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 739 2002 1 12 |
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10.1557/PROC-739-H7.6 doi (DE-627)SPR042383390 (DE-599)SPRPROC-739-H7.6-e (SPR)PROC-739-H7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Chopra, N. verfasserin aut Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth 2002 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. Kichambare, P. D. verfasserin aut Andrews, R. verfasserin aut Hinds, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 739(2002), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:739 year:2002 number:1 month:12 https://dx.doi.org/10.1557/PROC-739-H7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 739 2002 1 12 |
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10.1557/PROC-739-H7.6 doi (DE-627)SPR042383390 (DE-599)SPRPROC-739-H7.6-e (SPR)PROC-739-H7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Chopra, N. verfasserin aut Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth 2002 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. Kichambare, P. D. verfasserin aut Andrews, R. verfasserin aut Hinds, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 739(2002), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:739 year:2002 number:1 month:12 https://dx.doi.org/10.1557/PROC-739-H7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 739 2002 1 12 |
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10.1557/PROC-739-H7.6 doi (DE-627)SPR042383390 (DE-599)SPRPROC-739-H7.6-e (SPR)PROC-739-H7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Chopra, N. verfasserin aut Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth 2002 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. Kichambare, P. D. verfasserin aut Andrews, R. verfasserin aut Hinds, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 739(2002), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:739 year:2002 number:1 month:12 https://dx.doi.org/10.1557/PROC-739-H7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 739 2002 1 12 |
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10.1557/PROC-739-H7.6 doi (DE-627)SPR042383390 (DE-599)SPRPROC-739-H7.6-e (SPR)PROC-739-H7.6-e DE-627 ger DE-627 rakwb eng 670 ASE Chopra, N. verfasserin aut Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth 2002 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. Kichambare, P. D. verfasserin aut Andrews, R. verfasserin aut Hinds, B. J. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 739(2002), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:739 year:2002 number:1 month:12 https://dx.doi.org/10.1557/PROC-739-H7.6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 739 2002 1 12 |
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Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth |
| abstract |
Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. |
| abstractGer |
Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. |
| abstract_unstemmed |
Abstract Selective growth of carbon nano-tubes (CNT) on micron scale patterned substrates has been accomplished by taking advantage of the non-reactivity of ferrocene catalyst on H-terminated Si surfaces in a CVD process. Demonstrated here is that this phenomenon can be used to control the diameter of CNTs when sufficiently narrow lines of $ SiO_{2} $ surrounded by H-terminated Si are used. Narrow lines of $ SiO_{2} $ (12–60nm) are formed at the etched face of a Si/$ SiO_{2} $/Si multilayer structure. This allows the precisely controllable thickness of an $ SiO_{2} $ film to determine an exposed $ SiO_{2} $ line width. There is no need for e-beam lithography since film thickness determines nm-scale line dimensions. CNTs are then formed by CVD with a ferrocene/$ H_{2} $/Ar mixture at 700°C. CNTs are observed to grow only on the exposed $ SiO_{2} $ surface at the edge of the ‘mesa’ structure. CNT diameters of 13.2, 20.5, 34.2, 64.3nm are observed for $ SiO_{2} $ film thickness of 12, 19, 35, and 65 nm. The larger distribution of CNT diameter with increased line width is consistent with wider $ SiO_{2} $ linewidths not being able to affect smaller nucleation centers. These results are consistent with the use of self-assembly chemistry of iron catalyst onto nano-particles of catalyst support. |
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| title_short |
Simple Use of $ SiO_{2} $ Film Thickness for the Control of Carbon Nano-Tube Diameter During Ferrocene Catalyzed CVD Growth |
| url |
https://dx.doi.org/10.1557/PROC-739-H7.6 |
| remote_bool |
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| author2 |
Kichambare, P. D. Andrews, R. Hinds, B. J. |
| author2Str |
Kichambare, P. D. Andrews, R. Hinds, B. J. |
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| doi_str |
10.1557/PROC-739-H7.6 |
| up_date |
2024-07-04T01:50:42.290Z |
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7.3983116 |