Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering
Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bessa, V. L. [verfasserIn] De Morais, J. E. V. [verfasserIn] Oliveira, R. G. M. [verfasserIn] Freitas, D. B. [verfasserIn] Sales, J. C. [verfasserIn] Do Carmo, F. F. [verfasserIn] Silva, M. A. S. [verfasserIn] Gouveia, D. X. [verfasserIn] Sombra, A. S. B. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 31(2020), 24 vom: 02. Nov., Seite 22265-22273 |
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| Übergeordnetes Werk: |
volume:31 ; year:2020 ; number:24 ; day:02 ; month:11 ; pages:22265-22273 |
| Links: |
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| DOI / URN: |
10.1007/s10854-020-04727-3 |
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| Katalog-ID: |
SPR042415497 |
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| 245 | 1 | 0 | |a Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
| 264 | 1 | |c 2020 | |
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| 520 | |a Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. | ||
| 700 | 1 | |a De Morais, J. E. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Oliveira, R. G. M. |e verfasserin |4 aut | |
| 700 | 1 | |a Freitas, D. B. |e verfasserin |4 aut | |
| 700 | 1 | |a Sales, J. C. |e verfasserin |4 aut | |
| 700 | 1 | |a Do Carmo, F. F. |e verfasserin |4 aut | |
| 700 | 1 | |a Silva, M. A. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Gouveia, D. X. |e verfasserin |4 aut | |
| 700 | 1 | |a Sombra, A. S. B. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 |g 31(2020), 24 vom: 02. Nov., Seite 22265-22273 |w (DE-627)317827154 |w (DE-600)2016994-2 |x 1573-482X |7 nnns |
| 773 | 1 | 8 | |g volume:31 |g year:2020 |g number:24 |g day:02 |g month:11 |g pages:22265-22273 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10854-020-04727-3 |z lizenzpflichtig |3 Volltext |
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10.1007/s10854-020-04727-3 doi (DE-627)SPR042415497 (DE-599)SPRs10854-020-04727-3-e (SPR)s10854-020-04727-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Bessa, V. L. verfasserin aut Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. De Morais, J. E. V. verfasserin aut Oliveira, R. G. M. verfasserin aut Freitas, D. B. verfasserin aut Sales, J. C. verfasserin aut Do Carmo, F. F. verfasserin aut Silva, M. A. S. verfasserin aut Gouveia, D. X. verfasserin aut Sombra, A. S. B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 31(2020), 24 vom: 02. Nov., Seite 22265-22273 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:31 year:2020 number:24 day:02 month:11 pages:22265-22273 https://dx.doi.org/10.1007/s10854-020-04727-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 31 2020 24 02 11 22265-22273 |
| spelling |
10.1007/s10854-020-04727-3 doi (DE-627)SPR042415497 (DE-599)SPRs10854-020-04727-3-e (SPR)s10854-020-04727-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Bessa, V. L. verfasserin aut Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. De Morais, J. E. V. verfasserin aut Oliveira, R. G. M. verfasserin aut Freitas, D. B. verfasserin aut Sales, J. C. verfasserin aut Do Carmo, F. F. verfasserin aut Silva, M. A. S. verfasserin aut Gouveia, D. X. verfasserin aut Sombra, A. S. B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 31(2020), 24 vom: 02. Nov., Seite 22265-22273 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:31 year:2020 number:24 day:02 month:11 pages:22265-22273 https://dx.doi.org/10.1007/s10854-020-04727-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 31 2020 24 02 11 22265-22273 |
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10.1007/s10854-020-04727-3 doi (DE-627)SPR042415497 (DE-599)SPRs10854-020-04727-3-e (SPR)s10854-020-04727-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Bessa, V. L. verfasserin aut Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. De Morais, J. E. V. verfasserin aut Oliveira, R. G. M. verfasserin aut Freitas, D. B. verfasserin aut Sales, J. C. verfasserin aut Do Carmo, F. F. verfasserin aut Silva, M. A. S. verfasserin aut Gouveia, D. X. verfasserin aut Sombra, A. S. B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 31(2020), 24 vom: 02. Nov., Seite 22265-22273 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:31 year:2020 number:24 day:02 month:11 pages:22265-22273 https://dx.doi.org/10.1007/s10854-020-04727-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 31 2020 24 02 11 22265-22273 |
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10.1007/s10854-020-04727-3 doi (DE-627)SPR042415497 (DE-599)SPRs10854-020-04727-3-e (SPR)s10854-020-04727-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Bessa, V. L. verfasserin aut Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. De Morais, J. E. V. verfasserin aut Oliveira, R. G. M. verfasserin aut Freitas, D. B. verfasserin aut Sales, J. C. verfasserin aut Do Carmo, F. F. verfasserin aut Silva, M. A. S. verfasserin aut Gouveia, D. X. verfasserin aut Sombra, A. S. B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 31(2020), 24 vom: 02. Nov., Seite 22265-22273 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:31 year:2020 number:24 day:02 month:11 pages:22265-22273 https://dx.doi.org/10.1007/s10854-020-04727-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 31 2020 24 02 11 22265-22273 |
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10.1007/s10854-020-04727-3 doi (DE-627)SPR042415497 (DE-599)SPRs10854-020-04727-3-e (SPR)s10854-020-04727-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Bessa, V. L. verfasserin aut Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering 2020 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. De Morais, J. E. V. verfasserin aut Oliveira, R. G. M. verfasserin aut Freitas, D. B. verfasserin aut Sales, J. C. verfasserin aut Do Carmo, F. F. verfasserin aut Silva, M. A. S. verfasserin aut Gouveia, D. X. verfasserin aut Sombra, A. S. B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 31(2020), 24 vom: 02. Nov., Seite 22265-22273 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:31 year:2020 number:24 day:02 month:11 pages:22265-22273 https://dx.doi.org/10.1007/s10854-020-04727-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 31 2020 24 02 11 22265-22273 |
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Bessa, V. L. @@aut@@ De Morais, J. E. V. @@aut@@ Oliveira, R. G. M. @@aut@@ Freitas, D. B. @@aut@@ Sales, J. C. @@aut@@ Do Carmo, F. F. @@aut@@ Silva, M. A. S. @@aut@@ Gouveia, D. X. @@aut@@ Sombra, A. S. B. @@aut@@ |
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L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">De Morais, J. E. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Oliveira, R. G. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Freitas, D. B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sales, J. C.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Do Carmo, F. F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Silva, M. A. 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Bessa, V. L. |
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Bessa, V. L. ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
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Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
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Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
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Bessa, V. L. De Morais, J. E. V. Oliveira, R. G. M. Freitas, D. B. Sales, J. C. Do Carmo, F. F. Silva, M. A. S. Gouveia, D. X. Sombra, A. S. B. |
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Bessa, V. L. |
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enhancing the electrical properties of $ bi_{4} %$ ti_{3} %$ o_{12} $ (bit) matrix by special alloying and sintering |
| title_auth |
Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
| abstract |
Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. |
| abstractGer |
Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. |
| abstract_unstemmed |
Abstract In this work, the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) were investigated; those presenting interesting electrical and dielectric properties in the radiofrequency (RF) and microwave (MW) range were analysed. BiT has many applications in telecommunication systems and MW circuits. It was synthesized by the solid-state reaction method, and X-ray diffraction was used for structural characterization of this phase. The properties in the RF range were measured by impedance spectroscopy. An imaginary impedance relaxation peak and high values for real impedance were found. The complex impedance plane plots show the presence of a semicircle that was adjusted by an R-CPE circuit, presenting a thermoactive process for the load carriers. The dielectric properties in the MW range were measured using the Hakki–Coleman method, and the thermal stability was measured using the Silva–Fernandes–Sombra (SFS) technique. BiT was tested as an antenna and distant field parameters were measured and simulated. |
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Enhancing the electrical properties of $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BiT) matrix by special alloying and sintering |
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De Morais, J. E. V. Oliveira, R. G. M. Freitas, D. B. Sales, J. C. Do Carmo, F. F. Silva, M. A. S. Gouveia, D. X. Sombra, A. S. B. |
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De Morais, J. E. V. Oliveira, R. G. M. Freitas, D. B. Sales, J. C. Do Carmo, F. F. Silva, M. A. S. Gouveia, D. X. Sombra, A. S. B. |
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| score |
7.4012136 |