Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $
Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/S...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhong, Rong [verfasserIn] Wiezorek, Jorg M. K. [verfasserIn] Leonard, John P. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 990(2006), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:990 ; year:2006 ; number:1 ; month:12 |
| Links: |
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| DOI / URN: |
10.1557/PROC-0990-B09-07 |
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| 520 | |a Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. | ||
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10.1557/PROC-0990-B09-07 doi (DE-627)SPR042433304 (DE-599)SPRPROC-0990-B09-07-e (SPR)PROC-0990-B09-07-e DE-627 ger DE-627 rakwb eng 670 ASE Zhong, Rong verfasserin aut Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $ 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. Wiezorek, Jorg M. K. verfasserin aut Leonard, John P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 990(2006), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:990 year:2006 number:1 month:12 https://dx.doi.org/10.1557/PROC-0990-B09-07 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 990 2006 1 12 |
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10.1557/PROC-0990-B09-07 doi (DE-627)SPR042433304 (DE-599)SPRPROC-0990-B09-07-e (SPR)PROC-0990-B09-07-e DE-627 ger DE-627 rakwb eng 670 ASE Zhong, Rong verfasserin aut Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $ 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. Wiezorek, Jorg M. K. verfasserin aut Leonard, John P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 990(2006), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:990 year:2006 number:1 month:12 https://dx.doi.org/10.1557/PROC-0990-B09-07 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 990 2006 1 12 |
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10.1557/PROC-0990-B09-07 doi (DE-627)SPR042433304 (DE-599)SPRPROC-0990-B09-07-e (SPR)PROC-0990-B09-07-e DE-627 ger DE-627 rakwb eng 670 ASE Zhong, Rong verfasserin aut Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $ 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. Wiezorek, Jorg M. K. verfasserin aut Leonard, John P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 990(2006), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:990 year:2006 number:1 month:12 https://dx.doi.org/10.1557/PROC-0990-B09-07 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 990 2006 1 12 |
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10.1557/PROC-0990-B09-07 doi (DE-627)SPR042433304 (DE-599)SPRPROC-0990-B09-07-e (SPR)PROC-0990-B09-07-e DE-627 ger DE-627 rakwb eng 670 ASE Zhong, Rong verfasserin aut Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $ 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. Wiezorek, Jorg M. K. verfasserin aut Leonard, John P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 990(2006), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:990 year:2006 number:1 month:12 https://dx.doi.org/10.1557/PROC-0990-B09-07 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 990 2006 1 12 |
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Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. |
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Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. |
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Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042433304</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112053449.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201217s2006 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-0990-B09-07</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042433304</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-0990-B09-07-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-0990-B09-07-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhong, Rong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Laser-Induced Microstructural Modification of Polycrystalline Cu and Ag Films Encapsulated in $ SiO_{2} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2006</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Excimer-laser-induced rapid lateral solidification was used to produce large grain microstructures in copper and silver thin films. These were multilayer thin film structures consisting of sputter deposited copper and silver thin films encapsulated by silica ($ SiO_{2} $/metal/$ SiO_{2} $/Si substrate). In this process, a single excimer laser pulse and projection imaging optics were used to melt a 60 micron wide line in the metal film. The resolidification of the melted lines is found to occur laterally in the plane of the film, resulting in grains greater than 20 um in length and 1 um wide. Electron diffraction analysis allowed identification of a strong <001> texture in the growth direction along the major axis of the elongated grains as well as similar texture parallel to the film surface. Various dislocation and faulted defect structures are identified and examined in the context of the rapid solidification and potential application to interconnects.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wiezorek, Jorg M. K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Leonard, John P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">990(2006), 1 vom: Dez.</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:990</subfield><subfield code="g">year:2006</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-0990-B09-07</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">990</subfield><subfield code="j">2006</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield></datafield></record></collection>
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