Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates
Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {1...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nishino, S. [verfasserIn] Nishiguchi, T. [verfasserIn] Masuda, Y. [verfasserIn] Sasaki, M. [verfasserIn] Ohshima, S. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2000 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 640(2000), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:640 ; year:2000 ; number:1 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-640-H5.5 |
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SPR04243873X |
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| 520 | |a Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. | ||
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| 700 | 1 | |a Masuda, Y. |e verfasserin |4 aut | |
| 700 | 1 | |a Sasaki, M. |e verfasserin |4 aut | |
| 700 | 1 | |a Ohshima, S. |e verfasserin |4 aut | |
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10.1557/PROC-640-H5.5 doi (DE-627)SPR04243873X (DE-599)SPRPROC-640-H5.5-e (SPR)PROC-640-H5.5-e DE-627 ger DE-627 rakwb eng 670 ASE Nishino, S. verfasserin aut Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. Nishiguchi, T. verfasserin aut Masuda, Y. verfasserin aut Sasaki, M. verfasserin aut Ohshima, S. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 640(2000), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:640 year:2000 number:1 month:12 https://dx.doi.org/10.1557/PROC-640-H5.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 640 2000 1 12 |
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10.1557/PROC-640-H5.5 doi (DE-627)SPR04243873X (DE-599)SPRPROC-640-H5.5-e (SPR)PROC-640-H5.5-e DE-627 ger DE-627 rakwb eng 670 ASE Nishino, S. verfasserin aut Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. Nishiguchi, T. verfasserin aut Masuda, Y. verfasserin aut Sasaki, M. verfasserin aut Ohshima, S. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 640(2000), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:640 year:2000 number:1 month:12 https://dx.doi.org/10.1557/PROC-640-H5.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 640 2000 1 12 |
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10.1557/PROC-640-H5.5 doi (DE-627)SPR04243873X (DE-599)SPRPROC-640-H5.5-e (SPR)PROC-640-H5.5-e DE-627 ger DE-627 rakwb eng 670 ASE Nishino, S. verfasserin aut Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. Nishiguchi, T. verfasserin aut Masuda, Y. verfasserin aut Sasaki, M. verfasserin aut Ohshima, S. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 640(2000), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:640 year:2000 number:1 month:12 https://dx.doi.org/10.1557/PROC-640-H5.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 640 2000 1 12 |
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10.1557/PROC-640-H5.5 doi (DE-627)SPR04243873X (DE-599)SPRPROC-640-H5.5-e (SPR)PROC-640-H5.5-e DE-627 ger DE-627 rakwb eng 670 ASE Nishino, S. verfasserin aut Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. Nishiguchi, T. verfasserin aut Masuda, Y. verfasserin aut Sasaki, M. verfasserin aut Ohshima, S. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 640(2000), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:640 year:2000 number:1 month:12 https://dx.doi.org/10.1557/PROC-640-H5.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 640 2000 1 12 |
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10.1557/PROC-640-H5.5 doi (DE-627)SPR04243873X (DE-599)SPRPROC-640-H5.5-e (SPR)PROC-640-H5.5-e DE-627 ger DE-627 rakwb eng 670 ASE Nishino, S. verfasserin aut Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates 2000 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. Nishiguchi, T. verfasserin aut Masuda, Y. verfasserin aut Sasaki, M. verfasserin aut Ohshima, S. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 640(2000), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:640 year:2000 number:1 month:12 https://dx.doi.org/10.1557/PROC-640-H5.5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 640 2000 1 12 |
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Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates |
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Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. |
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Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. |
| abstract_unstemmed |
Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR04243873X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052823.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201218s2000 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-640-H5.5</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR04243873X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-640-H5.5-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-640-H5.5-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nishino, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Sublimation growth of 6H-SiC was performed on {11¯00} and {112¯0} substrates. The difference between the growth on {11¯00} plane and {112¯0} plane was observed. {11¯00} facet was almost flat and there were grooves oriented toward <112¯0> direction. The step bunching was observed on {11¯00} plane 5° off-axis. A lot of pits were introduced on {112¯0} plane of the crystal grown both on {11¯00} and {112¯0} substrates. Step flow growth toward <112¯0> direction created the pits on {112¯0} plane. It was important to grow crystal by layer by layer growth on {112¯0} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {112¯0} plane may be reduced as same as CVD growth on {112¯0} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nishiguchi, T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Masuda, Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sasaki, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ohshima, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">640(2000), 1 vom: Dez.</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:640</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-640-H5.5</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">640</subfield><subfield code="j">2000</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield></datafield></record></collection>
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