Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells
Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the abilit...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jiang, Qiwei [verfasserIn] Qiu, Yongcai [verfasserIn] Yan, Keyou [verfasserIn] Xiao, Junwu [verfasserIn] Yang, Shihe [verfasserIn] |
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| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Übergeordnetes Werk: |
Enthalten in: MRS communications - Berlin : Springer, 2011, 2(2012), 3 vom: 01. Sept., Seite 97-99 |
|---|---|
| Übergeordnetes Werk: |
volume:2 ; year:2012 ; number:3 ; day:01 ; month:09 ; pages:97-99 |
| Links: |
|---|
| DOI / URN: |
10.1557/mrc.2012.16 |
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| Katalog-ID: |
SPR042504031 |
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| 520 | |a Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. | ||
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| 700 | 1 | |a Yang, Shihe |e verfasserin |4 aut | |
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10.1557/mrc.2012.16 doi (DE-627)SPR042504031 (DE-599)SPRmrc.2012.16-e (SPR)mrc.2012.16-e DE-627 ger DE-627 rakwb eng 670 ASE Jiang, Qiwei verfasserin aut Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. Qiu, Yongcai verfasserin aut Yan, Keyou verfasserin aut Xiao, Junwu verfasserin aut Yang, Shihe verfasserin aut Enthalten in MRS communications Berlin : Springer, 2011 2(2012), 3 vom: 01. Sept., Seite 97-99 (DE-627)683366432 (DE-600)2645443-9 2159-6867 nnns volume:2 year:2012 number:3 day:01 month:09 pages:97-99 https://dx.doi.org/10.1557/mrc.2012.16 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_165 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2088 GBV_ILN_2089 GBV_ILN_2093 GBV_ILN_2098 GBV_ILN_2107 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2145 GBV_ILN_2158 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2924 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 2 2012 3 01 09 97-99 |
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10.1557/mrc.2012.16 doi (DE-627)SPR042504031 (DE-599)SPRmrc.2012.16-e (SPR)mrc.2012.16-e DE-627 ger DE-627 rakwb eng 670 ASE Jiang, Qiwei verfasserin aut Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. Qiu, Yongcai verfasserin aut Yan, Keyou verfasserin aut Xiao, Junwu verfasserin aut Yang, Shihe verfasserin aut Enthalten in MRS communications Berlin : Springer, 2011 2(2012), 3 vom: 01. Sept., Seite 97-99 (DE-627)683366432 (DE-600)2645443-9 2159-6867 nnns volume:2 year:2012 number:3 day:01 month:09 pages:97-99 https://dx.doi.org/10.1557/mrc.2012.16 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_165 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2088 GBV_ILN_2089 GBV_ILN_2093 GBV_ILN_2098 GBV_ILN_2107 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2145 GBV_ILN_2158 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2924 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 2 2012 3 01 09 97-99 |
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10.1557/mrc.2012.16 doi (DE-627)SPR042504031 (DE-599)SPRmrc.2012.16-e (SPR)mrc.2012.16-e DE-627 ger DE-627 rakwb eng 670 ASE Jiang, Qiwei verfasserin aut Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. Qiu, Yongcai verfasserin aut Yan, Keyou verfasserin aut Xiao, Junwu verfasserin aut Yang, Shihe verfasserin aut Enthalten in MRS communications Berlin : Springer, 2011 2(2012), 3 vom: 01. Sept., Seite 97-99 (DE-627)683366432 (DE-600)2645443-9 2159-6867 nnns volume:2 year:2012 number:3 day:01 month:09 pages:97-99 https://dx.doi.org/10.1557/mrc.2012.16 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_165 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2088 GBV_ILN_2089 GBV_ILN_2093 GBV_ILN_2098 GBV_ILN_2107 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2145 GBV_ILN_2158 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2924 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 2 2012 3 01 09 97-99 |
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10.1557/mrc.2012.16 doi (DE-627)SPR042504031 (DE-599)SPRmrc.2012.16-e (SPR)mrc.2012.16-e DE-627 ger DE-627 rakwb eng 670 ASE Jiang, Qiwei verfasserin aut Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. Qiu, Yongcai verfasserin aut Yan, Keyou verfasserin aut Xiao, Junwu verfasserin aut Yang, Shihe verfasserin aut Enthalten in MRS communications Berlin : Springer, 2011 2(2012), 3 vom: 01. Sept., Seite 97-99 (DE-627)683366432 (DE-600)2645443-9 2159-6867 nnns volume:2 year:2012 number:3 day:01 month:09 pages:97-99 https://dx.doi.org/10.1557/mrc.2012.16 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_165 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2088 GBV_ILN_2089 GBV_ILN_2093 GBV_ILN_2098 GBV_ILN_2107 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2145 GBV_ILN_2158 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2924 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 2 2012 3 01 09 97-99 |
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10.1557/mrc.2012.16 doi (DE-627)SPR042504031 (DE-599)SPRmrc.2012.16-e (SPR)mrc.2012.16-e DE-627 ger DE-627 rakwb eng 670 ASE Jiang, Qiwei verfasserin aut Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. Qiu, Yongcai verfasserin aut Yan, Keyou verfasserin aut Xiao, Junwu verfasserin aut Yang, Shihe verfasserin aut Enthalten in MRS communications Berlin : Springer, 2011 2(2012), 3 vom: 01. Sept., Seite 97-99 (DE-627)683366432 (DE-600)2645443-9 2159-6867 nnns volume:2 year:2012 number:3 day:01 month:09 pages:97-99 https://dx.doi.org/10.1557/mrc.2012.16 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_165 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_636 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2088 GBV_ILN_2089 GBV_ILN_2093 GBV_ILN_2098 GBV_ILN_2107 GBV_ILN_2110 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2145 GBV_ILN_2158 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2924 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 2 2012 3 01 09 97-99 |
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Jiang, Qiwei @@aut@@ Qiu, Yongcai @@aut@@ Yan, Keyou @@aut@@ Xiao, Junwu @@aut@@ Yang, Shihe @@aut@@ |
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2012-09-01T00:00:00Z |
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self-assembly of $ ni_{2} $p nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells |
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Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells |
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Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. |
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Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. |
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Abstract We report an easy way to assemble porous one-dimensional (1D) $ Ni_{2} $P nanowires through phosphatization of a Ni($ SO_{4} $)0.3(OH)1.4 nanobelt precursor. The peculiar synthetic process endows the $ Ni_{2} $P nanowires with large surface area, hierarchical porous structure and the ability to form closely connected network for transporting both electrons and electrolytes, which in conjunction with the high intrinsic electrocatalytic activity make it an excellent low-cost counter electrode material for dye-sensitized solar cells (DSSCs). Indeed, the first investigation of such novel counter electrode for DSSC presented superb photovoltaic performance rivaling the conventional Pt counter electrode. |
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Self-assembly of $ Ni_{2} $P nanowires as high-efficiency electrocatalyst for dye-sensitized solar cells |
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