The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffec...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Filippov, K.A. [verfasserIn] Balandin, A.A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2003

Übergeordnetes Werk:	Enthalten in: MRS Internet Journal of Nitride Semiconductor Research - Springer International Publishing, 2020, 8(2003), 1 vom: 01. Dez.
Übergeordnetes Werk:	volume:8 ; year:2003 ; number:1 ; day:01 ; month:12

Links:	Volltext

DOI / URN:	10.1557/S1092578300000478

Katalog-ID:	SPR042505011

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allfields	10.1557/S1092578300000478 doi (DE-627)SPR042505011 (DE-599)SPRS1092578300000478-e (SPR)S1092578300000478-e DE-627 ger DE-627 rakwb eng Filippov, K.A. verfasserin aut The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel. Balandin, A.A. verfasserin aut Enthalten in MRS Internet Journal of Nitride Semiconductor Research Springer International Publishing, 2020 8(2003), 1 vom: 01. Dez. (DE-627)318202883 (DE-600)2021992-1 1092-5783 nnns volume:8 year:2003 number:1 day:01 month:12 https://dx.doi.org/10.1557/S1092578300000478 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2190 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2003 1 01 12
spelling	10.1557/S1092578300000478 doi (DE-627)SPR042505011 (DE-599)SPRS1092578300000478-e (SPR)S1092578300000478-e DE-627 ger DE-627 rakwb eng Filippov, K.A. verfasserin aut The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel. Balandin, A.A. verfasserin aut Enthalten in MRS Internet Journal of Nitride Semiconductor Research Springer International Publishing, 2020 8(2003), 1 vom: 01. Dez. (DE-627)318202883 (DE-600)2021992-1 1092-5783 nnns volume:8 year:2003 number:1 day:01 month:12 https://dx.doi.org/10.1557/S1092578300000478 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2190 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2003 1 01 12
allfields_unstemmed	10.1557/S1092578300000478 doi (DE-627)SPR042505011 (DE-599)SPRS1092578300000478-e (SPR)S1092578300000478-e DE-627 ger DE-627 rakwb eng Filippov, K.A. verfasserin aut The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel. Balandin, A.A. verfasserin aut Enthalten in MRS Internet Journal of Nitride Semiconductor Research Springer International Publishing, 2020 8(2003), 1 vom: 01. Dez. (DE-627)318202883 (DE-600)2021992-1 1092-5783 nnns volume:8 year:2003 number:1 day:01 month:12 https://dx.doi.org/10.1557/S1092578300000478 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2190 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2003 1 01 12
allfieldsGer	10.1557/S1092578300000478 doi (DE-627)SPR042505011 (DE-599)SPRS1092578300000478-e (SPR)S1092578300000478-e DE-627 ger DE-627 rakwb eng Filippov, K.A. verfasserin aut The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel. Balandin, A.A. verfasserin aut Enthalten in MRS Internet Journal of Nitride Semiconductor Research Springer International Publishing, 2020 8(2003), 1 vom: 01. Dez. (DE-627)318202883 (DE-600)2021992-1 1092-5783 nnns volume:8 year:2003 number:1 day:01 month:12 https://dx.doi.org/10.1557/S1092578300000478 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2190 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2003 1 01 12
allfieldsSound	10.1557/S1092578300000478 doi (DE-627)SPR042505011 (DE-599)SPRS1092578300000478-e (SPR)S1092578300000478-e DE-627 ger DE-627 rakwb eng Filippov, K.A. verfasserin aut The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 2003 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel. Balandin, A.A. verfasserin aut Enthalten in MRS Internet Journal of Nitride Semiconductor Research Springer International Publishing, 2020 8(2003), 1 vom: 01. Dez. (DE-627)318202883 (DE-600)2021992-1 1092-5783 nnns volume:8 year:2003 number:1 day:01 month:12 https://dx.doi.org/10.1557/S1092578300000478 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_213 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2014 GBV_ILN_2190 GBV_ILN_2522 GBV_ILN_4012 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4249 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4367 GBV_ILN_4700 AR 8 2003 1 01 12
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author	Filippov, K.A.
spellingShingle	Filippov, K.A. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
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topic_title	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
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title	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
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title_full	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
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author_browse	Filippov, K.A. Balandin, A.A.
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title_sort	effect of the thermal boundary resistance on self-heating of algan/gan hfets
title_auth	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
abstract	Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.
abstractGer	Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.
abstract_unstemmed	Abstract We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure fieldeffect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.
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title_short	The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
url	https://dx.doi.org/10.1557/S1092578300000478
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