Diamond Doping by Low Energy Ion Implantation During Growth
Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sa...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jamison, K.D. [verfasserIn] Schmidt, H.K. [verfasserIn] Eisenmann, D. [verfasserIn] Hellmer, R.P. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 302(1993), 1 vom: 01. Dez., Seite 251-256 |
|---|---|
| Übergeordnetes Werk: |
volume:302 ; year:1993 ; number:1 ; day:01 ; month:12 ; pages:251-256 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-302-251 |
|---|
| Katalog-ID: |
SPR042668174 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR042668174 | ||
| 003 | DE-627 | ||
| 005 | 20220112051927.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210112s1993 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-302-251 |2 doi | |
| 035 | |a (DE-627)SPR042668174 | ||
| 035 | |a (DE-599)SPRPROC-302-251-e | ||
| 035 | |a (SPR)PROC-302-251-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Jamison, K.D. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Diamond Doping by Low Energy Ion Implantation During Growth |
| 264 | 1 | |c 1993 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. | ||
| 700 | 1 | |a Schmidt, H.K. |e verfasserin |4 aut | |
| 700 | 1 | |a Eisenmann, D. |e verfasserin |4 aut | |
| 700 | 1 | |a Hellmer, R.P. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 302(1993), 1 vom: 01. Dez., Seite 251-256 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:302 |g year:1993 |g number:1 |g day:01 |g month:12 |g pages:251-256 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-302-251 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 302 |j 1993 |e 1 |b 01 |c 12 |h 251-256 | ||
| author_variant |
k j kj h s hs d e de r h rh |
|---|---|
| matchkey_str |
article:19464274:1993----::imndpnblwnryoipatt |
| hierarchy_sort_str |
1993 |
| publishDate |
1993 |
| allfields |
10.1557/PROC-302-251 doi (DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e DE-627 ger DE-627 rakwb eng 670 ASE Jamison, K.D. verfasserin aut Diamond Doping by Low Energy Ion Implantation During Growth 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. Schmidt, H.K. verfasserin aut Eisenmann, D. verfasserin aut Hellmer, R.P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 302(1993), 1 vom: 01. Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:302 year:1993 number:1 day:01 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-302-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 302 1993 1 01 12 251-256 |
| spelling |
10.1557/PROC-302-251 doi (DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e DE-627 ger DE-627 rakwb eng 670 ASE Jamison, K.D. verfasserin aut Diamond Doping by Low Energy Ion Implantation During Growth 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. Schmidt, H.K. verfasserin aut Eisenmann, D. verfasserin aut Hellmer, R.P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 302(1993), 1 vom: 01. Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:302 year:1993 number:1 day:01 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-302-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 302 1993 1 01 12 251-256 |
| allfields_unstemmed |
10.1557/PROC-302-251 doi (DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e DE-627 ger DE-627 rakwb eng 670 ASE Jamison, K.D. verfasserin aut Diamond Doping by Low Energy Ion Implantation During Growth 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. Schmidt, H.K. verfasserin aut Eisenmann, D. verfasserin aut Hellmer, R.P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 302(1993), 1 vom: 01. Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:302 year:1993 number:1 day:01 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-302-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 302 1993 1 01 12 251-256 |
| allfieldsGer |
10.1557/PROC-302-251 doi (DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e DE-627 ger DE-627 rakwb eng 670 ASE Jamison, K.D. verfasserin aut Diamond Doping by Low Energy Ion Implantation During Growth 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. Schmidt, H.K. verfasserin aut Eisenmann, D. verfasserin aut Hellmer, R.P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 302(1993), 1 vom: 01. Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:302 year:1993 number:1 day:01 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-302-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 302 1993 1 01 12 251-256 |
| allfieldsSound |
10.1557/PROC-302-251 doi (DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e DE-627 ger DE-627 rakwb eng 670 ASE Jamison, K.D. verfasserin aut Diamond Doping by Low Energy Ion Implantation During Growth 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. Schmidt, H.K. verfasserin aut Eisenmann, D. verfasserin aut Hellmer, R.P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 302(1993), 1 vom: 01. Dez., Seite 251-256 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:302 year:1993 number:1 day:01 month:12 pages:251-256 https://dx.doi.org/10.1557/PROC-302-251 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 302 1993 1 01 12 251-256 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 302(1993), 1 vom: 01. Dez., Seite 251-256 volume:302 year:1993 number:1 day:01 month:12 pages:251-256 |
| sourceStr |
Enthalten in MRS online proceedings library 302(1993), 1 vom: 01. Dez., Seite 251-256 volume:302 year:1993 number:1 day:01 month:12 pages:251-256 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Jamison, K.D. @@aut@@ Schmidt, H.K. @@aut@@ Eisenmann, D. @@aut@@ Hellmer, R.P. @@aut@@ |
| publishDateDaySort_date |
1993-12-01T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR042668174 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042668174</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051927.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210112s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-302-251</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042668174</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-302-251-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-302-251-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jamison, K.D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Diamond Doping by Low Energy Ion Implantation During Growth</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schmidt, H.K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eisenmann, D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hellmer, R.P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">302(1993), 1 vom: 01. Dez., Seite 251-256</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:302</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:251-256</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-302-251</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">302</subfield><subfield code="j">1993</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">251-256</subfield></datafield></record></collection>
|
| author |
Jamison, K.D. |
| spellingShingle |
Jamison, K.D. ddc 670 Diamond Doping by Low Energy Ion Implantation During Growth |
| authorStr |
Jamison, K.D. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE Diamond Doping by Low Energy Ion Implantation During Growth |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
Diamond Doping by Low Energy Ion Implantation During Growth |
| ctrlnum |
(DE-627)SPR042668174 (DE-599)SPRPROC-302-251-e (SPR)PROC-302-251-e |
| title_full |
Diamond Doping by Low Energy Ion Implantation During Growth |
| author_sort |
Jamison, K.D. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1993 |
| contenttype_str_mv |
txt |
| container_start_page |
251 |
| author_browse |
Jamison, K.D. Schmidt, H.K. Eisenmann, D. Hellmer, R.P. |
| container_volume |
302 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Jamison, K.D. |
| doi_str_mv |
10.1557/PROC-302-251 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
diamond doping by low energy ion implantation during growth |
| title_auth |
Diamond Doping by Low Energy Ion Implantation During Growth |
| abstract |
Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. |
| abstractGer |
Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. |
| abstract_unstemmed |
Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
Diamond Doping by Low Energy Ion Implantation During Growth |
| url |
https://dx.doi.org/10.1557/PROC-302-251 |
| remote_bool |
true |
| author2 |
Schmidt, H.K. Eisenmann, D. Hellmer, R.P. |
| author2Str |
Schmidt, H.K. Eisenmann, D. Hellmer, R.P. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-302-251 |
| up_date |
2024-07-03T14:10:17.951Z |
| _version_ |
1803567306323787776 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042668174</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051927.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210112s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-302-251</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042668174</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-302-251-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-302-251-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jamison, K.D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Diamond Doping by Low Energy Ion Implantation During Growth</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A novel method of implanting dopant material in diamond using low energy ions during growth is described. In this method, relatively low energy (~10 KeV) dopant ions are directed through an aperture into a hot filament chemical vapor deposition growth chamber and onto the growing diamond sample. Collisions with the gas molecules in the growth chamber (~10 Torr of a 99.5% $ H_{2} $ - 0.5% $ ch_{4} $ gas mixture) partially neutralize the ion beam and slow the dopant atoms down to a few hundred electron volts before striking the growing diamond crystal. The residual energy is large enough to embed the dopant atoms a few layers deep in the crystal but not large enough to cause significant lattice damage. Continued doping during growth yields uniformly doped material throughout the implanted region. Results for sodium, rubidium, and phosphorus atom doping are presented with sodium found to be a p-type dopant and phosphorus a deep n-type dopant.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schmidt, H.K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Eisenmann, D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hellmer, R.P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">302(1993), 1 vom: 01. Dez., Seite 251-256</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:302</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1</subfield><subfield code="g">day:01</subfield><subfield code="g">month:12</subfield><subfield code="g">pages:251-256</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-302-251</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">302</subfield><subfield code="j">1993</subfield><subfield code="e">1</subfield><subfield code="b">01</subfield><subfield code="c">12</subfield><subfield code="h">251-256</subfield></datafield></record></collection>
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