The Precipitation of Nickel and Copper at Grain Boundaries in Silicon
Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Möller, H. J. [verfasserIn] Jendrich, U. [verfasserIn] Huang, L. [verfasserIn] Foitzik, A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1990 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 209(1990), 1 vom: 15. Okt., Seite 409-414 |
|---|---|
| Übergeordnetes Werk: |
volume:209 ; year:1990 ; number:1 ; day:15 ; month:10 ; pages:409-414 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-209-409 |
|---|
| Katalog-ID: |
SPR042725461 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | SPR042725461 | ||
| 003 | DE-627 | ||
| 005 | 20220112051708.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210118s1990 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1557/PROC-209-409 |2 doi | |
| 035 | |a (DE-627)SPR042725461 | ||
| 035 | |a (DE-599)SPRPROC-209-409-e | ||
| 035 | |a (SPR)PROC-209-409-e | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q ASE |
| 100 | 1 | |a Möller, H. J. |e verfasserin |4 aut | |
| 245 | 1 | 4 | |a The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| 264 | 1 | |c 1990 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. | ||
| 700 | 1 | |a Jendrich, U. |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, L. |e verfasserin |4 aut | |
| 700 | 1 | |a Foitzik, A. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t MRS online proceedings library |d Warrendale, Pa. : MRS, 1998 |g 209(1990), 1 vom: 15. Okt., Seite 409-414 |w (DE-627)57782046X |w (DE-600)2451008-7 |x 1946-4274 |7 nnns |
| 773 | 1 | 8 | |g volume:209 |g year:1990 |g number:1 |g day:15 |g month:10 |g pages:409-414 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1557/PROC-209-409 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_SPRINGER | ||
| 912 | |a GBV_ILN_2005 | ||
| 951 | |a AR | ||
| 952 | |d 209 |j 1990 |e 1 |b 15 |c 10 |h 409-414 | ||
| author_variant |
h j m hj hjm u j uj l h lh a f af |
|---|---|
| matchkey_str |
article:19464274:1990----::hpeiiainfiklncpeagano |
| hierarchy_sort_str |
1990 |
| publishDate |
1990 |
| allfields |
10.1557/PROC-209-409 doi (DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e DE-627 ger DE-627 rakwb eng 670 ASE Möller, H. J. verfasserin aut The Precipitation of Nickel and Copper at Grain Boundaries in Silicon 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. Jendrich, U. verfasserin aut Huang, L. verfasserin aut Foitzik, A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 409-414 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:409-414 https://dx.doi.org/10.1557/PROC-209-409 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 409-414 |
| spelling |
10.1557/PROC-209-409 doi (DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e DE-627 ger DE-627 rakwb eng 670 ASE Möller, H. J. verfasserin aut The Precipitation of Nickel and Copper at Grain Boundaries in Silicon 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. Jendrich, U. verfasserin aut Huang, L. verfasserin aut Foitzik, A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 409-414 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:409-414 https://dx.doi.org/10.1557/PROC-209-409 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 409-414 |
| allfields_unstemmed |
10.1557/PROC-209-409 doi (DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e DE-627 ger DE-627 rakwb eng 670 ASE Möller, H. J. verfasserin aut The Precipitation of Nickel and Copper at Grain Boundaries in Silicon 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. Jendrich, U. verfasserin aut Huang, L. verfasserin aut Foitzik, A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 409-414 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:409-414 https://dx.doi.org/10.1557/PROC-209-409 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 409-414 |
| allfieldsGer |
10.1557/PROC-209-409 doi (DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e DE-627 ger DE-627 rakwb eng 670 ASE Möller, H. J. verfasserin aut The Precipitation of Nickel and Copper at Grain Boundaries in Silicon 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. Jendrich, U. verfasserin aut Huang, L. verfasserin aut Foitzik, A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 409-414 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:409-414 https://dx.doi.org/10.1557/PROC-209-409 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 409-414 |
| allfieldsSound |
10.1557/PROC-209-409 doi (DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e DE-627 ger DE-627 rakwb eng 670 ASE Möller, H. J. verfasserin aut The Precipitation of Nickel and Copper at Grain Boundaries in Silicon 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. Jendrich, U. verfasserin aut Huang, L. verfasserin aut Foitzik, A. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 409-414 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:409-414 https://dx.doi.org/10.1557/PROC-209-409 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 409-414 |
| language |
English |
| source |
Enthalten in MRS online proceedings library 209(1990), 1 vom: 15. Okt., Seite 409-414 volume:209 year:1990 number:1 day:15 month:10 pages:409-414 |
| sourceStr |
Enthalten in MRS online proceedings library 209(1990), 1 vom: 15. Okt., Seite 409-414 volume:209 year:1990 number:1 day:15 month:10 pages:409-414 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
MRS online proceedings library |
| authorswithroles_txt_mv |
Möller, H. J. @@aut@@ Jendrich, U. @@aut@@ Huang, L. @@aut@@ Foitzik, A. @@aut@@ |
| publishDateDaySort_date |
1990-10-15T00:00:00Z |
| hierarchy_top_id |
57782046X |
| dewey-sort |
3670 |
| id |
SPR042725461 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042725461</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051708.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210118s1990 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-209-409</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042725461</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-209-409-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-209-409-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Möller, H. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The Precipitation of Nickel and Copper at Grain Boundaries in Silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1990</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jendrich, U.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Foitzik, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">209(1990), 1 vom: 15. Okt., Seite 409-414</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:209</subfield><subfield code="g">year:1990</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:409-414</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-209-409</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">209</subfield><subfield code="j">1990</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">10</subfield><subfield code="h">409-414</subfield></datafield></record></collection>
|
| author |
Möller, H. J. |
| spellingShingle |
Möller, H. J. ddc 670 The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| authorStr |
Möller, H. J. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)57782046X |
| format |
electronic Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
springer |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1946-4274 |
| topic_title |
670 ASE The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| topic |
ddc 670 |
| topic_unstemmed |
ddc 670 |
| topic_browse |
ddc 670 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
MRS online proceedings library |
| hierarchy_parent_id |
57782046X |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
MRS online proceedings library |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)57782046X (DE-600)2451008-7 |
| title |
The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| ctrlnum |
(DE-627)SPR042725461 (DE-599)SPRPROC-209-409-e (SPR)PROC-209-409-e |
| title_full |
The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| author_sort |
Möller, H. J. |
| journal |
MRS online proceedings library |
| journalStr |
MRS online proceedings library |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1990 |
| contenttype_str_mv |
txt |
| container_start_page |
409 |
| author_browse |
Möller, H. J. Jendrich, U. Huang, L. Foitzik, A. |
| container_volume |
209 |
| class |
670 ASE |
| format_se |
Elektronische Aufsätze |
| author-letter |
Möller, H. J. |
| doi_str_mv |
10.1557/PROC-209-409 |
| dewey-full |
670 |
| author2-role |
verfasserin |
| title_sort |
precipitation of nickel and copper at grain boundaries in silicon |
| title_auth |
The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| abstract |
Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. |
| abstractGer |
Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. |
| abstract_unstemmed |
Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 |
| container_issue |
1 |
| title_short |
The Precipitation of Nickel and Copper at Grain Boundaries in Silicon |
| url |
https://dx.doi.org/10.1557/PROC-209-409 |
| remote_bool |
true |
| author2 |
Jendrich, U. Huang, L. Foitzik, A. |
| author2Str |
Jendrich, U. Huang, L. Foitzik, A. |
| ppnlink |
57782046X |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1557/PROC-209-409 |
| up_date |
2024-07-03T14:29:37.884Z |
| _version_ |
1803568522601693185 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042725461</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051708.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210118s1990 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-209-409</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042725461</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-209-409-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-209-409-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Möller, H. J.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The Precipitation of Nickel and Copper at Grain Boundaries in Silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1990</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The precipitation of copper and nickel at grain boundaries in cast polycrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 - 1000 °C and the precipitation after cooling is studied by TEM. Copper precipitates in form of colonies containing hundreds of particles with a size between 5 - 6 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. Nickel forms only few large (micrometer size) plate-like or three dimensional precipitates at and near grain boundaries. The main features of the results and the differences between the two elements are explained under the assumption that the precipitation requires the transport of native point defects.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jendrich, U.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Foitzik, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">209(1990), 1 vom: 15. Okt., Seite 409-414</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:209</subfield><subfield code="g">year:1990</subfield><subfield code="g">number:1</subfield><subfield code="g">day:15</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:409-414</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-209-409</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">209</subfield><subfield code="j">1990</subfield><subfield code="e">1</subfield><subfield code="b">15</subfield><subfield code="c">10</subfield><subfield code="h">409-414</subfield></datafield></record></collection>
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