Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy
Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron m...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Foecke, T. [verfasserIn] King, R. [verfasserIn] Dale, A. [verfasserIn] Gerberich, W. W. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1990 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 209(1990), 1 vom: 15. Okt., Seite 617-622 |
|---|---|
| Übergeordnetes Werk: |
volume:209 ; year:1990 ; number:1 ; day:15 ; month:10 ; pages:617-622 |
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| DOI / URN: |
10.1557/PROC-209-617 |
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| 520 | |a Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. | ||
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10.1557/PROC-209-617 doi (DE-627)SPR042725801 (DE-599)SPRPROC-209-617-e (SPR)PROC-209-617-e DE-627 ger DE-627 rakwb eng 670 ASE Foecke, T. verfasserin aut Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. King, R. verfasserin aut Dale, A. verfasserin aut Gerberich, W. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 617-622 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:617-622 https://dx.doi.org/10.1557/PROC-209-617 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 617-622 |
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10.1557/PROC-209-617 doi (DE-627)SPR042725801 (DE-599)SPRPROC-209-617-e (SPR)PROC-209-617-e DE-627 ger DE-627 rakwb eng 670 ASE Foecke, T. verfasserin aut Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. King, R. verfasserin aut Dale, A. verfasserin aut Gerberich, W. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 617-622 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:617-622 https://dx.doi.org/10.1557/PROC-209-617 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 617-622 |
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10.1557/PROC-209-617 doi (DE-627)SPR042725801 (DE-599)SPRPROC-209-617-e (SPR)PROC-209-617-e DE-627 ger DE-627 rakwb eng 670 ASE Foecke, T. verfasserin aut Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. King, R. verfasserin aut Dale, A. verfasserin aut Gerberich, W. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 617-622 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:617-622 https://dx.doi.org/10.1557/PROC-209-617 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 617-622 |
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10.1557/PROC-209-617 doi (DE-627)SPR042725801 (DE-599)SPRPROC-209-617-e (SPR)PROC-209-617-e DE-627 ger DE-627 rakwb eng 670 ASE Foecke, T. verfasserin aut Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. King, R. verfasserin aut Dale, A. verfasserin aut Gerberich, W. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 617-622 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:617-622 https://dx.doi.org/10.1557/PROC-209-617 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 617-622 |
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10.1557/PROC-209-617 doi (DE-627)SPR042725801 (DE-599)SPRPROC-209-617-e (SPR)PROC-209-617-e DE-627 ger DE-627 rakwb eng 670 ASE Foecke, T. verfasserin aut Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy 1990 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. King, R. verfasserin aut Dale, A. verfasserin aut Gerberich, W. W. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 209(1990), 1 vom: 15. Okt., Seite 617-622 (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:209 year:1990 number:1 day:15 month:10 pages:617-622 https://dx.doi.org/10.1557/PROC-209-617 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 209 1990 1 15 10 617-622 |
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Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. |
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Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. |
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Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR042725801</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112051708.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210118s1990 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-209-617</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR042725801</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-209-617-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-209-617-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Foecke, T.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Imaging of Cracks in Semiconductor Surfaces Using Scanning Tunneling Microscopy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1990</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Scanning Tunneling Microscopy (STM) has developed into a useful tool for atomic-scale characterization of material surfaces. It is proving especially useful in the field of fracture, as the vast majority of high-resolution images of fracture processes are made in the transmission electron microscope, where thin film effects and sample preparation may greatly modify crack tip stresses and dislocation structures. This investigation involved imaging of cracks introduced in Si at room temperature and single crystals of galena (PbS) by rapid indentation at 77K. Images were obtained at the arrested cracktip, around the indentation, and along the flanks of the crack in the dynamic growth region. Measurements were made of both crack-tip morphology and upsets observed along the flanks of the cracks in PbS. Interesting results concerning crack tip geometry in Si, the effect of STM tip geometry and scan conditions on the resulting image of the cleavage crack, as well as work in progress on other material systems, will be discussed.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">King, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dale, A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerberich, W. W.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">209(1990), 1 vom: 15. 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