Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates
Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better u...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nanda, Arun K. [verfasserIn] Merchant, Sailesh M. [verfasserIn] Roy, Pradip K. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1995 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 382(1995), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:382 ; year:1995 ; number:1 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-382-401 |
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| 520 | |a Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. | ||
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10.1557/PROC-382-401 doi (DE-627)SPR04274475X (DE-599)SPRPROC-382-401-e (SPR)PROC-382-401-e DE-627 ger DE-627 rakwb eng 670 ASE Nanda, Arun K. verfasserin aut Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. Merchant, Sailesh M. verfasserin aut Roy, Pradip K. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 382(1995), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:382 year:1995 number:1 month:12 https://dx.doi.org/10.1557/PROC-382-401 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 382 1995 1 12 |
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10.1557/PROC-382-401 doi (DE-627)SPR04274475X (DE-599)SPRPROC-382-401-e (SPR)PROC-382-401-e DE-627 ger DE-627 rakwb eng 670 ASE Nanda, Arun K. verfasserin aut Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. Merchant, Sailesh M. verfasserin aut Roy, Pradip K. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 382(1995), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:382 year:1995 number:1 month:12 https://dx.doi.org/10.1557/PROC-382-401 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 382 1995 1 12 |
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10.1557/PROC-382-401 doi (DE-627)SPR04274475X (DE-599)SPRPROC-382-401-e (SPR)PROC-382-401-e DE-627 ger DE-627 rakwb eng 670 ASE Nanda, Arun K. verfasserin aut Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. Merchant, Sailesh M. verfasserin aut Roy, Pradip K. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 382(1995), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:382 year:1995 number:1 month:12 https://dx.doi.org/10.1557/PROC-382-401 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 382 1995 1 12 |
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10.1557/PROC-382-401 doi (DE-627)SPR04274475X (DE-599)SPRPROC-382-401-e (SPR)PROC-382-401-e DE-627 ger DE-627 rakwb eng 670 ASE Nanda, Arun K. verfasserin aut Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. Merchant, Sailesh M. verfasserin aut Roy, Pradip K. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 382(1995), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:382 year:1995 number:1 month:12 https://dx.doi.org/10.1557/PROC-382-401 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 382 1995 1 12 |
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10.1557/PROC-382-401 doi (DE-627)SPR04274475X (DE-599)SPRPROC-382-401-e (SPR)PROC-382-401-e DE-627 ger DE-627 rakwb eng 670 ASE Nanda, Arun K. verfasserin aut Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. Merchant, Sailesh M. verfasserin aut Roy, Pradip K. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 382(1995), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:382 year:1995 number:1 month:12 https://dx.doi.org/10.1557/PROC-382-401 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 382 1995 1 12 |
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Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. |
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Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. |
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Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR04274475X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220112052237.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210119s1995 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1557/PROC-382-401</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR04274475X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)SPRPROC-382-401-e</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)PROC-382-401-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nanda, Arun K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1995</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with $ SiH_{4} $ and $ H_{2} $ reduction chemistries are presented. In particular, the reaction between $ WF_{6} $ (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after $ SiH_{4} $ passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Merchant, Sailesh M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Roy, Pradip K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">MRS online proceedings library</subfield><subfield code="d">Warrendale, Pa. : MRS, 1998</subfield><subfield code="g">382(1995), 1 vom: Dez.</subfield><subfield code="w">(DE-627)57782046X</subfield><subfield code="w">(DE-600)2451008-7</subfield><subfield code="x">1946-4274</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:382</subfield><subfield code="g">year:1995</subfield><subfield code="g">number:1</subfield><subfield code="g">month:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1557/PROC-382-401</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">382</subfield><subfield code="j">1995</subfield><subfield code="e">1</subfield><subfield code="c">12</subfield></datafield></record></collection>
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