Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications
Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Oakes, D. B. [verfasserIn] Gelb, A. [verfasserIn] Green, B. D. [verfasserIn] Pirri, A. N. [verfasserIn] Wolfson, R. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1995 |
|---|
| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 396(1995), 1 vom: 01. Aug. |
|---|---|
| Übergeordnetes Werk: |
volume:396 ; year:1995 ; number:1 ; day:01 ; month:08 |
| Links: |
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| DOI / URN: |
10.1557/PROC-396-721 |
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SPR042765153 |
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| 520 | |a Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. | ||
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10.1557/PROC-396-721 doi (DE-627)SPR042765153 (DE-599)SPRPROC-396-721-e (SPR)PROC-396-721-e DE-627 ger DE-627 rakwb eng 670 ASE Oakes, D. B. verfasserin aut Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. Gelb, A. verfasserin aut Green, B. D. verfasserin aut Pirri, A. N. verfasserin aut Wolfson, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 396(1995), 1 vom: 01. Aug. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:396 year:1995 number:1 day:01 month:08 https://dx.doi.org/10.1557/PROC-396-721 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 396 1995 1 01 08 |
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10.1557/PROC-396-721 doi (DE-627)SPR042765153 (DE-599)SPRPROC-396-721-e (SPR)PROC-396-721-e DE-627 ger DE-627 rakwb eng 670 ASE Oakes, D. B. verfasserin aut Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. Gelb, A. verfasserin aut Green, B. D. verfasserin aut Pirri, A. N. verfasserin aut Wolfson, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 396(1995), 1 vom: 01. Aug. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:396 year:1995 number:1 day:01 month:08 https://dx.doi.org/10.1557/PROC-396-721 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 396 1995 1 01 08 |
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10.1557/PROC-396-721 doi (DE-627)SPR042765153 (DE-599)SPRPROC-396-721-e (SPR)PROC-396-721-e DE-627 ger DE-627 rakwb eng 670 ASE Oakes, D. B. verfasserin aut Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. Gelb, A. verfasserin aut Green, B. D. verfasserin aut Pirri, A. N. verfasserin aut Wolfson, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 396(1995), 1 vom: 01. Aug. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:396 year:1995 number:1 day:01 month:08 https://dx.doi.org/10.1557/PROC-396-721 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 396 1995 1 01 08 |
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10.1557/PROC-396-721 doi (DE-627)SPR042765153 (DE-599)SPRPROC-396-721-e (SPR)PROC-396-721-e DE-627 ger DE-627 rakwb eng 670 ASE Oakes, D. B. verfasserin aut Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. Gelb, A. verfasserin aut Green, B. D. verfasserin aut Pirri, A. N. verfasserin aut Wolfson, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 396(1995), 1 vom: 01. Aug. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:396 year:1995 number:1 day:01 month:08 https://dx.doi.org/10.1557/PROC-396-721 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 396 1995 1 01 08 |
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10.1557/PROC-396-721 doi (DE-627)SPR042765153 (DE-599)SPRPROC-396-721-e (SPR)PROC-396-721-e DE-627 ger DE-627 rakwb eng 670 ASE Oakes, D. B. verfasserin aut Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. Gelb, A. verfasserin aut Green, B. D. verfasserin aut Pirri, A. N. verfasserin aut Wolfson, R. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 396(1995), 1 vom: 01. Aug. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:396 year:1995 number:1 day:01 month:08 https://dx.doi.org/10.1557/PROC-396-721 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 396 1995 1 01 08 |
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Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. |
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Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. |
| abstract_unstemmed |
Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). A technique for hyper-thinning silicon and silicon dioxide films to these dimensions is described. The method is based upon etching by a high flux beam of hyperthermal (2 to 14 eV translational energy) fluorine atoms generated using Physical Sciences’ FAST technology. The fluorine atom beam contains greater than 95% atoms and less than 0.1% ions. The low ion content of the beam allows damage-free processing of these films. At the available translational energies, the fluorine atom reaction probability with silicon is near unity. Hence, high rate etching can be achieved. Silicon films have been thinned at ambient temperature (20 C) to thicknesses less than 50 nm by this technique with etching rates up to 120 nm/min demonstrated. The hyperthinning is uniform and does not affect the surface finish. Analysis of the processed surface shows no evidence of contamination from the treatment. High rate etching of silicon dioxide films has also been shown. The reaction probability of hyperthermal fluorine atoms with $ SiO_{2} $ films is 0.25. |
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Gelb, A. Green, B. D. Pirri, A. N. Wolfson, R. |
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10.1557/PROC-396-721 |
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2024-07-03T14:42:47.911Z |
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B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hyperthinning of Silicon and $ Sio_{2} $ for Low Power Electronic Applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1995</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Silicon-On-Insulator (SOI) and advanced device technologies require the ability to fabricate uniform thin films of silicon (< 50 nm) and silicon dioxide (< 5 nm). 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