Deformation-Induced Dislocations in 4H-SiC and GaN
Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hong, M. H. [verfasserIn] Samant, A. V. [verfasserIn] Orlov, V. [verfasserIn] Farber, B. [verfasserIn] Kisielowski, C. [verfasserIn] Pirouz, P. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1999 |
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| Übergeordnetes Werk: |
Enthalten in: MRS online proceedings library - Warrendale, Pa. : MRS, 1998, 572(1999), 1 vom: Dez. |
|---|---|
| Übergeordnetes Werk: |
volume:572 ; year:1999 ; number:1 ; month:12 |
| Links: |
|---|
| DOI / URN: |
10.1557/PROC-572-369 |
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SPR042766915 |
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| 520 | |a Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. | ||
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10.1557/PROC-572-369 doi (DE-627)SPR042766915 (DE-599)SPRPROC-572-369-e (SPR)PROC-572-369-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. H. verfasserin aut Deformation-Induced Dislocations in 4H-SiC and GaN 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. Samant, A. V. verfasserin aut Orlov, V. verfasserin aut Farber, B. verfasserin aut Kisielowski, C. verfasserin aut Pirouz, P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 572(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:572 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-572-369 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 572 1999 1 12 |
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10.1557/PROC-572-369 doi (DE-627)SPR042766915 (DE-599)SPRPROC-572-369-e (SPR)PROC-572-369-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. H. verfasserin aut Deformation-Induced Dislocations in 4H-SiC and GaN 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. Samant, A. V. verfasserin aut Orlov, V. verfasserin aut Farber, B. verfasserin aut Kisielowski, C. verfasserin aut Pirouz, P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 572(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:572 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-572-369 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 572 1999 1 12 |
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10.1557/PROC-572-369 doi (DE-627)SPR042766915 (DE-599)SPRPROC-572-369-e (SPR)PROC-572-369-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. H. verfasserin aut Deformation-Induced Dislocations in 4H-SiC and GaN 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. Samant, A. V. verfasserin aut Orlov, V. verfasserin aut Farber, B. verfasserin aut Kisielowski, C. verfasserin aut Pirouz, P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 572(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:572 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-572-369 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 572 1999 1 12 |
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10.1557/PROC-572-369 doi (DE-627)SPR042766915 (DE-599)SPRPROC-572-369-e (SPR)PROC-572-369-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. H. verfasserin aut Deformation-Induced Dislocations in 4H-SiC and GaN 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. Samant, A. V. verfasserin aut Orlov, V. verfasserin aut Farber, B. verfasserin aut Kisielowski, C. verfasserin aut Pirouz, P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 572(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:572 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-572-369 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 572 1999 1 12 |
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10.1557/PROC-572-369 doi (DE-627)SPR042766915 (DE-599)SPRPROC-572-369-e (SPR)PROC-572-369-e DE-627 ger DE-627 rakwb eng 670 ASE Hong, M. H. verfasserin aut Deformation-Induced Dislocations in 4H-SiC and GaN 1999 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. Samant, A. V. verfasserin aut Orlov, V. verfasserin aut Farber, B. verfasserin aut Kisielowski, C. verfasserin aut Pirouz, P. verfasserin aut Enthalten in MRS online proceedings library Warrendale, Pa. : MRS, 1998 572(1999), 1 vom: Dez. (DE-627)57782046X (DE-600)2451008-7 1946-4274 nnns volume:572 year:1999 number:1 month:12 https://dx.doi.org/10.1557/PROC-572-369 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_2005 AR 572 1999 1 12 |
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| title_sort |
deformation-induced dislocations in 4h-sic and gan |
| title_auth |
Deformation-Induced Dislocations in 4H-SiC and GaN |
| abstract |
Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. |
| abstractGer |
Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. |
| abstract_unstemmed |
Abstract Bulk single crystals of 4H-SiC have been deformed in compression in the temperature range 550-1300°C, whereas a GaN thin film grown on a (0001) sapphire substrate was deformed by Vickers indentation in the temperature range 25-800°C. The TEM observations of the deformed crystals indicate that deformation-induced dislocations in 4H-SiC all lie on the (0001) basal plane but depending on the deformation temperature, are one of two types. The dislocations induced by deformation at temperatures above ~1 100°C are complete, with a Burgers vector, b, of 1/3❬112̄0❭ but are all dissociated into two 1/3❬101̄0❭ partials bounding a ribbon of stacking fault. On the other 3 hand, the dislocations induced by deformation in the temperature range 550<T<~ 1100°C were predominantly single leading partials each dragging a stacking fault behind them. From the width of dissociated dislocations in the high-temperature deformed crystals, the stacking fault energy of 4H-SiC has been estimated to be 14.7±2.5mJ/m2. Vickers indentations of the [0001]-oriented GaN film produced a dense array of dislocations along the three <112̄0> directions at all temperatures. The dislocations were slightly curved with their curvature increasing as the deformation temperature increased. Most of these dislocations were found to have a screw nature with their b parallel to <112̄0>. Also, within the resolution of the weak-beam method, they were not found to be dissociated. Tilting experiment show that these dislocations lie on the {11̄00} prism plane rather than the easier (0001) glide plane. |
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| title_short |
Deformation-Induced Dislocations in 4H-SiC and GaN |
| url |
https://dx.doi.org/10.1557/PROC-572-369 |
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| author2 |
Samant, A. V. Orlov, V. Farber, B. Kisielowski, C. Pirouz, P. |
| author2Str |
Samant, A. V. Orlov, V. Farber, B. Kisielowski, C. Pirouz, P. |
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| up_date |
2024-07-03T14:43:14.030Z |
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